90GHZ Search Results

microwave transceiver

Abstract: abstract for wireless communication system loop gain of Colpitts VCO design 5ghz microwave transceiver 3.5 GHz microwave transceiver sensitivity loop gain of Colpitts VCO design 4 ghz 0.18 um CMOS Spiral Inductor technology bjt microwave GHz Drive Base BJT 5.8 ghz Transceiver IC
Contextual Info: The Impact of SiGe BiCMOS Technology on Microwave Circuits and Systems Mehmet Soyuer IBM T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598 E-mail: soyuer@us.ibm.com Abstract This paper focuses on low power and high integration capabilities of SiGe BiCMOS

1S553T

Abstract: 1SV54 1S553T-HP 1SV56 60Ghz 1S1923 1S1924 1S361 1S362 1S363
Contextual Info: & ñ * m fê S T P R fiS Ä p Vrm Vr C t ,C j * p F % tt « On*) (V) (V) PA PA PA PA AFC 200 200 200 200 Mul Mul 1W If 200 it Mul Mul Mul 1S1922 1S1923 1S1924 1S2094 1S2139—A £t B & trB & frB & AFC APC AFC 1S2139-B 1S2139-C 1S2339 Ì *r H m 1S2790 1SV29

1S553T

Abstract: 60Ghz 1S1923 1S1924 1S361 1S362 1S363 1S553T-HP 1S766 1S767
Contextual Info: & ñ * m fê S T P R fiS Ä p Vrm Vr C t ,C j * p F % tt « On*) (V) (V) PA PA PA PA AFC 200 200 200 200 Mul Mul 1W If 200 it Mul Mul Mul 1S1922 1S1923 1S1924 1S2094 1S2139—A £t B & trB & frB & AFC APC AFC 1S2139-B 1S2139-C 1S2339 Ì *r H m 1S2790 1SV29

1S553T

Abstract: 1S553 1S1923 1S1924 1S361 1S362 1S363 1S553T-HP 1S766 1S767
Contextual Info: & 1S362 1S363 1S553T-HP tt « 1S2139-B 1S2139-C 1S2339 1S2790 1SV29 isno 1SV31 1SV32 1SV33 1SY49 1SV52 1SV53-A 1SV53-B 1SV54 1SY54-G 1SV56 1SV57 1SV71 1SV72 1SV73 1SV74 1SV89 1SV100 1SV101 1SV102 1SV103 3SV114 1SV123 1SV124 1SV125 Vrm Vr C t ,C j * p F

Contextual Info: Advance Information: AI1115 80-105GHz Balanced Low Noise Amplifier GaAs Monolithic Microwave IC IN OUT UMS develops a balanced, four-stage, low noise monolithic amplifier which operates between 80 and 105GHz. This broadband amplifier delivers 16dB linear gain average from

SMK 0465

Abstract: smk 0965 TZ 1148 smk 0460 2SC4713K CRG16G GRM36 GRM40 NJG1701V NJU7663R
Contextual Info: NJG1701V P H S f f l G f ë û i t a A s I C •ss $ m N J G 1 7 0 1 v ttftW K T O . W - 7 'S J * ff if A Ä Ä O Ä S flK O U * * . * * y * . tëS ÉW> £ Î § £ i k b ; t P H S fflW G a A s MM I C T t . s s o p 2 o a y *r- w & m ic ¿ y , g H fc o S jR E W Â T * * * .

1S553T

Abstract: 1SV125 1SV89 1S553T-HP 1SV74 60Ghz 1S1923 1S1924 1S361 1S362
Contextual Info: ñ & tt « Vrm Vr On* V) (V) PA PA PA PA AFC 200 200 200 200 1W it Mul Mul Mul Mul Mul 1S1922 1S1923 1S1924 1S2094 1S2139—A £t B & trB & frB & AFC APC AFC frB fä AFC AFC 1S2139-B 1S2139-C 1S2339 Ì *r H m 1S2790 1SV29 am 1S362 1S363 1S553T-HP a am

