42DBM Search Results

Contextual Info: Multiplier Diode Selection Guide 2.0 5.0 10 Output Frequency Range GHz 4-66 20 Multiplier Diode Selection Guide Device Family Available Output Power vs. Output Frequency Low Oder Multiplier N«s3 3 5 d b rT ^ ^ _ 28dbm DVA6735 ^36dbm 38dbn^^^ DVA6736 42dbm

Contextual Info: Preliminary DS/SGN2731-320D-R FEATURES High Voltage - High Power GaN-HEMT for Radar •High Voltage Operation : VDS=50V •High Power : 320W min. @ Pin=15.8W (42dBm) •High Efficiency: 50%(typ.) @ Pin=15.8W (42dBm) •Broad Band: 2.7 to 3.1GHz • Impedance Matched Zin/Zout = 50 ohm

AP176

Abstract: TIA-1000-4
Contextual Info: Coaxial RF Instrument Amplifier 50Ω TIA-1000-4 High Power 100 to 1000 MHz Features • instrument model with built-in power supply, 110V/220V operation • high power output at 3.5dB compression, 42dBm typ. • high reverse isolation, 55 dB typ. • 100% burn-in at +25°C, 48 hrs

Contextual Info: Wideband Power Amplifier Product Features • • • • Operation across 20MHz to 1000MHz 42dBm minimum Psat through all band 35dB typical small signal gain GaN HFET RFW1G35H20-28 Application • HF/VHF/UHF Package : DP-75 Description The RFW1G35H20-28 is designed for Wideband Power Amplifier application frequencies from 20 to 1000MHz.

Contextual Info: SGN2933-320D-R FEATURES High Voltage - High Power GaN-HEMT for Radar •High Voltage Operation : VDS=50V •High Power : 400W typ. @ Pin=15.8W (42dBm) •High Efficiency: 50%(typ.) @ Pin=15.8W (42dBm) •Broad Band: 2.9 to 3.3GHz • Impedance Matched Zin/Zout = 50 ohm

Contextual Info: Preliminary ES/SGN2935-300D-R FEATURES High Voltage - High Power GaN-HEMT for Radar •High Voltage Operation : VDS=50V •High Power : 300W min. @ Pin=15.8W (42dBm) •High Efficiency: 48%(typ.) @ Pin=15.8W (42dBm) •Broad Band: 2.9 to 3.5GHz • Impedance Matched Zin/Zout = 50 ohm

Contextual Info: Coaxial RF Instrument Amplifier 50Ω TIA-1000-4 High Power 100 to 1000 MHz Features • instrument model with built-in power supply, 110V/220V operation • high power output at 3.5dB compression, 42dBm typ. • high reverse isolation, 55 dB typ. • 100% burn-in at +25°C, 48 hrs

AP176

Abstract: TIA-1000-4
Contextual Info: Coaxial RF Instrument Amplifier 50Ω TIA-1000-4 High Power 100 to 1000 MHz Features • instrument model with built-in power supply, 110V/220V operation • high power output at 3.5dB compression, 42dBm typ. • high reverse isolation, 55 dB typ. • 100% burn-in at +25°C, 48 hrs

Contextual Info: RFDA0016 RFDA0016Digital Controlled Variable Gain Amp 50 to 1000MHz, 6 bit 0.5dB LSB Control DIGITAL CONTROLLED VARIABLE GAIN AMP 50 TO 1000MHZ, 6 BIT 0.5DB LSB CONTROL  Max Gain=38.5dB at 150MHz   Class 1C HBM ESD Rating  High OIP3=42dBm at 150MHz

Contextual Info: Wideband Power Amplifier RFW1G35H20-28 Product Features Application • Operation across 20MHz to 1000MHz • 42dBm minimum Psat through all band • 35dB typical small signal gain • GaN HFET • HF/VHF/UHF Package : DP-75 Description The RFW1G35H20-28 is designed for Wideband Power Amplifier application frequencies from 20 to 1000MHz.

AP-211

Contextual Info: MMIC AP211 Product Features Application • 50 ~ 3000 MHz • GaAs MMIC • 42dBm Output IP3 • 13dB Gain • 24dBm P1dB • Single +5V Supply • CDMA,W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier Package : SOIC-8 Description AP211 is a high linearity amplifier designed with GaAs MMIC in a low cost.

