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EPA080A Datasheets (4)

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Excelics Semiconductor

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
EPA080A		Excelics Semiconductor	8-12V high efficiency heterojunction power FET	Original	PDF	29.69KB	2
EPA080A-100F		Excelics Semiconductor	8-12V high efficiency heterojunction power FET	Original	PDF	26.42KB	2
EPA080A-70		Excelics Semiconductor	5-8V high efficiency heterojunction power FET	Original	PDF	18.97KB	2
EPA080AV		Excelics Semiconductor	High Efficiency Heterojunction Power FET	Original	PDF	53.83KB	2

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EPA080A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
EPA080A Contextual Info: Excelics EPA080A DATA SHEET High Efficiency Heterojunction Power FET • • • • • • 510 +27.5dBm TYPICAL OUTPUT POWER 9.5dB TYPICAL POWER GAIN AT 18GHz 0.3 X 800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION	Original	epa080a 18ghz 12ghz	PDF
EPA080A-70 Abstract: 744 773 047 Contextual Info: Excelics EPA080A-70 DATA SHEET High Efficiency Heterojunction Power FET 44 19 4 20 S S 70 D 40 NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +25.5dBm TYPICAL OUTPUT POWER 7.0dB TYPICAL POWER GAIN AT 12GHz 0.3 X 800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION	Original	epa080a-70 70mil 12ghz 744 773 047	PDF
EPA080A-100F Contextual Info: EPA080A-100F High Efficiency Heterojunction Power FET ISSUED 08/10/2005 .070 FEATURES • • • • • HERMETIC 100mil CERAMIC FLANGE PACKAGE +27.5dBm TYPICAL OUTPUT POWER 8.5dB TYPICAL POWER GAIN AT 12GHz Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION	Original	epa080a-100f 100mil 12ghz	PDF
EPA080A Abstract: THICKNESS-75 900-131 EPA080AV Contextual Info: Excelics EPA080A/EPA080AV DATA SHEET High Efficiency Heterojunction Power FET • • • • • • • +27.5dBm TYPICAL OUTPUT POWER 9.5dB TYPICAL POWER GAIN FOR EPA080A AND 10.5dB FOR EPA080AV AT 18GHz 0.3 X 800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION	Original	epa080a/epa080av epa080a epa080av 18ghz +312ghz thickness-75 900-131	PDF
EPA080A-100F Contextual Info: Excelics EPA080A-100F DATA SHEET High Efficiency Heterojunction Power FET ELECTRICAL CHARACTERISTICS Ta = 25 OC SYMBOLS 7<3 All Dimensions In mils TYP Output Power at 1dB Compression f=12GHz Vds=8V, Ids=50% Idss Gain at 1dB Compression f=12GHz Vds=8V, Ids=50% Idss	Original	epa080a-100f 12ghz	PDF
EPA025A70 Abstract: EPA060B-70 EFA018A EPA060B EPA025 EPA025A EPB018A5 EPA018A EPA080A-70 EPA080A Contextual Info: EXCELICS SEMICONDUCTOR, INC. RTC/10/01/98 Typical Noise Figure/Associated Gain For Excelics FETs Device Type Bias Condition Frequency N.F. Typical Ga (Typical) A.) Power FETs EPA080A 6V/25% Idss 12GHz 1.20dB 9.5dB EPA060B 6V/25% Idss 12GHz 1.15dB 10.0dB	Original	rtc/10/01/98 epa080a 12ghz epa060b +11epa040a epa025a v/15ma v/10ma epa025a70 epa060b-70 efa018a epa025 epb018a5 epa018a epa080a-70	PDF
900-131 Abstract: EPA080A EPA080AV Contextual Info: EPA080A/EPA080AV High Efficiency Heterojunction Power FET • • • • • +27.5dBm TYPICAL OUTPUT POWER 9.5dB TYPICAL POWER GAIN FOR EPA080A AND 10.5dB FOR EPA080AV AT 18GHz 0.3 X 800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE	Original	epa080a/epa080av epa080a epa080av 18ghz +212ghz 900-131	PDF
Filtronic Abstract: EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500 Contextual Info: FILTRONIC COMPOUND SEMICONDUCTORS PRODUCT CROSS-REFERENCE GUIDE DISCRETE UNPACKAGED DEVICES Note 1: Filtronic P/N Excelics FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B EPA120E EPA120A EPA080A EPA030C EPA018A EPA018A MwT MwT-PH15	Original	fpd3000 fpd2250 fpd1500 fpd1050 +11fpd750 fpd6836 fpd200 fpd7612 epa240b epa160b filtronic eudyna epa018a ph15 transistor flc087xp	PDF
EPA080A-100P Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C Contextual Info: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.	Original	epa080a-100p epa060b-70 epa240bv epa018a +6eic7179-4 microwave gaas fet catalogue emp108-p1 epa160av epa120ev epa480c	PDF
EFA018A Abstract: EPA025A EPA060B-70 EFA240D-SOT89 EPA018A EPA060B EPA018 EPB018A5 CP083 EFA025A-70 Contextual Info: 310 De Guigne Drive, Sunnyvale, CA 94085 Tel: 408-737-1711 Fax: 408-737-1868 Quick Reference Guide for 2 GHz Applications Device Type Bias A Discrete Devices: EPB018A5 EPB018A7 EPB018A9 EPB025A 2V/15mA 2V/15mA 2V/15mA 2V/15mA 15 15 15 15 0.4 0.5 0.6 0.5 20	Original	epb018a5 epb018a7 epb018a9 epb025a +11v/15ma efa018a efa025a epa025a epa060b-70 efa240d-sot89 epa018a epa060b epa018 cp083 efa025a-70	PDF
Curtice Abstract: EFA018A EPA030A EPA480C EPA060B EFA040A EFA025A EPA025 220E-12 Excelics EPA018A Contextual Info: Large Signal Model Parameters for Curtice-Cubic Model For Low Distortion GaAs Power FETs Curtice-Ettenburg Model Parameter BETA GAMMA VOUT0 VT0 A0 A1 A2 A3 TAU R1 R2 VB0 VBI RF IS N RDS CRF RD RG RS RIN CGSO CGDO FC CDS CGS CGD KF4 AF TNOM XTI EG VTOTC BETATCE	Original	efa018a 00e-12 40e-14 00e-08 +1263e-13 80e-14 00e-14 efa025a curtice epa030a epa480c epa060b efa040a epa025 220e-12 excelics epa018a	PDF
EPA018A Abstract: EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C Contextual Info: EXCELICS SEMICONDUCTOR, INC. Small Signal Equivalent Circuit Model The small signal model shown below can be useful for extrapolating and interpolating the S-parameters as well as for use in circuit simulators that cannot handle S-parameters directly. The element values are derived by fitting the	Original	epa018a epa025a epa030c epa040a +11epa060a efa480b efa480c efa720a efa960b efa1200a epa060b efa018a excelics epa018a epa480c epa240d	PDF
EMA302B Abstract: EPA080A EPA160A Contextual Info: Excelics EMA302B PRELIMINARY DATA SHEET 22-26 GHz Medium Power MMIC 85 165 50 165 Operating Frequency Range 1020 F PARAMETERS/TEST CONDITIONS 325 425 50 95 900 Chip Thickness: 75 ± 13 microns All Dimensions In Microns ELECTRICAL CHARACTERISTICS1 Ta = 25 OC	Original	ema302b epa080a epa160a	PDF