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Skyworks Solutions Inc 545DBC622M080BCGR Standard Clock Oscillators Single Freq ULJ XO,OE P1/2,0.2-1500MHz
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	545DBC622M080BCGR					1 - 10 - 100 - 1000 $21.96 10000 $21.96	Get Quote
Richardson RFPD	545DBC622M080BCGR				1,000	1 - 10 - 100 $24.59 1000 $24.59 10000 $24.59	Buy Now
Skyworks Solutions Inc 545DBC622M080BCG Standard Clock Oscillators Single Freq ULJ XO,OE P1/2,0.2-1500MHz
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	545DBC622M080BCG					1 - 10 - 100 $22.74 1000 $22.74 10000 $22.74	Get Quote
Richardson RFPD	545DBC622M080BCG				50	1 - 10 - 100 $24.59 1000 $24.59 10000 $24.59	Buy Now
Panasonic Electronic Components ERA-3AEB8450V Thin Film Resistors - SMD 0603 845ohm 0.1% 25ppm
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TTI	ERA-3AEB8450V	Reel			5,000	1 - 10 - 100 - 1000 - 10000 $0.04	Buy Now
NXP Semiconductors 74HC245DB/C,118 Bus Transceiver, HC/UH Series, 1-Func, 8-Bit, True Output, CMOS, SSOP20
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	74HC245DB/C,118		1,000		1	1 - 10 - 100 $0.48 1000 $0.40 10000 $0.35	Buy Now

45DBC Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
POUT315 Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-16SL-081 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • ■ LOW INTERMODULATION DISTORTION HIGH GAIN IM3=-45dBc a t Po=31.5dBm GldB=8.0dB at 5.9GHz to 6.4GHz Single C arrier Level BROAD BAND INTERNALLY MATCHED	OCR Scan	-45dBc TIM5964-16SL-081 2-16G1B) POUT315	PDF
Contextual Info: EIM1011-4 10.7 – 11.7GHz Multi-Stage Power Amplifier UPDATED: 01/15/2008 FEATURES • • • • • 10.7– 11.7GHz Operating Frequency Range 35.5dBm Output Power @1dB Compression 27.0 dB Typical Power Gain @1dB gain compression -45dBc Typical OIM3 @each tone Pout 22dBm	Original	EIM1011-4 -45dBc 22dBm	PDF
Contextual Info: FLM3135-8F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.5dBm Typ. High Gain: G1dB = 11.0dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -45dBc@Po = 28.5dBm Broad Band: 3.1 ~ 3.5GHz Impedance Matched Zin/Zout = 50Ω	Original	FLM3135-8F -45dBc FLM3135-8F 25hods	PDF
Contextual Info: FLM7185-12F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.0dBm Typ. High Gain: G1dB = 8.0dB (Typ.) High PAE: ηadd = 30% (Typ.) Low IM3 = -45dBc@Po = 30.0dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Ω	Original	FLM7185-12F -45dBc FLM7185-12F	PDF
Contextual Info: FLM1011-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω	Original	FLM1011-6F -45dBc 25dBm FLM1011-6F	PDF
Contextual Info: FLM1314-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.0dBm Typ. High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 23% (Typ.) Low IM3 = -45dBc@Po = 29.0dBm Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω	Original	FLM1314-12F -45dBc FLM1314-12F 25hods	PDF
Contextual Info: FLM5972-4F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 36% (Typ.) Low IM3 = -45dBc@Po = 25.5dBm Broad Band: 5.9 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω	Original	FLM5972-4F -45dBc FLM5972-4F	PDF
Contextual Info: FLM3742-25DA F, ¿¡U-,. r UJ11jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idB = 44dBm Typ. High Gain: G ^ b = 10.5dB (Typ.) High PAE: r iadd = 36% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 3.7 ~ 4.2GHz	OCR Scan	FLM3742-25DA UJ11jU 44dBm -45dBc 32dBm	PDF
Contextual Info: FLM1213-6F X, Ku-Band Internally Matched FET FEATURES • High Output Power: P ^ b = 37.5dBm Typ. • High Gain: G ^ b = 7.0dB (Typ.) • High PAE: r!add = 27% (Typ.) • Low IM3 = -45dBc@Po = 25dBm • Broad Band: 12.7 ~ 13.2GHz • Impedance Matched Zin/Zout = 50Q	OCR Scan	FLM1213-6F -45dBc 25dBm FLM1213-6F FCSI0598M200	PDF
Contextual Info: FLM1213-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 40.5dBm Typ. High Gain: G ^ b = 5.5dB (Typ.) High PAE: r!add = 24% (Typ.) IM3 = -45dBc@Po = 28dBm Broad Band: 12.7 ~ 13.2GHz Impedance Matched Zin/Zout = 50Q	OCR Scan	FLM1213-12F -45dBc 28dBm FLM1213-12F FCSI0598M200	PDF
TIM5964-35SLA Contextual Info: TOSHIBA MICROWAVE POWER G aAs FET M ICRO W AVE SEM IC O N D U C TO R TIM5964-35SLA TECHNICAL DATA a FEATURES : HIGH EFFICIENCY • LOW INTERMODULATION DISTORTION T add = 39% at 5.9 to 6.4GHz IM3 = -45dBc at Po = 35.0dBm ■ HIGH POWER HIGH GAIN GldB = 9.0 dB at 5.9 to 6.4GHz	OCR Scan	TIM5964-35SLA -45dBc TIM5964-35SLA	PDF
Contextual Info: F, . FLM5964-18DA r UJ11 jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 42.5dBm Typ. High Gain: G ^ b = 8.5dB (Typ.) High PAE: r!add = 31% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 5.9 ~ 6.4GHz	OCR Scan	FLM5964-18DA -45dBc 5964-18D Drain-40	PDF
5964-6D Contextual Info: F, . FLM5964-6D r UJ11 jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 38.0dBm Typ. High Gain: G ^ b = 10.0ÒB (Typ.) High PAE: r!add = 36% (Typ.) Low IM3 = -45dBc@Po = 27dBm Broad Band: 5.9 ~ 6.4GHz	OCR Scan	FLM5964-6D -45dBc 27dBm 5964-6D	PDF
Contextual Info: FLM5972-8F C-Band Internally Matched FET FEATURES • High Output Power: P ^ b = 39.0dBm Typ. • High Gain: G ^ b = 8.5dB (Typ.) • High PAE: riadd = 31% (Typ.) • Low IM3 = -45dBc@Po = 28.0dBm • Broad Band: 5.9 ~ 7.2GHz • Impedance Matched Zin/Zout = 50Q	OCR Scan	FLM5972-8F -45dBc FLM5972-8F FCSI0599M200	PDF

