1SV29 Search Results

smd transistor marking 26

Abstract: smd transistor 26 1SV293 marking TH
Contextual Info: Diodes SMD Type Silicon Epitaxial Planar Diode 1SV293 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features Ultra Low Series Resistance: rs = 0.26 Typ. +0.1 2.6-0.1 1.0max Useful for small size Set 0.375 +0.05 0.1-0.02 0.475

1SV290B

Contextual Info: 1SV290B TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV290B CATV Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 16 typ. • Low series resistance: rs = 0.92 Ω (typ.) • Excellent C-V characteristics, and small tracking error.

1SV291

Abstract: C25V
Contextual Info: 1SV291 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE UHF SHF TUNING SILICON EPITAXIAL PLANAR TYPE 1 S V2 9 1 Unit in mm • High Capacitance Ratio : C2 y /C 2 5 Y = 7.6 TYP. • Low Series Resistance : rs = 1.90 (TYP.) • Excellent C-V Characteristics, and Small Tracking Error.

Contextual Info: TO SHIBA 1SV291 TOSHIBA VARIABLE CAPACITANCE DIODE 1 SV291 UHF SHF TUNING • • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C2 v / C 2 5 V = 7-6 TYP. Low Series Resistance : rs = 1.9fl (TYP.) Excellent C-V Characteristics, and Small Tracking Error.

1SV293

Contextual Info: TOSHIBA 1SV293 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV2 9 3 VCO FOR UHF BAND RADIO U nit in mm • Ultra Low Series Resistance : rg = 0 .2 6 0 Typ. • Useful for Small Size Set MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL

toshiba SO 41

Abstract: 1SV290 C25V
Contextual Info: 1SV290 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV290 Unit in mm CATV TUNING • High Capacitance Ratio : C2V/C25V = 16 TYP. • Low Series Resistance : rs = 0.920 (TYP.) • Excellent C-V Characteristics, and Small Tracking Error.

YU MARKING diode

Contextual Info: TO SH IB A 1SV293 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V293 VCO FOR UHF BAND RADIO Unit in mm ELECTRICAL CHARACTERISTICS Ta = 25°C CHARACTERISTIC Reverse Voltage Reverse Current Capacitance Capacitance Capacitance Ratio Series Resistance

1S553T

Abstract: 1SV54 1S553T-HP 1SV56 60Ghz 1S1923 1S1924 1S361 1S362 1S363
Contextual Info: & ñ * m fê S T P R fiS Ä p Vrm Vr C t ,C j * p F % tt « On*) (V) (V) PA PA PA PA AFC 200 200 200 200 Mul Mul 1W If 200 it Mul Mul Mul 1S1922 1S1923 1S1924 1S2094 1S2139—A £t B & trB & frB & AFC APC AFC 1S2139-B 1S2139-C 1S2339 Ì *r H m 1S2790 1SV29

1S553T

Abstract: 60Ghz 1S1923 1S1924 1S361 1S362 1S363 1S553T-HP 1S766 1S767
Contextual Info: & ñ * m fê S T P R fiS Ä p Vrm Vr C t ,C j * p F % tt « On*) (V) (V) PA PA PA PA AFC 200 200 200 200 Mul Mul 1W If 200 it Mul Mul Mul 1S1922 1S1923 1S1924 1S2094 1S2139—A £t B & trB & frB & AFC APC AFC 1S2139-B 1S2139-C 1S2339 Ì *r H m 1S2790 1SV29

1S553T

Abstract: 1S553 1S1923 1S1924 1S361 1S362 1S363 1S553T-HP 1S766 1S767
Contextual Info: & 1S362 1S363 1S553T-HP tt « 1S2139-B 1S2139-C 1S2339 1S2790 1SV29 isno 1SV31 1SV32 1SV33 1SY49 1SV52 1SV53-A 1SV53-B 1SV54 1SY54-G 1SV56 1SV57 1SV71 1SV72 1SV73 1SV74 1SV89 1SV100 1SV101 1SV102 1SV103 3SV114 1SV123 1SV124 1SV125 Vrm Vr C t ,C j * p F

1SV290

Contextual Info: 1SV290 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV290 CATV Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 16 typ. • Low series resistance: rs = 0.92 Ω (typ.) • Excellent C-V characteristics, and small tracking error.

