2SK2788 Search Results

Contextual Info: 2SK2788 Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-538 Z 1st. Edition May 1997 Features • Low on-resistance RDS(o]i) = 0.12D typ (VGS = 10 V, ID= 1 A) • Low drive current • High speed switching • 4V gate drive devices. Outline

2SK2788

Abstract: 2SK2788VYTL-E 2SK2788VYTR-E
Contextual Info: Preliminary Datasheet 2SK2788 R07DS0511EJ0300 Previous: REJ03G1033-0200 Rev.3.00 Jul 27, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.12  typ (VGS = 10 V, ID = 1 A)  Low drive current  High speed switching

Hitachi DSA002780

Contextual Info: 2SK2788 Silicon N Channel MOS FET High Speed Power Switching ADE-208-538 1st. Edition Features • Low on-resistance RDS on = 0.12Ω typ (VGS = 10 V, ID = 1 A) • Low drive current • High speed switching • 4V gate drive devices. Outline 2SK2788 Absolute Maximum Ratings (Ta = 25°C)

Hitachi DSA002729

Contextual Info: 2SK2788 Silicon N Channel MOS FET High Speed Power Switching ADE-208-538 Z 1st. Edition May 1997 Features • Low on-resistance RDS(on) = 0.12Ω typ (VGS = 10 V, ID = 1 A) • Low drive current • High speed switching • 4V gate drive devices. Outline

Contextual Info: Preliminary Datasheet 2SK2788 R07DS0511EJ0300 Previous: REJ03G1033-0200 Rev.3.00 Jul 27, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.12  typ (VGS = 10 V, ID = 1 A)  Low drive current  High speed switching

Hitachi DSA00276

Contextual Info: 2SK2788 Silicon N Channel MOS FET High Speed Power Switching ADE-208-538 Z 1st. Edition Jun 1997 Features • Low on-resistance R DS(on) = 0.12Ω typ (VGS = 10 V, I D = 1 A) • Low drive current • High speed switching • 4V gate drive devices. Outline

Contextual Info: 2SK2788 Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-538 1st. Edition Features • Low on-resistance R DSl m = 0.1251 typ (V GS = 10 V , ID = I A) • Low drive current • High speed switching • 4V gate drive devices. Outline UPAK

2SK2788VYTR-E

Abstract: 2SK2788 2SK2788VYTL-E
Contextual Info: 2SK2788 Silicon N Channel MOS FET High Speed Power Switching REJ03G1033-0200 Previous: ADE-208-538 Rev.2.00 Sep.07,2005 Features • Low on-resistance RDS(on) = 0.12 Ω typ (VGS = 10 V, ID = 1 A) • Low drive current • High speed switching • 4 V gate drive devices.

V1660

Abstract: 2SK2788 Hitachi DSA00238
Contextual Info: 2SK2788 Silicon N Channel MOS FET High Speed Power Switching ADE-208-538 1st. Edition Features • Low on-resistance R DS on = 0.12Ω typ (VGS = 10 V, I D = 1 A) • Low drive current • High speed switching • 4V gate drive devices. Outline UPAK 3 2 1

2SK3235

Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
Contextual Info: HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C Z 4th. Edition Feb. 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting

2sk 4207

Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9

7054F

Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Contextual Info: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver

TO220CFM

Abstract: 2SK2554 TO-220CFM to-3p(i)d series HAT1020R HAT1021R HAT1023R HAT1024R HAT1026R HAT2016R
Contextual Info: Power Mosfet 5th Generation The Performance Revolution Literature Order Number Revision Number 5/14/97 Hitachi Europe, Ltd. European Marketing Power Mosfet 5th Generation - The Performance Revolution 1.1 RDS ON 4.5m Ohm - A new standard has been set With the introduction of the new D5-Series HITACHI started a new age of RDS (ON)

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

T3820BC-5

Abstract: seiko matrix ccd 6 PIN BOARD CAMERA LAYOUT 8275 interfacing Hitachi DSAUTAZ006 8275 interfacing in microprocessor HA118104
Contextual Info: APPLICATION NOTE Third-Generation Digital Camera Demonstration System MV-DS20 1st. Edition ADE-507-071 Z Preface Hitachi has produced digital-camera chip sets for use in hand-held video cameras, security cameras, image scanners for personal computers, and so forth. This application note describes the hardware

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

transistor 2sk

Abstract: transistor sp-10 4ac14 2SK157 transistor 2sk 70 2sj318 transistor 2sk 12 2SK2851 4AC14 TRANSISTOR 2sK 135 K 2796
Contextual Info: POWER TRANSISTOR •General switching Darlington transistor Characteristics tire 7.5 1 k - 20 k 6.0 1 k - 20 k 6.0 1 k - 20 k 8.0 1 k - 20 k 9.0 150011.5 500l_ 16.0 1 k -2 0 k 5.0 1 k -2 0 k 4.0 1 k -2 0 k 3.1 1 k -2 0 k 4.0 1 k -2 0 k 3.0 15006.0 1 k - 20 k

lvc16244

Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
Contextual Info: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List

hitachi j50

Abstract: 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4

rjp3053

Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5

2SK2225 equivalent

Abstract: 2SK1762 equivalent 2sk2221 equivalent C2373 2SK215 equivalent 2SJ182 equivalent 2SK1317 equivalent 2SK1336 equivalent 2SK975 equivalent 2sk1058 equivalent
Contextual Info: Section 1 Lineup by Application 1.1 Power Supply Use 1 Recommended products in each power range Recommended Products in Each Power Range Type power supply Voltage Up to 10 w 10 W to 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 100 V to 132 V AC □ 2SK1151 {3.5}

2SK2788

Abstract: 2SK2788VYTL-E 2SK2788VYTR-E
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid