EPA240BV
Abstract: EPA240B
Contextual Info: EPA240B/EPA240BV High Efficiency Heterojunction Power FET FEATURES • • • • • • 960 50 +32.5dBm TYPICAL OUTPUT POWER 8.0dB TYPICAL POWER GAIN FOR EPA240B AND 9.5dB FOR EPA240BV AT 18GHz 0.3 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION
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GM 90 562 573
Abstract: EPA240B-100F
Contextual Info: Excelics EPA240B-100F DATA SHEET High Efficiency Heterojunction Power FET ' 7<3 ELECTRICAL CHARACTERISTICS Ta = 25 OC SYMBOLS P1dB G1dB PAE • PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=8GHz Vds=8V, Ids=50% Idss f=12GHz Gain at 1dB Compression
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AuSn eutectic
Abstract: EPA240B100P 100MIL EPA240B-100P
Contextual Info: EPA240B-100P High Efficiency Heterojunction Power FET UPDATED 02/15/2005 • • • • • • NON-HERMETIC 100MIL METAL FLANGE PACKAGE +32.5dBm TYPICAL OUTPUT POWER 10.5dB TYPICAL POWER GAIN AT 12GHz 0.3 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION
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EPA240BV
Abstract: EPA240B
Contextual Info: Excelics EPA240B/EPA240BV DATA SHEET High Efficiency Heterojunction Power FET 960 • • • • • • • +32.5dBm TYPICAL OUTPUT POWER 8.0dB TYPICAL POWER GAIN FOR EPA240B AND 9.5dB FOR EPA240BV AT 18GHz 0.3 X 2400 MICRON RECESSED “MUSHROOM” GATE
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Filtronic
Abstract: EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500
Contextual Info: FILTRONIC COMPOUND SEMICONDUCTORS PRODUCT CROSS-REFERENCE GUIDE DISCRETE UNPACKAGED DEVICES Note 1: Filtronic P/N Excelics FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B EPA120E EPA120A EPA080A EPA030C EPA018A EPA018A MwT MwT-PH15
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EPA080A-100P
Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
Contextual Info: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.
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b1415
Abstract: GAAS FET CROSS REFERENCE gaas fet 70 mil micro-X Package power fet 70 mil micro-X Package EPA240BV N5 micro-X Package EPA060B-70 MIXER EMA 0.5w ,GaAs FET EPA480C-SOT89
Contextual Info: RTC/5/01/PSINTRO EXCELICS SEMICONDUCTOR, INC. PRODUCT SELECTION GUIDE Products Excelics Semiconductor, Inc. was founded in 1995 to become a world wide leading merchant supplier of high performance R.F. and microwave semiconductor discrete devices and integrated circuits ICs
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rtc/5/01/psintro24-hour200oc275oc+10b1415gaas fet cross referencegaas fet 70 mil micro-x packagepower fet 70 mil micro-x packageepa240bvn5 micro-x packageepa060b-70mixer ema0.5w ,gaas fetepa480c-sot89
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Curtice
Abstract: EFA018A EPA030A EPA480C EPA060B EFA040A EFA025A EPA025 220E-12 Excelics EPA018A
Contextual Info: Large Signal Model Parameters for Curtice-Cubic Model For Low Distortion GaAs Power FETs Curtice-Ettenburg Model Parameter BETA GAMMA VOUT0 VT0 A0 A1 A2 A3 TAU R1 R2 VB0 VBI RF IS N RDS CRF RD RG RS RIN CGSO CGDO FC CDS CGS CGD KF4 AF TNOM XTI EG VTOTC BETATCE
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EPA018A
Abstract: EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C
Contextual Info: EXCELICS SEMICONDUCTOR, INC. Small Signal Equivalent Circuit Model The small signal model shown below can be useful for extrapolating and interpolating the S-parameters as well as for use in circuit simulators that cannot handle S-parameters directly. The element values are derived by fitting the
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