AM07511542WM-SN-R

Abstract: amcomusa
Contextual Info: AM07511542WM-00 AM07511542WM-SN-R GaAs MMIC Power Amplifier June 2014 Rev2 DESCRIPTION AMCOM’s AM07511542WM is a broadband GaAs MMIC power amplifier. It has 25dB small signal gain, and 42dBm output power over the 8 to 11GHz band at 8V bias and a 5% pulsed operation. Because of high DC power dissipation, we strongly recommend to mount

EGN21B090IV

Abstract: 911-160 EGN21B
Contextual Info: EGN21B090IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Gain: 16dB typ. at Pout=42dBm(Avg.) ・High Efficiency: 33%(typ.) at Pout=42dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION

MAX3524

Abstract: MAX3524EVB
Contextual Info: 19-1764; Rev 1; 8/03 Low-Noise, High-Linearity Broadband Amplifier Features ♦ Single-Ended Input, Differential Output ♦ +4.75V to +5.25V Single-Supply Operation ♦ Broadband Operation: 44MHz to 880MHz ♦ Low Noise Figure: 4.2dB ♦ High Linearity: IIP2 42dBm , IIP3(14dBm)

RFW1G35H20-28

Abstract: ASK20556 360 to 400 mhz rf amplifier module HF VHF power amplifier module
Contextual Info: Wideband Power Amplifier RFW1G35H20-28 Product Features Application • Operation across 20MHz to 1000MHz • 42dBm minimum Psat through all band • 35dB typical small signal gain • GaN HFET • HF/VHF/UHF Package : DP-75 Description The RFW1G35H20-28 is designed for Wideband Power Amplifier application frequencies from 20 to 1000MHz.

Contextual Info: MMIC AP245 Product Features Application • 300 ~ 3000 MHz • GaAs MMIC • 42dBm Output IP3 • 26dB Gain • 21dBm P1dB • Single +5V Supply • CDMA,W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier Package : SOIC-8 Description AP245 is a high linearity amplifier designed with GaAs MMIC in a low cost.

Contextual Info: Wideband Power Amplifier Product Features • • • • Operation across 20MHz to 1000MHz 42dBm minimum Psat through all band 35dB typical small signal gain GaN HFET RFW1G35H20-28 Application • HF/VHF/UHF Package : DP-75 Description The RFW1G35H20-28 is designed for Wideband Power Amplifier application frequencies from 20 to 1000MHz.

Contextual Info: Preliminary ES/SMC2933L3212R High Voltage - High Power GaN-HEMT Pallet Amplifier FEATURES • • • • • High Voltage Operation : VDS=50V High Power : 400W typ. @ Pin=15.8W (42dBm) High Efficiency: 50%(typ.) @ Pin=15.8W (42dBm) Power Gain : 14.0dB(typ.)

shuntresistor

Abstract: MAX3524 MAX3524EVB op amp closed-loop
Contextual Info: 19-1764; Rev 0; 7/00 Low-Noise, High-Linearity Broadband Amplifier Features ♦ Single-Ended Input, Differential Output ♦ +4.75V to +5.25V Single-Supply Operation ♦ Broadband Operation: 44MHz to 880MHz ♦ Low Noise Figure: 4.2dB ♦ High Linearity: IIP2 42dBm , IIP3(14dBm)

ro4003

Abstract: FPD1500SOT89 RO-4003 5.8ghz
Contextual Info: EB1500SOT89AJ FPD1500SOT89 5.2GHz TO 5.8GHz EVALUATION BOARD FEATURES • 26dBm Output Power • 10dB Gain ¥ 1.6dB Noise Figure @ 5V, 200mA ¥ 42dBm OIP3 ¥ SOT89 Surface Mount Package DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively

Contextual Info: Coaxial RF Instrument Amplifier 50Ω TIA-1000-4 High Power 100 to 1000 MHz Features • instrument model with built-in power supply, 110V/220V operation • high power output at 3.5dB compression, 42dBm typ. • high reverse isolation, 55 dB typ. • 100% burn-in at +25°C, 48 hrs

Contextual Info: Coaxial RF Instrument Amplifier 50Ω TIA-1000-4 High Power 100 to 1000 MHz Features • instrument model with built-in power supply, 110V/220V operation • high power output at 3.5dB compression, 42dBm typ. • high reverse isolation, 55 dB typ. • 100% burn-in at +25°C, 48 hrs

Contextual Info: MMIC AP245 Product Features Application • 300 ~ 3000 MHz • GaAs MMIC • 42dBm Output IP3 • 26dB Gain • 21dBm P1dB • Single +5V Supply • CDMA,W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier Package : SOIC-8 Description AP245 is a high linearity amplifier designed with GaAs MMIC in a low cost.

Contextual Info: SGN2933-320D-R FEATURES High Voltage - High Power GaN-HEMT for Radar •High Voltage Operation : VDS=50V •High Power : 400W typ. @ Pin=15.8W (42dBm) •High Efficiency: 50%(typ.) @ Pin=15.8W (42dBm) •Broad Band: 2.9 to 3.3GHz • Impedance Matched Zin/Zout = 50 ohm