1S553T

Abstract: 60Ghz 1S1923 1S1924 1S361 1S362 1S363 1S553T-HP 1S766 1S767
Contextual Info: & ñ * m fê S T P R fiS Ä p Vrm Vr C t ,C j * p F % tt « On*) (V) (V) PA PA PA PA AFC 200 200 200 200 Mul Mul 1W If 200 it Mul Mul Mul 1S1922 1S1923 1S1924 1S2094 1S2139—A £t B & trB & frB & AFC APC AFC 1S2139-B 1S2139-C 1S2339 Ì *r H m 1S2790 1SV29

MGF1502

Abstract: MGF1412 MGF1601 mgf2116 MGF1802 MGF2124 MGF1404 MGF1405 MGF1902 MGF1501
Contextual Info: - 152 - m. MGF14Q3 MGF1404 MGF1405 MGF1412 MGF1413 MGF1414 MGF1423 MGF1425 MGF1501 MGF1502 MGF1601 MGF1801 MGF1802 MGF1902 MGFÎ903 MGF1904 MGF2116 MGF2117 MGF2124 MGF2124F MGF2124G MGF2148 MGF2148F MGF2148G MGF2172 MGF2205 MGF2407 MGF2407A MGF2415 MGF2415A

Contextual Info: High performance aerospace and defense solutions Introduction NXP Semiconductors has been a trusted source and a leading provider of components to the Aerospace and Defense market for over 30 years. NXP’s components are applied in a wide array of Aerospace and Defense systems including Radar, SDR Software Defined Radio , ECM (Electronic Countermeasures) and

Contextual Info: GaAs & GaN Build your own solution with UMS FOUNDRY SERVICES UMS has developed a proven family of III-V based processes for high performance low noise and high power MMICs. These processes are extensively used by foundry customers and by UMS to offer MMIC solutions for the Defence,

1S553T

Abstract: 1S2339 1S553T-HP 60Ghz 1S1923 1S1924 1S361 1S362 1S363 1S766
Contextual Info: & ñ * m fê S T P R fiS Ä p Vrm Vr C t ,C j * p F % tt « On*) (V) (V) PA PA PA PA AFC 200 200 200 200 Mul Mul 1W If 200 it Mul Mul Mul 1S1922 1S1923 1S1924 1S2094 1S2139—A £t B & trB & frB & AFC APC AFC 1S2139-B 1S2139-C 1S2339 Ì *r H m 1S2790 1SV29

1S553T-HP

Abstract: is2339 1S553T IS2790 1S362 1SV89 60Ghz 1S1923 1S1924 1S361
Contextual Info: & ñ * m fê S T P R fiS Ä p Vrm Vr C t ,C j * p F % tt « On*) (V) (V) PA PA PA PA AFC 200 200 200 200 Mul Mul 1W If 200 it Mul Mul Mul 1S1922 1S1923 1S1924 1S2094 1S2139—A £t B & trB & frB & AFC APC AFC 1S2139-B 1S2139-C 1S2339 Ì *r H m 1S2790 1SV29

1S553T-HP

Abstract: 1SV74 1S553T 1SV49 1S1923 1S1924 1S361 1S362 1S2139-B 1S766
Contextual Info: & ñ * m fê S T P R fiS Ä p Vrm Vr C t ,C j * p F % tt « On*) (V) (V) PA PA PA PA AFC 200 200 200 200 Mul Mul 1W If 200 it Mul Mul Mul 1S1922 1S1923 1S1924 1S2094 1S2139—A £t B & trB & frB & AFC APC AFC 1S2139-B 1S2139-C 1S2339 Ì *r H m 1S2790 1SV29

qubic4

Contextual Info: Philips Semiconductors Building on its successful QUBiC3 process that set new standards in high-speed performance, improved functionality and lower price, Philips Semiconductors has made a radically new state-of-the-art advanced BiCMOS process available for building all-silicon RF ICs

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

inp hemt power amplifier

Abstract: NS 2P N218 94GHz 100ghz MMIC POWER AMPLIFIER hemt 94GHz amplifier CI0402 N218
Contextual Info: NS 2P N218 CI0402 17 Aug. 2004 Preliminary 78 GHz – 100 GHz High - Power Amplifier Features Wideband operation: 78 GHz – 100 GHz Pout = 17 dBm typ, Pin = 5 dBm P(-1dB) = 11 dBm (typ) Linear Gain: 14 – 23 dB Linear Gain Control Range: 10 dB WR-10 Waveguide Interface

