XB1004 Search Results

206E

Abstract: XB1004-BD XB1004-BD-000V XB1004-BD-000W XB1004-BD-EV1
Contextual Info: XB1004-BD Buffer Amplifier 16.0-30.0 GHz Rev. V1 Features Chip Device Layout •      High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.2 dB Noise Figure at Low Noise Bias

RF Product Device Data

Abstract: XB1004 XP1013 XU1002-QD XU1002-QD-0N00 XU1002-QD-0N0T XU1002-QD-EV1
Contextual Info: 17.0-25.0 GHz GaAs Transmitter QFN, 7x7mm U1002-QD July 2008 - Rev 14-Jul-08 Features Sub-harmonic Transmitter Integrated IR Mixer, LO Buffer & Output Amplifier +13 dBm P1dB 2.0 dBm LO Drive Level 20.0 dB Image Rejection, 9.0 dB Conversion Gain 7x7 mm, QFN

QFN 7X7

Abstract: XB1004 XP1013 XU1003-QD XU1003-QD-0N00 XU1003-QD-0N0T XU1003-QD-EV1 2ghz diode
Contextual Info: 19.0-26.0 GHz GaAs Transmitter QFN, 7x7mm U1003-QD August 2006 - Rev 31-Aug-06 Features Chip Device Layout Sub-harmonic Transmitter Integrated IR Mixer, LO Buffer & Output Amplifier 2.0 dBm LO Drive Level 15.0 dB Image Rejection, 10.0 dB Conversion Gain 7x7 mm, QFN

P1000 diode

Abstract: diode p1000 84-1LMI P1000 XB1004 XP1000 XU1000
Contextual Info: 17.0-24.0 GHz GaAs MMIC Power Amplifier P1000 May 2005 - Rev 05-May-05 Features Chip Device Layout High Linearity Output Amplifier Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 19.0 dB Small Signal Gain

inductance R600

Contextual Info: 21.2-23.6 GHz GaAs MMIC Transmitter March 2005 - Rev 01-Mar-05 Features Chip Device Layout tio n Sub-harmonic Transmitter Integrated IR Mixer, LO Buffer & Output Amplifier +20.0 dBm Output Third Order Intercept OIP3 2.0 dBm LO Drive Level 15.0 dB Image Rejection

U1000

Abstract: XB1004 XU1000
Contextual Info: 17.0-27.0 GHz GaAs MMIC Transmitter U1000 May 2005 - Rev 13-May-05 Features Chip Device Layout Fundamental Transmitter Low DC Power Consumption Optional Power Bias Configuration 0.0 dB Conversion Gain +12.0 dBm Third Order Intercept IIP3 100% On-Wafer RF and DC Testing

74613

Abstract: B1004-BD TS3332LD XB1004-BD 96330
Contextual Info: 16.0-30.0 GHz GaAs MMIC Buffer Amplifier B1004-BD June 2007 - Rev 12-Jun-07 Features High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.2 dB Noise Figure at Low Noise Bias +19.0 dBm P1dB Compression Point at Power Bias

B1004-BD

Abstract: TS3332LD XB1004-BD
Contextual Info: 16.0-30.0 GHz GaAs MMIC Buffer Amplifier B1004-BD June 2007 - Rev 12-Jun-07 Features High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.2 dB Noise Figure at Low Noise Bias +19.0 dBm P1dB Compression Point at Power Bias

DM6030HK

Abstract: TS3332LD XB1004-BD XP1013-BD XU1003-BD XU1003-BD-000V XU1003-BD-EV1
Contextual Info: 19.0-26.0 GHz GaAs MMIC Transmitter U1003-BD August 2007 - Rev 20-Aug-07 Features Chip Device Layout Sub-harmonic Transmitter Integrated IR Mixer, LO Buffer & Output Amplifier 2.0 dBm LO Drive Level 15.0 dB Image Rejection, 10.0 dB Conversion Gain 100% On-Wafer RF and DC Testing

XB1004

Abstract: XP1013 XU1003-QD XU1003-QD-0N00 XU1003-QD-0N0T XU1003-QD-EV1
Contextual Info: 19.0-26.0 GHz GaAs Transmitter QFN, 7x7mm U1003-QD July 2008 - Rev 14-Jul-08 Features Sub-harmonic Transmitter Integrated IR Mixer, LO Buffer & Output Amplifier 2.0 dBm LO Drive Level 15.0 dB Image Rejection, 10.0 dB Conversion Gain 7x7 mm, QFN General Description

Contextual Info: 12.0-27.0 GHz GaAs MMIC Buffer Amplifier, QFN B1009-QT December 2006 - Rev 12-Dec-06 Features Excellent Transmit LO/Output Buffer Stage On-Chip ESD Protection 16.0 dB Small Signal Gain +22.0 dBm P1dB Compression Point RoHS Compliant SMD, 3x3 mm QFN Package

B1009

Abstract: XB1009-QT XB1009-QT-0G00 XB1009-QT-EV1 XP1022-QF XU1002 XU1002-QD XB1004-QC
Contextual Info: 12.0-27.0 GHz GaAs MMIC Buffer Amplifier, QFN B1009-QT February 2007 - Rev 08-Feb-07 Features Excellent Transmit LO/Output Buffer Stage On-Chip ESD Protection 16.0 dB Small Signal Gain +22.0 dBm P1dB Compression Point RoHS Compliant SMD, 3x3 mm QFN Package

