FPD1500 Search Results

FPD1500

Abstract: SSG 23 TRANSISTOR stu 407 BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 FPD1500DFN FPD750SOT89 InGaAs hemt biasing EB1500DFN-BE
Contextual Info: FPD1500DFN FPD1500DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT Package: 2mmx2mm DFN Product Description Features The FPD1500DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a

FPD1500SOT89

Contextual Info: FPD1500SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • PERFORMANCE 1850 MHz ♦ 27.5 dBm Output Power (P1dB) ♦ 17 dB Small-Signal Gain (SSG) ♦ 1.0 dB Noise Figure ♦ 42 dBm Output IP3 ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available

FPD1500SOT89

Abstract: TRANSISTOR BC 252 IGD 507 an CAPACITOR 33PF FPD1500SOT89E filtronic Solid State 33id
Contextual Info: FPD1500SOT89 Datasheet v2.4 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • RoHS 27.5 dBm Output Power (P1dB) 17 dB Small-Signal Gain (SSG) 1.2 dB Noise Figure 42 dBm Output IP3 50% Power-Added Efficiency FPD1500SOT89E - RoHS compliant

SSG 23 TRANSISTOR

Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 EB1500DFN-BA EB1500DFN-BB FPD1500DFN FPD750SOT89 MIL-HDBK-263 Filtronic Compound Semiconductors
Contextual Info: FPD1500DFN Datasheet v2.1 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • 27 dBm Output Power (P1dB) 18 dB Small-Signal Gain (SSG) 1.2 dB Noise Figure 42 dBm Output IP3 45% Power-Added Efficiency RoHS compliant (Directive 2002/95/EC)

FPD1500

Abstract: MIL-HDBK-263 PAD130
Contextual Info: FPD1500 1W POWER PHEMT Datasheet v2.1 FEATURES: • • • • • LAYOUT: 29 dBm Linear Output Power at 12 GHz 9 dB Power Gain at 12 GHz 12.5 dB Max Stable Gain at 12 GHz 41 dBm Output IP3 35% Power-Added Efficiency GENERAL DESCRIPTION: The FPD1500 is an

FPD1500

Abstract: MIL-HDBK-263 P100
Contextual Info: FPD1500 1W POWER PHEMT • • DRAIN BOND PAD 2X FEATURES ♦ 29 dBm Linear Output Power at 12 GHz ♦ 9 dB Power Gain at 12 GHz ♦ 12.5 dB Maximum Stable Gain at 12 GHz ♦ 41 dBm Output IP3 ♦ 35% Power-Added Efficiency SOURCE BOND PAD (2x) GATE BOND

FPD1500SOT89CESR

Abstract: FPD1500SOT89 FPD1500SOT89E MIL-HDBK-263
Contextual Info: FPD1500SOT89 FPD1500SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky

FPD1500SOT89E

Abstract: est 0114 FPD1500SOT89 MIL-HDBK-263
Contextual Info: FPD1500SOT89E FPD1500SOT8 9E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89E is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm

FPD1500SOT89

Contextual Info: Balanced EBD1500SOT89-AG FPD1500SOT89 2.5 - 2.6GHz LNA EVALUATION BOARD FEATURES Frequency GHz P1dB (dBm) SSG (dB) N.F. (dB) OIP3 (dBm) Bias 2.5 2.6 30.5 30.2 14.8 14.5 0.95 0.95 43.5 43.5 5V, 150mA DESCRIPTION AND APPLICATIONS The data given above is based on measurements taken on the evaluation board described

FPD1500

Abstract: FPD1500SOT89 FPD1500SOT89E MIL-HDBK-263 TL11 TL12 TL13 transistor w10 18 transistor w10 Transistor W35
Contextual Info: FPD1500SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT • PERFORMANCE 1850 MHz ♦ 27.5 dBm Output Power (P1dB) ♦ 17 dB Small-Signal Gain (SSG) ♦ 1.2 dB Noise Figure ♦ 42 dBm Output IP3 ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available

FPD1500SOT89CE

Abstract: 4506 gh Transistor BJT 547 b fpd1500sot89cesr 1850G
Contextual Info: FPD1500SOT89CE FPD1500SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25mx1500m

Transistor AC 51 0865 75 834

Contextual Info: FPD1500SOT89CE FPD1500SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25mx1500m

FPD1500

Abstract: transistor A114 FPD1500 SOT89
Contextual Info: FPD1500 Datasheet v3.0 1W POWER PHEMT LAYOUT: FEATURES: • • • • • 29 dBm Linear Output Power at 12 GHz 9 dB Power Gain at 12 GHz 12.5 dB Max Stable Gain at 12 GHz 41 dBm Output IP3 35% Power-Added Efficiency GENERAL DESCRIPTION: The FPD1500 is an