1SV291

Abstract: C25V
Contextual Info: 1SV291 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV291 Unit in mm UHF SHF TUNING • High Capacitance Ratio : C2 V /C 2 5 V = 7.6 TYP. • Low Series Resistance : rs = 1.90 (TYP.) • Excellent C-V Characteristics, and Small Tracking Error.

1SV290

Contextual Info: 1SV290 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV290 CATV Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 16 typ. · Low series resistance: rs = 0.92 Ω (typ.) · Excellent C-V characteristics, and small tracking error.

1SV290

Contextual Info: 1SV290 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV290 CATV Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 16 typ. • Low series resistance: rs = 0.92 Ω (typ.) • Excellent C-V characteristics, and small tracking error.

TA-2415

Abstract: 1SV294
Contextual Info: 注文コード No. N 5 1 3 6 A 1SV294 No. N 5 1 3 6 A 60500 半導体ニューズ No.5136 とさしかえてください。 1SV294 特長 シリコンエピタキシァル PIN 形ダイオード 可変抵抗減衰器用 ・小型外形のため高密度実装および小形設計が可能である。

Contextual Info: 1SV291 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV291 UHF SHF Tuning Unit: mm • High capacitance ratio: C2 V/C25 V = 7.6 typ. • Low series resistance: rs = 1.9 Ω (typ.) • Excellent C-V characteristics, and small tracking error.

1SV290

Contextual Info: 20010110 1SV290 SPICE PARAMETER SPICE MODEL: BERKLEY SPICE2G6 DIODE MODEL DATA FORMAT: MODEL FORMAT SPICE SYMBOL: IS A ,RS(Ω) ,N(-) ,CJ0(F) ,VJ(V) ,M(-) ,BV(V) ,IBV(A) FREQUENCY RANGE: f = 0.1 GHz～3 GHz REVERSE VOLTAGE RANGE: VR= 2V ～ 25V Ta = 27℃

1SV293

Contextual Info: TOSHIBA 1SV293 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV2 9 3 VCO FOR UHF BAND RADIO U nit in mm • Ultra Low Series Resistance : rg = 0 .2 6 0 Typ. • Useful for Small Size Set MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL

1SV291

Abstract: C25V
Contextual Info: 1SV291 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE UHF SHF TUNING • • • • SILICON EPITAXIAL PLANAR TYPE 1 SV291 Unit in mm High Capacitance Ratio : C 2 V /C 2 5 V = 7.6 TYP. Low Series Resistance : rs = 1.90 (TYP.) Excellent C-V Characteristics, and Small Tracking Error.

D2695

Abstract: 1SV298 MARKING QV
Contextual Info: Ordering number : ENN5224B 1SV298 Silicon Epitaxial PIN Diode 1SV298 π Type Attenuator Applications Features • Package Dimensions Composite type with 3 diodes contained in the CP package currently in use, improving the mounting efficiency greatly. Small interterminal capacitance C=0.23pF typ .

1S553T

Abstract: 1SV125 1SV89 1S553T-HP 1SV74 60Ghz 1S1923 1S1924 1S361 1S362
Contextual Info: ñ & tt « Vrm Vr On* V) (V) PA PA PA PA AFC 200 200 200 200 1W it Mul Mul Mul Mul Mul 1S1922 1S1923 1S1924 1S2094 1S2139—A £t B & trB & frB & AFC APC AFC frB fä AFC AFC 1S2139-B 1S2139-C 1S2339 Ì *r H m 1S2790 1SV29 am 1S362 1S363 1S553T-HP a am

1S553T

Abstract: 60Ghz 1S1923 1S1924 1S361 1S362 1S363 1S553T-HP 1S766 1S767
Contextual Info: & ñ * m fê S T P R fiS Ä p Vrm Vr C t ,C j * p F % tt « On*) (V) (V) PA PA PA PA AFC 200 200 200 200 Mul Mul 1W If 200 it Mul Mul Mul 1S1922 1S1923 1S1924 1S2094 1S2139—A £t B & trB & frB & AFC APC AFC 1S2139-B 1S2139-C 1S2339 Ì *r H m 1S2790 1SV29

Contextual Info: 1SV293 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV293 VCO for UHF Band Radio Unit: mm • Ultra low series resistance: rs = 0.26 Ω typ. · Useful for small size set Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit

1SV291

Contextual Info: 1SV291 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV291 UHF SHF Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 7.6 typ. • Low series resistance: rs = 1.9 Ω (typ.) • Excellent C-V characteristics, and small tracking error.