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EFA480C Datasheets (6)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
EFA480C		Excelics Semiconductor	8-12V low distortion GaAs power FET	Original	PDF	24.17KB	2
EFA480C-180F		Excelics Semiconductor	8-12V low distortion GaAs power FET	Original	PDF	24.8KB	2
EFA480C-CP083		Excelics Semiconductor	Low Distortion GaAs Power FET	Original	PDF	28.53KB	2
EFA480C-CPO83		Excelics Semiconductor	Low Distortion GaAs Power FET	Original	PDF	28.53KB	2
EFA480C SOT89		Excelics Semiconductor	DC-4GHz, 7-12V low distortion GaAs power FET	Original	PDF	37.19KB	2
EFA480C-SOT89		Unknown	DC-4GHz Low Distortion GaAs Power FET	Original	PDF	37.19KB	2

EFA480C Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
EFA480C-SOT89 Contextual Info: Excelics EFA480C-SOT89 DATA SHEET DC-4GHz Low Distortion GaAs Power FET Features '5$,1 6285& (Top View All Dimensions In Mils Applications • • $ &# *$7( • • • LOW COST SURFACE-MOUNT PLASTIC PACKAGE	Original	efa480c-sot89 48dbm	PDF
EFA480C Contextual Info: EFA480C Low Distortion GaAs Power FET FEATURES • • • • • • 680 104 +34.0dBm TYPICAL OUTPUT POWER 18.0dB TYPICAL POWER GAIN AT 2GHz 0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION AND PLATED HEAT SINK ADVANCED EPITAXIAL DOPING PROFILE	Original	efa480c	PDF
EFA480C Contextual Info: Excelics EFA480C DATA SHEET Low Distortion GaAs Power FET 680 • • • • • • +34.0dBm TYPICAL OUTPUT POWER 18.0dB TYPICAL POWER GAIN AT 2GHz 0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION AND PLATED HEAT SINK ADVANCED EPITAXIAL DOPING PROFILE	Original	efa480c	PDF
EFA480C-CP083 Contextual Info: Excelics EFA480C-CP083 PRELIMINARY DATA SHEET Low Distortion GaAs Power FET • • • • • • NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE +33.5dBm TYPICAL OUTPUT POWER 16.0dB TYPICAL POWER GAIN AT 2GHz 0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE	Original	efa480c-cp083 160mil	PDF
EFA480C-180F Abstract: 180MIL Contextual Info: Excelics EFA480C-180F PRELIMINARY DATA SHEET Low Distortion GaAs Power FET • • • • • • NON-HERMETIC 180MIL METAL FLANGE PACKAGE +34.0dBm TYPICAL OUTPUT POWER 16.5dB TYPICAL POWER GAIN AT 2GHz 0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION	Original	efa480c-180f 180mil	PDF
EFA480C-CP083 Abstract: fet 721 Contextual Info: EFA480C-CP083 Low Distortion GaAs Power FET UPDATED 12/28/2004 FEATURES • • • • • • NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE +33.5 dBm OUTPUT POWER AT 1dB COMPRESSION 16.0 dB GAIN AT 2 GHz 0.5x4800 MICRON RECESSED “MUSHROOM” GATE	Original	efa480c-cp083 160mil 5x4800 fet 721	PDF
EPA080A-100P Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C Contextual Info: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.	Original	epa080a-100p epa060b-70 epa240bv epa018a +6eic7179-4 microwave gaas fet catalogue emp108-p1 epa160av epa120ev epa480c	PDF
EFA018A Abstract: EPA025A EPA060B-70 EFA240D-SOT89 EPA018A EPA060B EPA018 EPB018A5 CP083 EFA025A-70 Contextual Info: 310 De Guigne Drive, Sunnyvale, CA 94085 Tel: 408-737-1711 Fax: 408-737-1868 Quick Reference Guide for 2 GHz Applications Device Type Bias A Discrete Devices: EPB018A5 EPB018A7 EPB018A9 EPB025A 2V/15mA 2V/15mA 2V/15mA 2V/15mA 15 15 15 15 0.4 0.5 0.6 0.5 20	Original	epb018a5 epb018a7 epb018a9 epb025a +11v/15ma efa018a efa025a epa025a epa060b-70 efa240d-sot89 epa018a epa060b epa018 cp083 efa025a-70	PDF
b1415 Abstract: GAAS FET CROSS REFERENCE gaas fet 70 mil micro-X Package power fet 70 mil micro-X Package EPA240BV N5 micro-X Package EPA060B-70 MIXER EMA 0.5w ,GaAs FET EPA480C-SOT89 Contextual Info: RTC/5/01/PSINTRO EXCELICS SEMICONDUCTOR, INC. PRODUCT SELECTION GUIDE Products Excelics Semiconductor, Inc. was founded in 1995 to become a world wide leading merchant supplier of high performance R.F. and microwave semiconductor discrete devices and integrated circuits ICs	Original	rtc/5/01/psintro 24-hour 200oc 275oc +10b1415 gaas fet cross reference gaas fet 70 mil micro-x package power fet 70 mil micro-x package epa240bv n5 micro-x package epa060b-70 mixer ema 0.5w ,gaas fet epa480c-sot89	PDF
Curtice Abstract: EFA018A EPA030A EPA480C EPA060B EFA040A EFA025A EPA025 220E-12 Excelics EPA018A Contextual Info: Large Signal Model Parameters for Curtice-Cubic Model For Low Distortion GaAs Power FETs Curtice-Ettenburg Model Parameter BETA GAMMA VOUT0 VT0 A0 A1 A2 A3 TAU R1 R2 VB0 VBI RF IS N RDS CRF RD RG RS RIN CGSO CGDO FC CDS CGS CGD KF4 AF TNOM XTI EG VTOTC BETATCE	Original	efa018a 00e-12 40e-14 00e-08 +1263e-13 80e-14 00e-14 efa025a curtice epa030a epa480c epa060b efa040a epa025 220e-12 excelics epa018a	PDF
EPA018A Abstract: EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C Contextual Info: EXCELICS SEMICONDUCTOR, INC. Small Signal Equivalent Circuit Model The small signal model shown below can be useful for extrapolating and interpolating the S-parameters as well as for use in circuit simulators that cannot handle S-parameters directly. The element values are derived by fitting the	Original	epa018a epa025a epa030c epa040a +11epa060a efa480b efa480c efa720a efa960b efa1200a epa060b efa018a excelics epa018a epa480c epa240d	PDF