FILTRONIC CROSS REFERENCE

Abstract: SSG 23 TRANSISTOR FPD750SOT89 TRANSISTOR BC 135 TRANSISTOR BC 157 EB1500DFN-BA EB1500DFN-BB FPD1500DFN MIL-HDBK-263 Filtronic Compound Semiconductors
Contextual Info: FPD1500DFN Datasheet v2.3 LOW NOISE HIGH LINEARITY PACKAGED PHEMT FEATURES 1850MHZ : • • • • • • RoHS PACKAGE: 27 dBm Output Power (P1dB) 18 dB Small-Signal Gain (SSG) 1.2 dB Noise Figure 42 dBm Output IP3 45% Power-Added Efficiency 9 FPD1500DFN - RoHS compliant

Filtronic Components

Abstract: FPD1500 FPD1500SOT89 FPD1500SOT89E MIL-HDBK-263 J37 transistor
Contextual Info: FPD1500SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • PERFORMANCE 1850 MHz ♦ 27.5 dBm Output Power (P1dB) ♦ 17 dB Small-Signal Gain (SSG) ♦ 1.2 dB Noise Figure ♦ 42 dBm Output IP3 ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available

FPD1500SOT89

Abstract: FPD1500 MIL-HDBK-263 J370
Contextual Info: FPD1500SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • PERFORMANCE 1850 MHz ♦ 27.5 dBm Output Power (P1dB) ♦ 17 dB Small-Signal Gain (SSG) ♦ 1.2 dB Noise Figure ♦ 42 dBm Output IP3 ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available

Contextual Info: FPD1500 FPD15001W Power pHEMT 1W POWER pHEMT Package Style: Bare Die Product Description Features The FPD1500 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx1500μm Schottky barrier gate, defined by high resolution stepper-based photolithography. The recessed gate structure minimizes

FPD1500SOT89

Abstract: Toko inductor
Contextual Info: EB1500SOT89BB FPD1500SOT89 0.9GHz LNA EVALUATION BOARD FEATURES • 27dBm Output Power • 20dB Gain ¥ 0.7dB Noise Figure ¥ 39dBm OIP3 @ 15dBm Pout per tone ¥ Bias Vd = 5V, Id = 200mA, Vg = -0.5V ~ -0.7V DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively

ro4003

Abstract: FPD1500SOT89 RO-4003 5.8ghz
Contextual Info: EB1500SOT89AJ FPD1500SOT89 5.2GHz TO 5.8GHz EVALUATION BOARD FEATURES • 26dBm Output Power • 10dB Gain ¥ 1.6dB Noise Figure @ 5V, 200mA ¥ 42dBm OIP3 ¥ SOT89 Surface Mount Package DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively

FPD1500

Contextual Info: FPD1500 TOM3 and TOM2 Models 27/01/2005 Modelling Report FPD1500 TOM3 and TOM2 Models Version 1.0 - Device Design and Modelling Group Filtronic Compound Semiconductor Ltd. 1 FPD1500 TOM3 and TOM2 Models 27/01/2005 Introduction This report describes the models for the FPD1500 discrete p-HEMT device. The

FPD1500SOT89

Abstract: FPD1500SOT89E MIL-HDBK-263 FPD1500SOT89CE 4506 gh
Contextual Info: FPD1500SOT89 FPD1500SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky

FPD1500DFN

Abstract: FPD1500SOT89 MIL-HDBK-263
Contextual Info: FPD1500DFN LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT • PERFORMANCE 1850 MHz ♦ 27 dBm Output Power (P1dB) ♦ 18 dB Small-Signal Gain (SSG) ♦ 1.2 dB Noise Figure ♦ 42 dBm Output IP3 ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Featuring Lead Free Finish Package

FPD1500SOT89

Abstract: FPD1500SOT89E 09DB FPD1500SOT89CE
Contextual Info: FPD1500SOT89 Datasheet v3.0 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • RoHS 27.5 dBm Output Power (P1dB) 17 dB Small-Signal Gain (SSG) 1.2 dB Noise Figure 42 dBm Output IP3 50% Power-Added Efficiency FPD1500SOT89E - RoHS compliant

FPD1500DFN

Abstract: FPD750SOT89 MIL-HDBK-263 EB1500DFN-BA EB1500DFN-BB Filtronic Compound Semiconductors
Contextual Info: FPD1500DFN Datasheet v3.0 LOW NOISE HIGH LINEARITY PACKAGED PHEMT FEATURES 1850MHZ : • • • • • • RoHS PACKAGE: 27 dBm Output Power (P1dB) 18 dB Small-Signal Gain (SSG) 1.2 dB Noise Figure 42 dBm Output IP3 45% Power-Added Efficiency 9 FPD1500DFN - RoHS compliant