EXCELICS Search Results

Contextual Info: EIC1010A-12 10.0-10.25 GHz 12-Watt Internally Matched Power FET ISSUED: 07/24/2007 Excelics FEATURES • • • • • • .024 EIC1010A-12 .827±.010 .669 10.0-10.25GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +40.5dBm Output Power at 1dB Compression

EIA1414-2P

Abstract: EIB1414-2P
Contextual Info: Excelics EIA/EIB1414-2P PRELIMINARY DATA SHEET 14.0-14.5GHz, 2W Internally Matched Power FET • • • • • • 14.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 30% TYPICAL EIB FEATURES HIGH IP3(46dBm TYPICAL)

EPA240D

Contextual Info: Excelics EPA240D DATA SHEET High Efficiency Heterojunction Power FET • • • • • • 410 +33dBm TYPICAL OUTPUT POWER 20.0 dB TYPICAL POWER GAIN AT 2GHz 0.4 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION

EPA025A-70

Abstract: 0466 1.5 micron
Contextual Info: Excelics EPA025A-70 DATA SHEET High Efficiency Heterojunction Power FET     6 6  '  • • • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +21.5dBm TYPICAL OUTPUT POWER 8.0dB TYPICAL POWER GAIN AT 18GHz TYPICAL 0.85dB NOISE FIGURE AND 11.0dB ASSOCIATED GAIN AT 12GHz

EIA1818-2P

Abstract: EIB1818-2P f1815
Contextual Info: Excelics EIA/EIB1818-2P PRELIMINARY DATA SHEET 18.15-18.75GHz, 2W Internally Matched Power FET • • • • • • 18.15-18.75GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 25% TYPICAL EIB FEATURES HIGH IP3(46dBm TYPICAL)

EIA1718-2P

Abstract: EIB1718-2P
Contextual Info: Excelics EIA/EIB1718-2P PRELIMINARY DATA SHEET 17.7-18.7GHz, 2W Internally Matched Power FET • • • • • • 17.7-18.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 25% TYPICAL EIB FEATURES HIGH IP3(46dBm TYPICAL)

EPA240D-SOT89

Abstract: EPA240D EPA240
Contextual Info: Excelics EPA240D-SOT89 DATA SHEET DC-6GHz High Efficiency Heterojunction Power FET Features    '5$,1 6285&      (Top View All Dimensions In Mils Applications • • •  $ &# *$7( • • • LOW COST SURFACE-MOUNT PLASTIC PACKAGE

513 s12 datasheet

Abstract: EPA060BV EPA060B
Contextual Info: Excelics EPA060B/EPA060BV DATA SHEET High Efficiency Heterojunction Power FET  • • • • • • • •  +26.5dBm TYPICAL OUTPUT POWER 10.0dB TYPICAL POWER GAIN FOR EPA060B AND 11.5dB FOR EPA060BV AT 18GHz 0.4dB TYPICAL NOISE FIGURE AT 2GHz 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE

EIA1415-4P

Abstract: EIB1415-4P
Contextual Info: Excelics EIA/EIB1415-4P PRELIMINARY DATA SHEET 14.40-15.35GHz, 4W Internally Matched Power FET • • • • • • 14.40-15.35GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 27% TYPICAL EIB FEATURES HIGH IP3(49dBm TYPICAL)

EIA1011-4P

Abstract: EIB1011-4P
Contextual Info: Excelics EIA/EIB1011-4P PRELIMINARY DATA SHEET 10.7-11.7GHz, 4W Internally Matched Power FET • • • • • • 10.7-11.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 30% TYPICAL EIB FEATURES HIGH IP3(49dBm TYPICAL)

LM79GCP

Abstract: EIA1819-2P EIB1819-2P
Contextual Info: Excelics EIA/EIB1819-2P PRELIMINARY DATA SHEET 18.7-19.7GHz, 2W Internally Matched Power FET • • • • • • 18.7-19.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 25% TYPICAL EIB FEATURES HIGH IP3(46dBm TYPICAL)

EPA040A

Contextual Info: Excelics EPA040A DATA SHEET High Efficiency Heterojunction Power FET • • • • • • +24.5dBm TYPICAL OUTPUT POWER 11.0dB TYPICAL POWER GAIN AT 18GHz 0.3 X 400 MICRON RECESSED “ MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION

