EFA018A
Contextual Info: EFA018A Low Distortion GaAs Power FET FEATURES • • • • • • • • VERY HIGH fmax: 100GHz +18.5dBm TYPICAL OUTPUT POWER 11.5dB TYPICAL POWER GAIN AT 12GHz TYPICAL 1.1dB NOISE FIGURE AND 10.5dB ASSOCIATED GAIN AT 12GHz 0.3 X 180 MICRON RECESSED “MUSHROOM” GATE
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EFA018A
Abstract: fet 2819 18 g
Contextual Info: Excelics EFA018A DATA SHEET Low Distortion GaAs Power FET • • • • • • • • VERY HIGH fmax: 100GHz +18.5dBm TYPICAL OUTPUT POWER 11.5dB TYPICAL POWER GAIN AT 12GHz TYPICAL 1.1dB NOISE FIGURE AND 10.5dB ASSOCIATED GAIN AT 12GHz 0.3 X 180 MICRON RECESSED “MUSHROOM” GATE
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EFA018A-70
Abstract: EFA018A
Contextual Info: Excelics EFA018A-70 DATA SHEET Low Distortion GaAs Power FET 20 P1dB G1dB PAE NF Ga S S 70 D G All Dimensions In mils. ELECTRICAL CHARACTERISTICS Ta = 25 OC SYMBOLS 44 19 4 40 • • • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +18.5dBm TYPICAL OUTPUT POWER
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EPA080A-100P
Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
Contextual Info: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.
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EFA018A
Abstract: EPA025A EPA060B-70 EFA240D-SOT89 EPA018A EPA060B EPA018 EPB018A5 CP083 EFA025A-70
Contextual Info: 310 De Guigne Drive, Sunnyvale, CA 94085 Tel: 408-737-1711 Fax: 408-737-1868 Quick Reference Guide for 2 GHz Applications Device Type Bias A Discrete Devices: EPB018A5 EPB018A7 EPB018A9 EPB025A 2V/15mA 2V/15mA 2V/15mA 2V/15mA 15 15 15 15 0.4 0.5 0.6 0.5 20
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Curtice
Abstract: EFA018A EPA030A EPA480C EPA060B EFA040A EFA025A EPA025 220E-12 Excelics EPA018A
Contextual Info: Large Signal Model Parameters for Curtice-Cubic Model For Low Distortion GaAs Power FETs Curtice-Ettenburg Model Parameter BETA GAMMA VOUT0 VT0 A0 A1 A2 A3 TAU R1 R2 VB0 VBI RF IS N RDS CRF RD RG RS RIN CGSO CGDO FC CDS CGS CGD KF4 AF TNOM XTI EG VTOTC BETATCE
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EPA018A
Abstract: EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C
Contextual Info: EXCELICS SEMICONDUCTOR, INC. Small Signal Equivalent Circuit Model The small signal model shown below can be useful for extrapolating and interpolating the S-parameters as well as for use in circuit simulators that cannot handle S-parameters directly. The element values are derived by fitting the
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epa018aepa025aepa030cepa040a+11epa060aefa480befa480cefa720aefa960befa1200aepa060befa018aexcelics epa018aepa480cepa240d
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EPA025A70
Abstract: EPA060B-70 EFA018A EPA060B EPA025 EPA025A EPB018A5 EPA018A EPA080A-70 EPA080A
Contextual Info: EXCELICS SEMICONDUCTOR, INC. RTC/10/01/98 Typical Noise Figure/Associated Gain For Excelics FETs Device Type Bias Condition Frequency N.F. Typical Ga (Typical) A.) Power FETs EPA080A 6V/25% Idss 12GHz 1.20dB 9.5dB EPA060B 6V/25% Idss 12GHz 1.15dB 10.0dB
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