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EFA025A Datasheets (3)

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Excelics Semiconductor

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
EFA025A		Excelics Semiconductor	6-12V low distortion GaAs power FET	Original	PDF	33.27KB	3
EFA025A-70		Excelics Semiconductor	6-10V low distortion GaAs power FET	Original	PDF	31.63KB	2
EFA025AL		Excelics Semiconductor	8-12V high gain GaAs power FET	Original	PDF	20.85KB	2

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Excelics Semiconductor EFA025A-70 RF LOW DISTORTION GAAS POWER FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	EFA025A-70		245			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Excel Semiconductor EFA025A-70 RF LOW DISTORTION GAAS POWER FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	EFA025A-70		156			1 - 10 - 100 - 1000 - 10000 -	Get Quote

EFA025A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
100MIL Abstract: GaAs FET EFA025A Contextual Info: EFA025A-100P Low Distortion GaAs Power FET UPDATED 11/17/2006 • • • • • • NON-HERMETIC 100MIL METAL FLANGE PACKAGE +21.0dBm TYPICAL OUTPUT POWER 9.5dB TYPICAL POWER GAIN AT 12GHz 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION	Original	efa025a-100p 100mil 12ghz 18ghz +1gaas fet efa025a	PDF
epa025 Abstract: excelics epa025 EFA072A EFA025A excelics w2343 AVANTEK transistor Contextual Info: Hydrogen Test on EFA072A and EFA025A Background It was reported from the field that when EFA072A devices from W234-2 were life tested in hydrogen environment, the Idss of the DUT has increased by 15% or so in a few days. However, when the devices were life tested in open air	Original	efa072a efa025a w234-2 efa072 +8w234-3 48hrs 168hrs epa025 excelics epa025 excelics w2343 avantek transistor	PDF
EFA025AL Contextual Info: EFA025AL High Gain GaAs Power FET FEATURES • • • • • • 420 +20.0dBm TYPICAL OUTPUT POWER 11.5dB TYPICAL POWER GAIN AT 12GHz 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY,	Original	efa025al 12ghz 18ghz	PDF
EFA025A-70 Contextual Info: EFA025A-70 Low Distortion GaAs Power FET UPDATED 04/28/2006 FEATURES • • • • • • • • None-Hermetic Low Cost Ceramic 70mil Package +20.0 dBm Output Power at 1dB Compression 10.0 dB Power Gain at 12GHz 7.0 dB Power Gain at 18GHz Typical 1.50 dB Noise Figure and	Original	efa025a-70 70mil 12ghz 18ghz +1rn/50	PDF
EFA025AL Contextual Info: Excelics EFA025AL DATA SHEET High Gain GaAs Power FET • • • • • • 420 +20.0dBm TYPICAL OUTPUT POWER 11.5dB TYPICAL POWER GAIN AT 12GHz 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY,	Original	efa025al 12ghz 18ghz	PDF
EFA025A Contextual Info: Excelics EFA025A DATA SHEET Low Distortion GaAs Power FET • • • • • • • +21.0dBm TYPICAL OUTPUT POWER 11.0dB TYPICAL POWER GAIN AT 12GHz TYPICAL 1.5 dB NOISE FIGURE AND 10 dB ASSOCIATED GAIN AT 12GHz 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE	Original	efa025a 12ghz 18ghz rn/50	PDF
EFA025A-70 Abstract: EFA025 Contextual Info: Excelics EFA025A-70 DATA SHEET Low Distortion GaAs Power FET 6 6 ' • • • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +20.0dBm TYPICAL OUTPUT POWER 10.0dB TYPICAL POWER GAIN AT 12GHz TYPICAL 1.5dB NOISE FIGURE AND 10dB ASSOCIATED GAIN AT 12GHz	Original	efa025a-70 70mil 12ghz 18ghz +1efa025	PDF
EFA025A Contextual Info: EFA025A Low Distortion GaAs Power FET FEATURES 420 50 • • • • • • • +21.0dBm TYPICAL OUTPUT POWER 11.0dB TYPICAL POWER GAIN AT 12GHz TYPICAL 1.5 dB NOISE FIGURE AND 10 dB ASSOCIATED GAIN AT 12GHz 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE	Original	efa025a 12ghz 18ghz	PDF
EPA080A-100P Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C Contextual Info: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.	Original	epa080a-100p epa060b-70 epa240bv epa018a +6eic7179-4 microwave gaas fet catalogue emp108-p1 epa160av epa120ev epa480c	PDF
EFA018A Abstract: EPA025A EPA060B-70 EFA240D-SOT89 EPA018A EPA060B EPA018 EPB018A5 CP083 EFA025A-70 Contextual Info: 310 De Guigne Drive, Sunnyvale, CA 94085 Tel: 408-737-1711 Fax: 408-737-1868 Quick Reference Guide for 2 GHz Applications Device Type Bias A Discrete Devices: EPB018A5 EPB018A7 EPB018A9 EPB025A 2V/15mA 2V/15mA 2V/15mA 2V/15mA 15 15 15 15 0.4 0.5 0.6 0.5 20	Original	epb018a5 epb018a7 epb018a9 epb025a +11v/15ma efa018a efa025a epa025a epa060b-70 efa240d-sot89 epa018a epa060b epa018 cp083 efa025a-70	PDF
b1415 Abstract: GAAS FET CROSS REFERENCE gaas fet 70 mil micro-X Package power fet 70 mil micro-X Package EPA240BV N5 micro-X Package EPA060B-70 MIXER EMA 0.5w ,GaAs FET EPA480C-SOT89 Contextual Info: RTC/5/01/PSINTRO EXCELICS SEMICONDUCTOR, INC. PRODUCT SELECTION GUIDE Products Excelics Semiconductor, Inc. was founded in 1995 to become a world wide leading merchant supplier of high performance R.F. and microwave semiconductor discrete devices and integrated circuits ICs	Original	rtc/5/01/psintro 24-hour 200oc 275oc +10b1415 gaas fet cross reference gaas fet 70 mil micro-x package power fet 70 mil micro-x package epa240bv n5 micro-x package epa060b-70 mixer ema 0.5w ,gaas fet epa480c-sot89	PDF
Curtice Abstract: EFA018A EPA030A EPA480C EPA060B EFA040A EFA025A EPA025 220E-12 Excelics EPA018A Contextual Info: Large Signal Model Parameters for Curtice-Cubic Model For Low Distortion GaAs Power FETs Curtice-Ettenburg Model Parameter BETA GAMMA VOUT0 VT0 A0 A1 A2 A3 TAU R1 R2 VB0 VBI RF IS N RDS CRF RD RG RS RIN CGSO CGDO FC CDS CGS CGD KF4 AF TNOM XTI EG VTOTC BETATCE	Original	efa018a 00e-12 40e-14 00e-08 +1263e-13 80e-14 00e-14 efa025a curtice epa030a epa480c epa060b efa040a epa025 220e-12 excelics epa018a	PDF
EPA018A Abstract: EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C Contextual Info: EXCELICS SEMICONDUCTOR, INC. Small Signal Equivalent Circuit Model The small signal model shown below can be useful for extrapolating and interpolating the S-parameters as well as for use in circuit simulators that cannot handle S-parameters directly. The element values are derived by fitting the	Original	epa018a epa025a epa030c epa040a +11epa060a efa480b efa480c efa720a efa960b efa1200a epa060b efa018a excelics epa018a epa480c epa240d	PDF