EPA240 Search Results

EPA240D

Contextual Info: Excelics EPA240D DATA SHEET High Efficiency Heterojunction Power FET • • • • • • 410 +33dBm TYPICAL OUTPUT POWER 20.0 dB TYPICAL POWER GAIN AT 2GHz 0.4 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION

EPA240D-SOT89

Abstract: EPA240D EPA240
Contextual Info: Excelics EPA240D-SOT89 DATA SHEET DC-6GHz High Efficiency Heterojunction Power FET Features    '5$,1 6285&      (Top View All Dimensions In Mils Applications • • •  $ &# *$7( • • • LOW COST SURFACE-MOUNT PLASTIC PACKAGE

EPA240BV

Abstract: EPA240B
Contextual Info: EPA240B/EPA240BV High Efficiency Heterojunction Power FET FEATURES • • • • • • 960 50 +32.5dBm TYPICAL OUTPUT POWER 8.0dB TYPICAL POWER GAIN FOR EPA240B AND 9.5dB FOR EPA240BV AT 18GHz 0.3 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION

100MIL

Abstract: EPA240D-100P AuSn eutectic
Contextual Info: EPA240D-100P High Efficiency Heterojunction Power FET UPDATED 11/14/2005 • • • • • • NON-HERMETIC 100MIL METAL FLANGE PACKAGE +33 dBm TYPICAL OUTPUT POWER 20 dB TYPICAL POWER GAIN AT 2GHz 0.4 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION

EPA240D

Contextual Info: EPA240D High Efficiency Heterojunction Power FET FEATURES 410 • • • • • • 104 +33dBm TYPICAL OUTPUT POWER 20.0 dB TYPICAL POWER GAIN AT 2GHz 0.4 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY,

48A-24-500

Abstract: E140898
Contextual Info: Part No: EPA240050-S/T-SZ Date: 5/11/2007 Unit: mm Description: linear power supply Page No: 1 of 7 Specifications Output voltage Rated input voltage Primary rated voltage Primary exciting current Secondary rated voltage & current Temperature rise of primary winding full load

GM 90 562 573

Abstract: EPA240B-100F
Contextual Info: Excelics EPA240B-100F DATA SHEET High Efficiency Heterojunction Power FET '  7<3 ELECTRICAL CHARACTERISTICS Ta = 25 OC SYMBOLS P1dB G1dB PAE • PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=8GHz Vds=8V, Ids=50% Idss f=12GHz Gain at 1dB Compression

AuSn eutectic

Abstract: EPA240B100P 100MIL EPA240B-100P
Contextual Info: EPA240B-100P High Efficiency Heterojunction Power FET UPDATED 02/15/2005 • • • • • • NON-HERMETIC 100MIL METAL FLANGE PACKAGE +32.5dBm TYPICAL OUTPUT POWER 10.5dB TYPICAL POWER GAIN AT 12GHz 0.3 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION

EPA240BV

Abstract: EPA240B
Contextual Info: Excelics EPA240B/EPA240BV DATA SHEET High Efficiency Heterojunction Power FET 960 • • • • • • • +32.5dBm TYPICAL OUTPUT POWER 8.0dB TYPICAL POWER GAIN FOR EPA240B AND 9.5dB FOR EPA240BV AT 18GHz 0.3 X 2400 MICRON RECESSED “MUSHROOM” GATE

igd 001

Abstract: EPA240D-CP083
Contextual Info: EPA240D-CP083 High Efficiency Heterojunction Power FET UPDATED 07/19/2006 • • • • • • .096 .290±0.005 FEATURES NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE +32.5 dBm OUTPUT POWER AT 1dB COMPRESSION 18.5 dB GAIN AT 2 GHz 0.5x2400 MICRON RECESSED “MUSHROOM” GATE

Filtronic

Abstract: EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500
Contextual Info: FILTRONIC COMPOUND SEMICONDUCTORS PRODUCT CROSS-REFERENCE GUIDE DISCRETE UNPACKAGED DEVICES Note 1: Filtronic P/N Excelics FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B EPA120E EPA120A EPA080A EPA030C EPA018A EPA018A MwT MwT-PH15

Contextual Info: rev. PART NUMBER: EPA240050-P5-SZ page 1 of 7 date 10/2008 DESCRIPTION: linear adapter SPECIFICATIONS output voltage rated input voltage primary rated voltage primary exciting current secondary rated voltage & current temperature rise of primary winding insulation resistance

48A-24-500

Abstract: power supply circuit diagram E140898 AC DC power supply circuit diagram
Contextual Info: rev. PART NUMBER: EPA240050-P5R-SZ page 1 of 7 date 04/2008 DESCRIPTION: linear power supply RoHS SPECIFICATIONS output voltage rated input voltage primary rated voltage primary exciting current secondary rated voltage & current temperature rise of primary winding

EPA080A-100P

Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
Contextual Info: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

b1415

Abstract: GAAS FET CROSS REFERENCE gaas fet 70 mil micro-X Package power fet 70 mil micro-X Package EPA240BV N5 micro-X Package EPA060B-70 MIXER EMA 0.5w ,GaAs FET EPA480C-SOT89
Contextual Info: RTC/5/01/PSINTRO EXCELICS SEMICONDUCTOR, INC. PRODUCT SELECTION GUIDE Products Excelics Semiconductor, Inc. was founded in 1995 to become a world wide leading merchant supplier of high performance R.F. and microwave semiconductor discrete devices and integrated circuits ICs

Curtice

Abstract: EFA018A EPA030A EPA480C EPA060B EFA040A EFA025A EPA025 220E-12 Excelics EPA018A
Contextual Info: Large Signal Model Parameters for Curtice-Cubic Model For Low Distortion GaAs Power FETs Curtice-Ettenburg Model Parameter BETA GAMMA VOUT0 VT0 A0 A1 A2 A3 TAU R1 R2 VB0 VBI RF IS N RDS CRF RD RG RS RIN CGSO CGDO FC CDS CGS CGD KF4 AF TNOM XTI EG VTOTC BETATCE

EPA018A

Abstract: EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C
Contextual Info: EXCELICS SEMICONDUCTOR, INC. Small Signal Equivalent Circuit Model The small signal model shown below can be useful for extrapolating and interpolating the S-parameters as well as for use in circuit simulators that cannot handle S-parameters directly. The element values are derived by fitting the

230vac 12vdc transformer

Abstract: transformer 230vac T314-P6P-ND T935 T1007-ND T1008-ND T967-P5P-ND T935-P5P-ND T601-ND ul498
Contextual Info: NEW! Switching and Linear Power Supply Fig. 1 — USB A Fig. 2 — US/Canada Transformer SPECIFICATIONS: • Input Voltage Range: 90V ~ 264VAC • Frequency Range: 47Hz ~ 63Hz • Operating Temperature: 0°C ~ 40°C • Safety Requirements/EMI Standards: Please see data sheet

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

T379-P5P-ND

Abstract: T948 EMT 248 T954-P5P-ND T946-P5P-ND T1017-P5R-ND EMS120150-P5P-SZ T948-P5P-ND T959-P5P-ND T314-P6P-ND
Contextual Info: Wall and Desktop Transformers EISA COMPLIANT The Energy Independence and Security Act EISA OF 2007 mandates that external power supplies sold in the U.S. meet both a minimum efficiency percentage based on rated output wattage, and a maximum power output of 0.5W in a no-load condition. Becoming