P100 Search Results

E78996 P125

Abstract: P102W E78996 E78996 datasheet bridge E78996 datasheet full bridge p135 E78996 datasheet full bridge p125 E78996 p135 E78996 scr D-19 P100 P101
Contextual Info: P100 Series Vishay High Power Products Passivated Assembled Circuit Elements, 25 A FEATURES • Glass passivated junctions for greater reliability • Electrically isolated base plate • Available up to 1200 VRRM/VDRM • High dynamic characteristics • Wide choice of circuit configurations

P102W

Abstract: 25x0
Contextual Info: P100 Series Bulletin I27125 rev. A 04/99 PacePak Circuit Type and Coding * Circuit "0" Circuit "2" Circuit "3" Terminal Positions G1 G1 Schematic diagram diagram G3 G2 AC1 AC2 AC1 AC2 AC1 AC2 G4 G2 - G1 (-) (+) Single Phase Hybrid Bridge CommonCathode G2

Contextual Info: Subscriber Line Interface Circuit SLIC Protection - P1001SC SIDACtor Data Book S u b s c rib e r Line In te rfa c e C irc u it (SLIC) P ro te c tio n - P1001SC PIN 3 (V rr) PIN 1 PIN 2 (Anode) [cari«]*] The P1001SC SIDACtor is a 500A rated solid state protection

2D70

Abstract: xfmrs rev.a
Contextual Info: 2. 1. M e c h a n ic a l D im e n s io n s : S c h e m a tic : A 1 3 .2 ± 1 .0 D -H I— 3.0=t 1,0 XFMRS XFHCL4M co ^ 03 <s¡ O ^ -H -7R3M YYWW TOP VIEW BOTTOM VIEW 3. E l e c t r i c a l S p e c i f i c a t i o n s : 25°C OCL: 7.3uH ±20% P100KHZ, 0.1V 0ADC

P1006BD

Abstract: P1006-BD XP1006-BD GAAS FET AMPLIFIER x-band 10w Mimix Asia
Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2008 - Rev 11-Nov-08 P1006-BD Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing

P1000 diode

Abstract: diode p1000 84-1LMI P1000 XB1004 XP1000 XU1000
Contextual Info: 17.0-24.0 GHz GaAs MMIC Power Amplifier P1000 May 2005 - Rev 05-May-05 Features Chip Device Layout High Linearity Output Amplifier Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 19.0 dB Small Signal Gain

pHEMT transistor MTBF

Contextual Info: 17.0-24.0 GHz GaAs MMIC Surface Mount Power Amplifier March 2005 - Rev 01-Mar-05 P1000P1 Features Packaged Chip Device tio n Surface Mount Leadless Package High Linearity Output Amplifier Temperature Compensated Output Power Detector Excellent Input/Output Match

tanaka gold wire

Abstract: MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006 XP1006 bonding X-band GaAs pHEMT MMIC Chip
Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier March 2006 - Rev 13-Mar-06 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing

VD-1-54

Contextual Info: 17.0-21.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1009 May 2005 - Rev 05-May-05 Features Chip Device Layout Excellent Linear Output Amplifier Stage 20.0 dB Small Signal Gain +29.5 dBm P1dB Compression Point +38.0 dBm Third Order Intercept OIP3

SOCKET TQFP100

Abstract: TQFP 100 socket transistor p98 transistor p86 7014-100-6-08 P39-P41 AD P71 P56-P57 transistor be p88 transistor p88
Contextual Info: 5 4 3 2 1 TQFP-100 Socket card Socket card #3 D D P100 P99 P98 P97 P96 P95 P94 P93 P92 P91 P90 P89 P88 P87 P86 P85 P84 P83 P82 P81 P80 P79 P78 P77 P76 P[71:100] J2 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 79 78 77 76 ST1 P71 P73 P75

P130

Abstract: P125 P100 P110 P145
Contextual Info: Dimensions mm A B C D 5.9±0.2 6.7±0.2 2.5±0.2 0.55±0.04 E 36±3 Model Rated Functioning Temperature (ºC) Functioning Temperature (ºC) P100 103 98±2 70 180 P110 117 112±2 85 180 P125 127 124±2 95 180 P130 136 130±2 105 180 P145 150 145±2 115 180

Contextual Info: 100 PIN PLASTIC QFP 14x20 A B F Q 5°±5° 31 30 S 100 1 detail of lead end C 51 50 D 80 81 G H I M J Q M P K N L P100G-65-12-2 NOTE Each lead centerline is located within 0.15 mm (0.006 inch) of its true position (T.P.) at maximum material condition. ITEM

Contextual Info: Prohibition sign - US-PML-P100 D100 - 1014218 Please be informed that the data shown in this PDF Document is generated from our Online Catalog. Please find the complete data in the user's documentation. Our General Terms of Use for Downloads are valid

