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    EFA960B Datasheets (1)

    Excelics Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    EFA960B
    		Excelics Semiconductor 8-12V low distortion GaAs power FET Original PDF 27.58KB 2

    EFA960B Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    EFA960B

    Contextual Info: Excelics EFA960B DATA SHEET Low Distortion GaAs Power FET • • • • • •  +36.5dBm TYPICAL OUTPUT POWER 16.0dB TYPICAL POWER GAIN AT 2GHz 0.5 X 9600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION AND PLATED HEAT SINK ADVANCED EPITAXIAL DOPING PROFILE


    Original     		efa960b160ma PDF

    Curtice

    Abstract: EFA018A EPA030A EPA480C EPA060B EFA040A EFA025A EPA025 220E-12 Excelics EPA018A
    Contextual Info: Large Signal Model Parameters for Curtice-Cubic Model For Low Distortion GaAs Power FETs Curtice-Ettenburg Model Parameter BETA GAMMA VOUT0 VT0 A0 A1 A2 A3 TAU R1 R2 VB0 VBI RF IS N RDS CRF RD RG RS RIN CGSO CGDO FC CDS CGS CGD KF4 AF TNOM XTI EG VTOTC BETATCE


    Original     		efa018a00e-1240e-1400e-08+1263e-1380e-1400e-14efa025acurticeepa030aepa480cepa060befa040aepa025220e-12excelics epa018a PDF

    EPA018A

    Abstract: EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C
    Contextual Info: EXCELICS SEMICONDUCTOR, INC. Small Signal Equivalent Circuit Model The small signal model shown below can be useful for extrapolating and interpolating the S-parameters as well as for use in circuit simulators that cannot handle S-parameters directly. The element values are derived by fitting the


    Original     		epa018aepa025aepa030cepa040a+11epa060aefa480befa480cefa720aefa960befa1200aepa060befa018aexcelics epa018aepa480cepa240d PDF