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    EPA040A Search Results

    EPA040A Datasheets (3)

    Excelics Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    EPA040A
    		Excelics Semiconductor 8-12V high efficiency heterojunction power FET Original PDF 30.54KB 2
    EPA040A-70
    		Excelics Semiconductor 6-10V high efficiency heterojunction power FET Original PDF 19.03KB 2
    EPA040AV
    		Excelics Semiconductor High Efficiency Heterojunction Power FET Original PDF 47.81KB 2
    SF Impression Pixel

    EPA040A Price and Stock

    Excelics Semiconductor

    Excelics Semiconductor EPA040A

    Trans RF MOSFET 8V 0.135A 3-Pin Chip
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics EPA040A 1
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    EPA040A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    EPA040A

    Contextual Info: Excelics EPA040A DATA SHEET High Efficiency Heterojunction Power FET • • • • • • +24.5dBm TYPICAL OUTPUT POWER 11.0dB TYPICAL POWER GAIN AT 18GHz 0.3 X 400 MICRON RECESSED “ MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION


    Original     		epa040a18ghz12ghz PDF

    EPA040A-70

    Abstract: igd 515 Excelics 70mil PACKAGE
    Contextual Info: EPA040A-70 High Efficiency Heterojunction Power FET UPDATED 11/22/2004 FEATURES • • • • • • NON-HERMETIC LOW COST CERAMIC 70MIL PACKAGE +25.5 dBm OUTPUT POWER AT 1dB COMPRESSION 7.0 dB POWER GAIN AT 12GHz 0.3 x 800 MICRON RECESSED “MUSHROOM” GATE


    Original     		epa040a-7070mil12ghz18ghz+2igd 515excelics 70mil package PDF

    EPA040A-70

    Contextual Info: Excelics EPA040A-70 DATA SHEET High Efficiency Heterojunction Power FET 44 19 4 20 S S 70 D 40 NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +23.5dBm TYPICAL OUTPUT POWER 7.0dB TYPICAL POWER GAIN AT 18GHz 0.3 X 400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


    Original     		epa040a-7070mil18ghz12ghz+1com52 PDF

    EPA040A

    Abstract: EPA040AV
    Contextual Info: EPA040A/ EPA040AV High Efficiency Heterojunction Power FET FEATURES • • • • • • • +24.5dBm TYPICAL OUTPUT POWER 11.0dB TYPICAL POWER GAIN FOR EPA040A AND 12.0dB FOR EPA040AV AT 18GHz 0.3 X 400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


    Original     		epa040a/epa040avepa040a18ghz PDF

    EPA040A

    Abstract: EPA040AV
    Contextual Info: Excelics EPA040A/EPA040AV DATA SHEET High Efficiency Heterojunction Power FET • • • • • • • +24.5dBm TYPICAL OUTPUT POWER 11.0dB TYPICAL POWER GAIN FOR EPA040A AND 12.0dB FOR EPA040AV AT 18GHz 0.3 X 400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


    Original     		epa040a/epa040avepa040aepa040av18ghz+112ghz PDF

    s-parameter s11 s12 s21

    Abstract: EPA040A S21-Magnitude GHz-210 Bias "One Year Repeatability"
    Contextual Info: EXCELICS SEMICONDUCTOR, INC. S-Parameter Uniformity Data was measured on EPA040A devices, from 1 to 26GHz. Devices were assembled in a microstrip test fixture. S-parameters include bond wires. Devices were biased at 8V, half Idss. Consequently this data includes not only variations in device characteristics, but also variations


    Original     		epa040a26ghzs-parameter s11 s12 s21s21-magnitude+2ghz-210bias "one year repeatability PDF

    EPA080A-100P

    Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
    Contextual Info: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.


    Original     		epa080a-100pepa060b-70epa240bvepa018a+6eic7179-4microwave gaas fet catalogueemp108-p1epa160avepa120evepa480c PDF

    Curtice

    Abstract: EFA018A EPA030A EPA480C EPA060B EFA040A EFA025A EPA025 220E-12 Excelics EPA018A
    Contextual Info: Large Signal Model Parameters for Curtice-Cubic Model For Low Distortion GaAs Power FETs Curtice-Ettenburg Model Parameter BETA GAMMA VOUT0 VT0 A0 A1 A2 A3 TAU R1 R2 VB0 VBI RF IS N RDS CRF RD RG RS RIN CGSO CGDO FC CDS CGS CGD KF4 AF TNOM XTI EG VTOTC BETATCE


    Original     		efa018a00e-1240e-1400e-08+1263e-1380e-1400e-14efa025acurticeepa030aepa480cepa060befa040aepa025220e-12excelics epa018a PDF

    EPA018A

    Abstract: EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C
    Contextual Info: EXCELICS SEMICONDUCTOR, INC. Small Signal Equivalent Circuit Model The small signal model shown below can be useful for extrapolating and interpolating the S-parameters as well as for use in circuit simulators that cannot handle S-parameters directly. The element values are derived by fitting the


    Original     		epa018aepa025aepa030cepa040a+11epa060aefa480befa480cefa720aefa960befa1200aepa060befa018aexcelics epa018aepa480cepa240d PDF

    EPA025A70

    Abstract: EPA060B-70 EFA018A EPA060B EPA025 EPA025A EPB018A5 EPA018A EPA080A-70 EPA080A
    Contextual Info: EXCELICS SEMICONDUCTOR, INC. RTC/10/01/98 Typical Noise Figure/Associated Gain For Excelics FETs Device Type Bias Condition Frequency N.F. Typical Ga (Typical) A.) Power FETs EPA080A 6V/25% Idss 12GHz 1.20dB 9.5dB EPA060B 6V/25% Idss 12GHz 1.15dB 10.0dB


    Original     		rtc/10/01/98epa080a12ghzepa060b+11epa040aepa025av/15mav/10maepa025a70epa060b-70efa018aepa025epb018a5epa018aepa080a-70 PDF