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    P1006BD

    Abstract: P1006-BD XP1006-BD GAAS FET AMPLIFIER x-band 10w Mimix Asia
    Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2008 - Rev 11-Nov-08 P1006-BD Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing


    Original     		11-nov-08p1006-bdmil-std-883xp1006+6xp1006-bd-000vxp1006-bd-ev1p1006bdxp1006-bdgaas fet amplifier x-band 10wmimix asia PDF

    GAAS FET AMPLIFIER x-band 10w

    Abstract: XP1006-BD XP1006-BD-EV1 P1006BD MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006 XP1006-BD-000V
    Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier August 2007 - Rev 03-Aug-07 P1006-BD Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing


    Original     		03-aug-07p1006-bdmil-std-883xp1006+9xp1006-bd-000vxp1006-bd-ev1gaas fet amplifier x-band 10wxp1006-bdp1006bdmmic x-band amplifierp1006dm6030hkts3332ld PDF