2sk270

Abstract: 2SJ96 2SK272 2SJ92 2SK260 2SK286 2SK247 2SK389 2SJ91 2SK261
Contextual Info: - 40 - 41 - % m tí & Ta=25'C u Cis (typ) (p F) Crs (typ) (pF) Vg s (V) typ max dB dB Vd s (V) f (Hz) Re <Q) R d s (ON) (max) Vg s (V) (0) •£ <D f& fé '14 Id (A) m £ & yfu 5* & m n m 10 82B SDG 2SK24G 7. 5 5 105A SDG 2SK247 800 -5 10 1.12 15 4 28A GDS

HBT 01 - 05

Abstract: dr 25 germanium diode HBT 01 05G Silicon germanium Heterojunction Bipolar Transistor GERMANIUM SMALL SIGNAL TRANSISTORS poly silicon resistor 1lm2 0.18 um CMOS parameters hbt 05 HBT 01 - 01 G
Contextual Info: A 0.18lm 90 GHz fT SiGe HBT BiCMOS, ASIC-Compatible, Copper Interconnect Technology for RF and Microwave Applications G. Freeman, D. Ahlgren, D.R. Greenberg*, R. Groves, F. Huang, G. Hugo, B. Jagannathan, S.J. Jeng, J. Johnson*, K. Schonenberg*, K. Stein, R. Volant, S. Subbanna

1SV49

Abstract: 1S553T 1S553T-HP 1SV124 60Ghz 1S1923 1S1924 1S361 1S362 1S363
Contextual Info: & ñ * m fê S T P R fiS Ä p Vrm Vr C t ,C j * p F % tt « On*) (V) (V) PA PA PA PA AFC 200 200 200 200 Mul Mul 1W If 200 it Mul Mul Mul 1S1922 1S1923 1S1924 1S2094 1S2139—A £t B & trB & frB & AFC APC AFC 1S2139-B 1S2139-C 1S2339 Ì *r H m 1S2790 1SV29

1S553T-HP

Abstract: 1SV124 IS2790 1SV53-A 1SV89 1SV53 1S553T 1SV73 1SV74 1SV125
Contextual Info: & ñ * m fê S T P R fiS Ä p Vrm Vr C t ,C j * p F % tt « On*) (V) (V) PA PA PA PA AFC 200 200 200 200 Mul Mul 1W If 200 it Mul Mul Mul 1S1922 1S1923 1S1924 1S2094 1S2139—A £t B & trB & frB & AFC APC AFC 1S2139-B 1S2139-C 1S2339 Ì *r H m 1S2790 1SV29

1S553T

Abstract: 1s553 1S1923 1S1924 1S361 1S362 1S363 1S553T-HP 1S766 1S767
Contextual Info: & ñ * m fê S T P R fiS Ä p Vrm Vr C t ,C j * p F % tt « On*) (V) (V) PA PA PA PA AFC 200 200 200 200 Mul Mul 1W If 200 it Mul Mul Mul 1S1922 1S1923 1S1924 1S2094 1S2139—A £t B & trB & frB & AFC APC AFC 1S2139-B 1S2139-C 1S2339 Ì *r H m 1S2790 1SV29

1S553T

Abstract: 60Ghz 1S1923 1S1924 1S361 1S362 1S363 1S553T-HP 1S766 1S767
Contextual Info: Vrm Vr C t ,C j * p F % tt « On*) (V) (V) PA PA PA PA AFC 200 200 200 200 Mul Mul 1W If 200 it Mul Mul Mul 1S1922 1S1923 1S1924 1S2094 1S2139—A £t B & trB & frB & AFC APC AFC 1S2139-B 1S2139-C 1S2339 Ì *r H m 1S2790 1SV29 am 1S360 1S361 1S362 1S363

inp hemt power amplifier

Abstract: 100ghz MMIC POWER AMPLIFIER hemt 94GHz
Contextual Info: EL07-292-601-008 CI0621 May 2007 Preliminary 88 GHz – 105 GHz High - Power Amplifier Features Wideband operation: 88 GHz – 105 GHz Pout = 18 dBm typ, Pin = 5 dBm P(-1dB) = 12 dBm (typ) Linear Gain: 17 – 20 dB Linear Gain Control Range: 8 dB WR-10 Waveguide Interface