Contextual Info: 17.0-25.0 GHz GaAs MMIC Power Amplifier, QFN P1022-QF July 2008 - Rev 17-Jul-08 Features Excellent Transmit Output Stage Temperature Compensated Output Detector On-Chip ESD Protection 20.0 dB Small Signal Gain +28.0 dBm P1dB Compression Point RoHS Compliant SMD, 4x4 mm QFN Package

UC1617

Contextual Info: 17.7-19.7 GHz GaAs MMIC Transmitter March 2005 - Rev 01-Mar-05 Features Chip Device Layout tio n Sub-harmonic Transmitter Integrated IR Mixer, Lo Buffer & Output Amplifier +20.0 dBm Output Third Order Intercept OIP3 2.0 dBm LO Drive Level 15.0 dB Image Rejection

Contextual Info: 16.0-30.0 GHz GaAs MMIC Buffer Amplifier B1004 April 2005 - Rev 01-Apr-05 Features Chip Device Layout High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.2 dB Noise Figure at Low Noise Bias

U1003

Contextual Info: 19.0-26.0 GHz GaAs MMIC Transmitter U1003 May 2005 - Rev 13-May-05 Features Chip Device Layout Sub-harmonic Transmitter Integrated IR Mixer, LO Buffer & Output Amplifier +20.0 dBm Output Third Order Intercept OIP3 2.0 dBm LO Drive Level 15.0 dB Image Rejection, 8.0 dB Conversion Gain

84-1LMI

Abstract: U1002 XB1004 XP1013 XU1002
Contextual Info: 18.0-25.0 GHz GaAs MMIC Transmitter U1002 May 2005 - Rev 13-May-05 Features Chip Device Layout Sub-harmonic Transmitter Integrated IR Mixer, LO Buffer & Output Amplifier +20.0 dBm Output Third Order Intercept OIP3 2.0 dBm LO Drive Level 15.0 dB Image Rejection, 10.0 dB Conversion Gain

VD135

Contextual Info: 18.0-25.0 GHz GaAs MMIC Transmitter U1002 May 2005 - Rev 13-May-05 Features Chip Device Layout Sub-harmonic Transmitter Integrated IR Mixer, LO Buffer & Output Amplifier +20.0 dBm Output Third Order Intercept OIP3 2.0 dBm LO Drive Level 15.0 dB Image Rejection, 10.0 dB Conversion Gain

XB1004

Abstract: XP1013 XU1002-QD XU1002-QD-0N00 XU1002-QD-0N0T XU1002-QD-EV1 U1002-QD
Contextual Info: 17.0-25.0 GHz GaAs Transmitter QFN, 7x7mm U1002-QD November 2006 - Rev 21-Nov-06 Features Sub-harmonic Transmitter Integrated IR Mixer, LO Buffer & Output Amplifier +13 dBm P1dB 2.0 dBm LO Drive Level 20.0 dB Image Rejection, 9.0 dB Conversion Gain 7x7 mm, QFN

YCL 24s05

Abstract: 05s05 05S12 XB125-05S12 XB500-24S05 YCL SP200-24S05 XB200-05S15 XB300-24S05 XB100-12S15 XB250-05S12
Contextual Info: 3watt /24pins DIL/2000Vdc isolation XB series/2:1 input range Feature: l l l l l l YCL Low Cost 2:1 input range Industry-standard package and pinout 2000Vdc Input/Output Isolation Single and Dual Outputs No External Components required Specifications: At 25°C

Contextual Info: 17.0-25.0 GHz GaAs MMIC Power Amplifier P1022-BD February 2007 - Rev 05-Feb-07 Features Chip Device Layout Excellent Transmit Output Stage Temperature Compensated Output Detector On-Chip ESD Protection 20.0 dB Small Signal Gain +28.0 dBm P1dB Compression Point

B1009

Abstract: amplifier TRANSISTOR 12 GHZ qfn 3x3 16L XB1009-QT XB1009-QT-0G00 XB1009-QT-EV1 XP1022-QF XU1002 XU1002-QD
Contextual Info: 12.0-27.0 GHz GaAs MMIC Buffer Amplifier, QFN B1009-QT February 2007 - Rev 08-Feb-07 Features Excellent Transmit LO/Output Buffer Stage On-Chip ESD Protection 16.0 dB Small Signal Gain +22.0 dBm P1dB Compression Point RoHS Compliant SMD, 3x3 mm QFN Package

52521

Abstract: 74613 78304 B1004 XB1001 XB1004 XP1000 XU1000
Contextual Info: 16.0-30.0 GHz GaAs MMIC Buffer Amplifier B1004 March 2005 - Rev 15-Mar-05 Features Chip Device Layout High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.2 dB Noise Figure at Low Noise Bias

Contextual Info: 19.0-26.0 GHz GaAs MMIC Transmitter U1003 June 2005 - Rev 21-Jun-05 Features Chip Device Layout Sub-harmonic Transmitter Integrated IR Mixer, LO Buffer & Output Amplifier 2.0 dBm LO Drive Level 15.0 dB Image Rejection, 10.0 dB Conversion Gain 100% On-Wafer RF and DC Testing