EPA060A
Abstract: 419-1 MAG EPA060AV
Contextual Info: Excelics EPA060A/EPA060AV DATA SHEET High Efficiency Heterojunction Power FET • • • • • • • +26.5dBm TYPICAL OUTPUT POWER 10.5dB TYPICAL POWER GAIN FOR EPA060A AND 11.5dB FOR EPA060AV AT 18GHz 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION
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EPA060A
Abstract: EPA060AV EPA160AV
Contextual Info: EPA060A/EPA060AV High Efficiency Heterojunction Power FET FEATURES • • • • • • • +26.5dBm TYPICAL OUTPUT POWER 10.5dB TYPICAL POWER GAIN FOR EPA060A AND 11.5dB FOR EPA060AV AT 18GHz 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION
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EPA060A
Abstract: FET 3205
Contextual Info: Excelics EPA060A DATA SHEET High Efficiency Heterojunction Power FET • • • • • • +26.5dBm TYPICAL OUTPUT POWER 10.5dB TYPICAL POWER GAIN AT 18GHz 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION
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EPA080A-100P
Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
Contextual Info: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.
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Curtice
Abstract: EFA018A EPA030A EPA480C EPA060B EFA040A EFA025A EPA025 220E-12 Excelics EPA018A
Contextual Info: Large Signal Model Parameters for Curtice-Cubic Model For Low Distortion GaAs Power FETs Curtice-Ettenburg Model Parameter BETA GAMMA VOUT0 VT0 A0 A1 A2 A3 TAU R1 R2 VB0 VBI RF IS N RDS CRF RD RG RS RIN CGSO CGDO FC CDS CGS CGD KF4 AF TNOM XTI EG VTOTC BETATCE
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EPA018A
Abstract: EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C
Contextual Info: EXCELICS SEMICONDUCTOR, INC. Small Signal Equivalent Circuit Model The small signal model shown below can be useful for extrapolating and interpolating the S-parameters as well as for use in circuit simulators that cannot handle S-parameters directly. The element values are derived by fitting the
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