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    TE Connectivity

    TE Connectivity LP800-2500-9-NF

    Antennas Dir,LogPer,18in,NF
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    105GHZ Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Advance Information: AI1115 80-105GHz Balanced Low Noise Amplifier GaAs Monolithic Microwave IC IN OUT UMS develops a balanced, four-stage, low noise monolithic amplifier which operates between 80 and 105GHz. This broadband amplifier delivers 16dB linear gain average from


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    ai111580-105ghz105ghz90ghz+3100ghzv/115masubstr69 PDF

    Contextual Info: CHA1008-99F 80-105GHz Balanced Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA1008-99F is a broadband, balanced, four-stage monolithic low noise amplifier. It is designed for Millimeter-Wave Imaging applications and can be use in commercial


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    cha1008-99f80-105ghz90ghz115ma+1dscha10082128 PDF

    inp hemt power amplifier

    Abstract: 100ghz MMIC POWER AMPLIFIER hemt 94GHz
    Contextual Info: EL07-292-601-008 CI0621 May 2007 Preliminary 88 GHz – 105 GHz High - Power Amplifier Features Wideband operation: 88 GHz – 105 GHz Pout = 18 dBm typ, Pin = 5 dBm P(-1dB) = 12 dBm (typ) Linear Gain: 17 – 20 dB Linear Gain Control Range: 8 dB WR-10 Waveguide Interface


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    el07-292-601-008ci0621wr-10inp hemt power amplifier+2100ghz mmic power amplifier hemt94ghz PDF

    GaAs HEMTs X band

    Abstract: X-band Gan Hemt 0.18um AlGaN/GaN HEMTs x-band mmic lna alcon X-band diode gp 421 LNA x-band
    Contextual Info: High Linearity, Robust, AlGaN-GaN HEMTs for LNA & Receiver ICs P. Parikh, Y. Wu, M. Moore, P. Chavarkar, U. Mishra, Cree Lighting Company, 340 Storke Road, Goleta, CA 93117. R. Neidhard, L. Kehias, T. Jenkins, Air Force Research Laboratory, Sensors Directorate, WPAFB, OH 45433.


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    gaas hemts x bandx-band gan hemt0.18umalgan/gan hemts+5x-band mmic lnaalconx-banddiode gp 421lna x-band PDF