513 s12 datasheet
Abstract: EPA060BV EPA060B
Contextual Info: Excelics EPA060B/EPA060BV DATA SHEET High Efficiency Heterojunction Power FET • • • • • • • • +26.5dBm TYPICAL OUTPUT POWER 10.0dB TYPICAL POWER GAIN FOR EPA060B AND 11.5dB FOR EPA060BV AT 18GHz 0.4dB TYPICAL NOISE FIGURE AT 2GHz 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE
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EPA060B-70
Abstract: 2657 FET EPA060B
Contextual Info: Excelics EPA060B-70 DATA SHEET High Efficiency Heterojunction Power FET 6 6 * PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY Applications • High Dynamic Range LNA • DC to 18 GHz ' 0LQ $OO /HDGV Features • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE
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EPA025A70
Abstract: EPA060B-70 EFA018A EPA060B EPA025 EPA025A EPB018A5 EPA018A EPA080A-70 EPA080A
Contextual Info: EXCELICS SEMICONDUCTOR, INC. RTC/10/01/98 Typical Noise Figure/Associated Gain For Excelics FETs Device Type Bias Condition Frequency N.F. Typical Ga (Typical) A.) Power FETs EPA080A 6V/25% Idss 12GHz 1.20dB 9.5dB EPA060B 6V/25% Idss 12GHz 1.15dB 10.0dB
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rtc/10/01/98epa080a12ghzepa060b+11epa040aepa025av/15mav/10maepa025a70epa060b-70efa018aepa025epb018a5epa018aepa080a-70
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EPA060B
Abstract: EPA060BV EPA060B/EPA060BV
Contextual Info: EPA060B/EPA060BV High Efficiency Heterojunction Power FET 350 • • • • • • +26.5dBm TYPICAL OUTPUT POWER 10.0dB TYPICAL POWER GAIN FOR EPA060B AND 11.5dB FOR EPA060BV AT 18GHz 0.4dB TYPICAL NOISE FIGURE AT 2GHz 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE
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EPA080A-100P
Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
Contextual Info: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.
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EFA018A
Abstract: EPA025A EPA060B-70 EFA240D-SOT89 EPA018A EPA060B EPA018 EPB018A5 CP083 EFA025A-70
Contextual Info: 310 De Guigne Drive, Sunnyvale, CA 94085 Tel: 408-737-1711 Fax: 408-737-1868 Quick Reference Guide for 2 GHz Applications Device Type Bias A Discrete Devices: EPB018A5 EPB018A7 EPB018A9 EPB025A 2V/15mA 2V/15mA 2V/15mA 2V/15mA 15 15 15 15 0.4 0.5 0.6 0.5 20
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b1415
Abstract: GAAS FET CROSS REFERENCE gaas fet 70 mil micro-X Package power fet 70 mil micro-X Package EPA240BV N5 micro-X Package EPA060B-70 MIXER EMA 0.5w ,GaAs FET EPA480C-SOT89
Contextual Info: RTC/5/01/PSINTRO EXCELICS SEMICONDUCTOR, INC. PRODUCT SELECTION GUIDE Products Excelics Semiconductor, Inc. was founded in 1995 to become a world wide leading merchant supplier of high performance R.F. and microwave semiconductor discrete devices and integrated circuits ICs
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rtc/5/01/psintro24-hour200oc275oc+10b1415gaas fet cross referencegaas fet 70 mil micro-x packagepower fet 70 mil micro-x packageepa240bvn5 micro-x packageepa060b-70mixer ema0.5w ,gaas fetepa480c-sot89
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Curtice
Abstract: EFA018A EPA030A EPA480C EPA060B EFA040A EFA025A EPA025 220E-12 Excelics EPA018A
Contextual Info: Large Signal Model Parameters for Curtice-Cubic Model For Low Distortion GaAs Power FETs Curtice-Ettenburg Model Parameter BETA GAMMA VOUT0 VT0 A0 A1 A2 A3 TAU R1 R2 VB0 VBI RF IS N RDS CRF RD RG RS RIN CGSO CGDO FC CDS CGS CGD KF4 AF TNOM XTI EG VTOTC BETATCE
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EPA018A
Abstract: EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C
Contextual Info: EXCELICS SEMICONDUCTOR, INC. Small Signal Equivalent Circuit Model The small signal model shown below can be useful for extrapolating and interpolating the S-parameters as well as for use in circuit simulators that cannot handle S-parameters directly. The element values are derived by fitting the
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