Contextual Info: INFRARED DETECTOR InAs photovoltaic detector P10090 series Low noise, high reliability infrared detectors for 3 µm band InAs photovoltaic detectors have high sensitivity in the infrared region around 3 µm as with PbS photoconductive detectors, and also

Westinghouse thyristor 251

Abstract: thyristor westinghouse 251 P100PH06FJ0 thyristor 300 volt
Contextual Info: nE , üJESTCODE SEMICONDUCTORS D • DGOma 7 ■ 7 ''2 iT - * / ^ Technical Publication WESTCODE SEMICONDUCTORS P100P/R Issue 1 January 1985 Inverter Grade Stud-Base Thyristor Type P10QP/P100R 85 amperes average: up to 800 volts VRRM/V0RM R a t i n g s Maximum values at 12S°C Tj unless stated otherwise

RIVKLE

Abstract: P2007 P1007 P100-7 P2007 mandrel for P2005 blind rivet m101
Contextual Info: 2319/09.02 RIVKLE P1007/ P2007 Pneumatic setting tools for blind rivet nuts and studs RIVKLE® P1007: Lightweight and compact RIVKLE® P2007: Flexible and versatile RIVKLE® P1007 / P2007 – For setting blind rivet nuts and studs The advantages at a glance

IR E78996 p135

Abstract: E78996 full bridge p135 Diode SCR italy PART NO. P125 E78996 p102w ir e78996 p132 E78996 datasheet full bridge p135 E78996 P125 E78996 P134 IR E78996 p125 P100 Series
Contextual Info: Bulletin I27125 rev. A 04/99 P100 SERIES PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Features Glass passivated junctions for greater reliability 25A Electrically isolated base plate Available up to 1200 V RRM, V DRM High dynamic characteristics Wide choice of circuit configurations

P1007LC10X-12X

Abstract: P1007LS Thyristor 12kV 10 kA
Contextual Info: Date:- 01 August 2012 Data Sheet Issue:- 2 Fast Turn-off Thyristor Types P1007LC10x to P1007LC12x Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, note 1 1000-1200 V VDSM Non-repetitive peak off-state voltage, (note 1)

Y5P 1NF

Abstract: n220 N4700 N2200 560pF n150 transistor 15nf marking 222 N1500 N330
Contextual Info: Disc Ceramic Capacitors Marking DIG. 2 Logo: Only in diam. ≥ 6mm O TC / Class General Purpose A = NP0 / I *B = P100 / I *C = N150 / I *D = N220 / I *E = N330 / I *F = N470 / I G = N750 / I H = N1500 / I *I = N2200 / I *J = N4700 / I K = SL M = Y5E / II N = Y5F / II

TZP115

Abstract: TZ-P115
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TepM onpeA O xpaH M TenM Ha MaKCMManbHoe HanpaweHMe Kofl: TeMnepaiypa tok 2 A m 3 A : 250 VAC MaKCMManbHbM tok cpa6aTH BaH M a TZ-P90/2 TZ-P100/2 TZ-P115/2 TZ-P120/2 TZ-P125/2 TZ-P130/2 TZ-P140/2

Contextual Info: bOE 0 P100 i l ADTr • TDGlTMb 00OG034 Zementierter Drahtdrehwiderstand VISHAY/DRAL D|W fll 476 Potentiom ètre bobiné cim enté Cemented w irew ound potentiom eter bel 120 W Fertigungsbereich Plage des valeurs Resistance range B elastbarkeit ÖQ2 ■ à

polaroid

Contextual Info: Polaroid P500 Lithium Power Pack 6-Volt Battery Prelim inary Technical Data Sheet T h e P o la r o id P500 L ith iu m Power Pack is a further technical advance of Polaroid’s planar battery technology. Dimensionally identical to the Polaroid P100 Battery, the 6-Volt

Contextual Info: Tripp Lite 1111 West 35th Street Chicago, IL 60609 USA Telephone: + 773 869 1234 E-mail: saleshelp@tripplite.com Model #: P100-001 Computer Cable, 1-ft. AT Serial Gold Adapter DB9F/25M Highlights One foot "pigtail" – can be used as a serial modem cable

Contextual Info: .100” 2.54mm Through Hole Bottom Entry Connector 1000 SERIES “TERMACON” PART NUMBER LEGEND 100X-2XX-2X0X-P100 BLACK STRIPE OPTIONAL CONTACT TAIL LENGTH. (SEE TABLE II) CONTACT MATERIAL (SEE NOTE 1) NUMBER OF POSITONS (SEE TABLE 1) CONTACT PLATING (SEE NOTE 2)