FLM1011-6F Contextual Info: FLM1011-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω	Original	FLM1011-6F -45dBc 25dBm FLM1011-6F V4888	PDF
FLM5964 Contextual Info: n FLM5964-8D Internally Matched Power GaAs F E Ts . I FEATURES • High Output Power: P-idg = 39.0dBm Typ. • High Gain: G -j^B = 8.0dB (Typ.) • High PAE: r iadd = 30% (Typ.) • Low IM 3 = -45dBc@Po = 28dBm • Broad Band: 5.9 ~ 6.4GHz • Impedance Matched Zin/Zout = 50Q	OCR Scan	FLM5964-8D -45dBc 28dBm FLM5964-8D FLM5964	PDF
FLM5964-18DA Abstract: 5964-18DA 5964-18D Contextual Info: FLM5964-18DA F\| if m - i • I Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G -j^B = 8.5dB (Typ.) High PAE: r iadd = 31% (Typ.) Low IM 3 = -45dBc@Po = 31.5dBm Broad Band: 5.9 ~ 6.4GHz	OCR Scan	FLM5964-18DA -45dBc 5964-18D FLM5964-18DA 5964-18DA	PDF
Contextual Info: F\| .fjW-,. J FLM4450-4E Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 36dBm Typ. High Gain: G-j^B = 11dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q	OCR Scan	FLM4450-4E 36dBm -45dBc 25dBm 4450-4E	PDF
Contextual Info: FLM6472-35DA F\| r U J Il j U Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 45.5dBm Typ. High Gain: G-j^B = 6.0dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 34.5dBm Broad Band: 6.4 ~ 7.2GHz	OCR Scan	FLM6472-35DA -45dBc FLM6472-35DA	PDF
FLM4450-25D Abstract: FUJI GaAs FET 25Q 328 FLM4450-25DA Contextual Info: n FLM4450-25DA Internally Matched Power GaAs F E Ts . I FEATURES • • • • • • • High Output Power: P-idg = 44dBm Typ. High Gain: G-j^B = 9.5dB (Typ.) High PAE: riadd = 35% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q	OCR Scan	FLM4450-25DA 44dBm -45dBc 32dBm FLM4450-25DA FLM4450-25D FUJI GaAs FET 25Q 328	PDF
FLM5972-4F Contextual Info: FLM5972-4F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 36% (Typ.) Low IM3 = -45dBc@Po = 25.5dBm Broad Band: 5.9 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω	Original	FLM5972-4F -45dBc FLM5972-4F	PDF
FLM1213-6F Contextual Info: FLM1213-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.0dB (Typ.) High PAE: ηadd = 27% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 12.7 ~ 13.2GHz Impedance Matched Zin/Zout = 50Ω	Original	FLM1213-6F -45dBc 25dBm FLM1213-6F V4888	PDF
U/25/20/TN26/15/850/FLM6472-18DA Contextual Info: FLM6472-18DA F\| I Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G-j^B = 7.0dB (Typ.) High PAE: riadd = 30% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q	OCR Scan	FLM6472-18DA -45dBc FLM6472-18DA VD-164 U/25/20/TN26/15/850/FLM6472-18DA	PDF
FLM7177-18DA Abstract: T-34038 Contextual Info: FLM7177-18DA Fuffrsu Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G-j^B = 7.5dB (Typ.) High PAE: r iadd = 30% (Typ.) Low IM3 = -45dBc@Po = 3 1 .5dBm Broad Band: 7.1 ~ 7.7GHz Impedance Matched Zin/Zout = 50Q	OCR Scan	FLM7177-18DA -45dBc FLM7177-18DA Symbo474 T-34038	PDF

45DBC Search Results

45DBC Price and Stock

Skyworks Solutions Inc 545DBC622M080BCGR

Skyworks Solutions Inc 545DBC622M080BCG

Panasonic Electronic Components ERA-3AEB8450V

NXP Semiconductors 74HC245DB/C,118

45DBC Datasheets Context Search

POUT315

TIM5964-35SLA

5964-6D

FLM1011-6F

FLM5964

FLM5964-18DA

FLM4450-25D

FLM5972-4F

FLM1213-6F

U/25/20/TN26/15/850/FLM6472-18DA

FLM7177-18DA