2SK278 Search Results
2SK278 Datasheets (28)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| 2SK278 | Unknown | Semiconductor Master Cross Reference Guide | Scan | 128.51KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK278 | Unknown | FET Data Book | Scan | 93.66KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2782 | Toshiba | FETs Nch 30V |
Original | 430.98KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2782 | Toshiba | Original | 44.05KB | 9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2782 | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2782 | Toshiba | Power MOSFET Selection Guide with Cross Reference Data | Original | 1.45MB | 45 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2782 | Toshiba | Field Effect Transistor Silicon N Channel MOS Type (Power (L, 2)-Pi-MOS V) | Scan | 154.98KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2782 | Toshiba | Silicon N channel MOS type field effect transistor for high speed, high current switching, DC-DC converter and chopper regulator applications | Scan | 285.43KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2787LS | Sanyo Semiconductor | Large Signal Power MOSFET | Scan | 174.06KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2788 | Hitachi Semiconductor | Silicon N Channel MOS FET High Speed Power Switching | Original | 45.66KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2788 | Hitachi Semiconductor | Power Mosfet 5th Generation | Original | 30.07KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2788 | Renesas Technology | Silicon N Channel MOS FET High Speed Power Switching | Original | 73.04KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2788VYTL-E | Renesas Technology | Silicon N Channel MOS FET High Speed Power Switching | Original | 73.03KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2788VYTR-E | Renesas Technology | Silicon N Channel MOS FET High Speed Power Switching | Original | 73.03KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2789 | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2789 | Toshiba | Original | 44.05KB | 9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2789 | Toshiba | N-Channel MOSFET | Original | 436.04KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2789 | Toshiba | Power MOSFET Selection Guide with Cross Reference Data | Original | 1.45MB | 45 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2789 | Toshiba | Field Effect Transistor Silicon N Channel MOS Type | Scan | 319.88KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2789 | Toshiba | Silicon N channel field effect transistor for high speed, high current switching applications, chopper regulator, DC-DC converter and motor drive applications | Scan | 289.83KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK278 Price and Stock
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2SK2789 | 610 |
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Buy Now | |||||||
Renesas Electronics Corporation 2SK2788VYTR-EPOWER FIELD-EFFECT TRANSISTOR, 1-ELEMENT, SILICON |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2SK2788VYTR-E | 156 |
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Buy Now | |||||||
Hitachi Ltd 2SK2788VYTR2A, 60V, 0.25OHM, N-CHANNEL, SI, POWER, MOSFET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2SK2788VYTR | 88 |
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Buy Now | |||||||
Renesas Electronics Corporation 2SK2788VYWS-EMOSFET N-Channel 60V 2A UPAK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2SK2788VYWS-E | 389 | 1 |
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Buy Now | ||||||
2SK278 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
2sk2782
Abstract: MMA6
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OCR Scan |
2sk2782mma6 | |
K2789
Abstract: 2SK2789 VTCH
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Original |
2sk278910vid2-10s1bvdd80+2 | |
2SK2782
Abstract: 20KU
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OCR Scan |
2sk2782530/ah20ku | |
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Contextual Info: TO SHIBA 2SK2782 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-M O SV 2SK2782 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 4V Gate Drive Low Drain-Source ON Resistance |
OCR Scan |
2sk2782039il100/j | |
2SK2786Contextual Info: MITSUBISHI SEMICONDUCTOR <FIELD-EFFECT TRANSISTOR 2SK2786 ^ FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE DESCRIPTION Mitsubishi 2SK2786 is a silicon N channel ¡unction type FET. It is especially OUTLINE DRAWING 4 .3 M A X designed for low frequency low noise amplify application. |
OCR Scan |
2sk2786100hz70qtyp | |
2SK2787LS
Abstract: 2sk2787
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Original |
2sk2787lsena0990a0990-3/32sk2787 | |
K2782
Abstract: 2SK2782 K278
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Original |
2sk2782k2782k278 | |
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Contextual Info: TOSHIBA 2SK2782 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M OS TYPE L^ tt-M O S V 2SK2782 HIGH SPEED. HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D MOTOR DRIVE APPLICATIONS 4V Gate Drive Low Drain-Source ON Resistance : RdS ( O N ) -Û039O (Typ.) |
OCR Scan |
2sk2782idr--20a | |
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Contextual Info: TOSHIBA 2SK2782 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2782 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS 4 V Gate Drive |
OCR Scan |
2sk2782 | |
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Contextual Info: 2SK2788 Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-538 Z 1st. Edition May 1997 Features • Low on-resistance RDS(o]i) = 0.12D typ (VGS = 10 V, ID= 1 A) • Low drive current • High speed switching • 4V gate drive devices. Outline |
OCR Scan |
2sk2788ade-208-538d-85622 | |
2sk2782Contextual Info: 2SK2782 2 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type L −π−MOSV 2SK2782 Unit: mm Chopper Regulator, DC/DC Converter and Motor Drive Applications z 4 V gate drive z Low drain−source ON-resistance : RDS (ON) = 0.039 Ω (typ.) z High forward transfer admittance |
Original |
2sk2782 | |
2SK2788
Abstract: 2SK2788VYTL-E 2SK2788VYTR-E
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Original |
2sk2788r07ds0511ej0300rej03g1033-0200plzz0004ca-a+2 | |
K2789
Abstract: 2SK2789
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Original |
2sk2789k2789 | |
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Contextual Info: TOSHIBA 2SK2789 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M OS TYPE L^jr-MOSV 2SK2789 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm TO- 220 F L CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS |
OCR Scan |
2sk2789 | |
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Contextual Info: T O S H IB A 2SK2789 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-M O SV 2SK2789 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm TO-220FL CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS |
OCR Scan |
2sk2789o-220fl100//a20kfi | |
L428Contextual Info: TO SHIBA 2SK2789 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- tt-M O SV 2SK2789 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm T0-220FL CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS |
OCR Scan |
2sk2789t0-220fl100/ia20kil+2 | |
Hitachi DSA002780Contextual Info: 2SK2788 Silicon N Channel MOS FET High Speed Power Switching ADE-208-538 1st. Edition Features • Low on-resistance RDS on = 0.12Ω typ (VGS = 10 V, ID = 1 A) • Low drive current • High speed switching • 4V gate drive devices. Outline 2SK2788 Absolute Maximum Ratings (Ta = 25°C) |
Original |
2sk2788ade-208-538hitachi dsa002780 | |
Hitachi DSA002729Contextual Info: 2SK2788 Silicon N Channel MOS FET High Speed Power Switching ADE-208-538 Z 1st. Edition May 1997 Features • Low on-resistance RDS(on) = 0.12Ω typ (VGS = 10 V, ID = 1 A) • Low drive current • High speed switching • 4V gate drive devices. Outline |
Original |
2sk2788ade-208-538d-85622hitachi dsa002729 | |
K2789
Abstract: 2SK2789 working of voltage regulator
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Original |
2sk2789k2789working of voltage regulator | |
k2782
Abstract: 2SK2782 Product type marking code 039
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Original |
2sk2782k2782product type marking code 039 | |
2SK2789Contextual Info: TOSHIBA 2SK2789 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2789 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in m m TO-220FL CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10.3MAX. |
OCR Scan |
2sk2789to-22qfl | |
2SK2782
Abstract: SC64
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Original |
2sk2782sc64 | |
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Contextual Info: 2SK278 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)7.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)100 Minimum Operating Temp (øC) |
Original |
2sk278 | |
k2782
Abstract: 2SK2782 K278
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Original |
2sk2782k2782k278 | |