EFC060B

Contextual Info: Excelics EFC060B PRELIMINARY DATA SHEET Low Distortion GaAs Power FET • • • • • • • +25.0dBm TYPICAL OUTPUT POWER 10.5dB TYPICAL POWER GAIN AT 12GHz HIGH BVgd FOR 10V BIAS 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE

EFA240B-100F

Contextual Info: Excelics EFA240B-100F DATA SHEET Low Distortion GaAs Power FET '  7<3   7<3  All Dimensions In mils ELECTRICAL CHARACTERISTICS Ta = 25 OC SYMBOLS P1dB G1dB PAE PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression Vds=8V, Ids=50% Idss Gain at 1dB Compression

EFA480C-SOT89

Contextual Info: Excelics EFA480C-SOT89 DATA SHEET DC-4GHz Low Distortion GaAs Power FET Features     '5$,1 6285&     (Top View All Dimensions In Mils Applications • •  $ &# *$7( • • • LOW COST SURFACE-MOUNT PLASTIC PACKAGE

EFA040A-70

Abstract: PT 1132
Contextual Info: Excelics EFA040A-70 DATA SHEET Low Distortion GaAs Power FET 44 19 4 20 S S 70 D 40 NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +22.0dBm TYPICAL OUTPUT POWER 8.0dB TYPICAL POWER GAIN AT 12GHz 0.3 X 400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION

EIA1213-2P

Abstract: EIB1213-2P
Contextual Info: Excelics EIA/EIB1213-2P PRELIMINARY DATA SHEET 12.75-13.25GHz, 2W Internally Matched Power FET • • • • • • 12.75-13.25GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 30% TYPICAL EIB FEATURES HIGH IP3(46dBm TYPICAL)

EIA1718-1P

Abstract: EIB1718-1P
Contextual Info: Excelics EIA/EIB1718-1P PRELIMINARY DATA SHEET 17.7-18.7GHz, 1W Internally Matched Power FET • • • • • • 17.7-18.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 25% TYPICAL EIB FEATURES HIGH IP3(43dBm TYPICAL)

EFA080A-70

Contextual Info: Excelics EFA080A-70 DATA SHEET Low Distortion GaAs Power FET 44 19 4 20 S S 70 D 40 NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +23.5dBm TYPICAL OUTPUT POWER 7.0 dB TYPICAL POWER GAIN AT 12GHz 0.3 X 800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION

Contextual Info: EIC5972-4 5.90-7.20 GHz 10-Watt Internally Matched Power FET UPDATED 11/10/2006 FEATURES • • • • • • • • Excelics 5.90– 7.20GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1dB Compression 9.0 dB Power Gain at 1dB Compression

15284

Abstract: EMA406C
Contextual Info: Excelics EMA406C TENTATIVE DATA SHEET 26 - 32 GHz Low Noise MMIC FEATURES • • • • • • • • 26 -32 GHz BANDWIDTH +20.0 dBm TYPICAL OUTPUT POWER 21 dB ± 1.5 dB TYPICAL POWER GAIN FOUR SECTION, DISTRIBUTED AMPLIFIER DUAL BIAS SUPPLY 0.3 MICRON RECESSED “MUSHROOM” GATE

EMA501D

Abstract: IDSS-30 8582
Contextual Info: Excelics EMA501D TENTATIVE DATA SHEET 36 - 40 GHz Medium Power MMIC FEATURES • • • • • • • 36 -40 GHz BANDWIDTH +21 dBm OUTPUT POWER @1dB Gain Compression 23 dB TYPICAL POWER GAIN DUAL BIAS SUPPLY 0.3 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION

Contextual Info: EIC2224-15 2.20 – 2.40 GHz 15W Internally Matched Power FET ISSUED 04/04/2006 2X 0.079 MIN 4X 0.102 FEATURES • • • • • • • Excelics EIC2224-15 2.20– 2.40GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +42.5 dBm Output Power at 1dB Compression

EIC7179-10

Contextual Info: EIC7179-10 7.10-7.90 GHz 10-Watt Internally Matched Power FET ISSUED DATE: 01/30/2008 FEATURES • • • • • • • • Excelics 7.10-7.90GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +40.5 dBm Output Power at 1dB Compression 8.5 dB Power Gain at 1dB Compression