75GHZ Search Results

RPR1900-800

Abstract: Electro Technik
Contextual Info: POWER FLANGE RESISTORS ELECTRO TECHNIK PERFORMANCE SPECIFICATIONS: 1.100 27.94 .250 (6.35) max. .800 (20.32) .125 (3.18) Part Number: RPR1100-400 Frequency: DC-.75GHz .500 (12.70) .125 (3.18) min. .003 (.076) .250 (6.35) .170 dia. (4.31) .170 (4.31) 400 Watts (5KW Peak)

VPP24K1HD

Abstract: VPP24K1SD VPP24K3HD
Contextual Info: JACK PANELS VPP VIDEO PATCHBAV SERIES ÜiSIÜ FAX: 773 792-2129 -, J . ä 193 VPP VIDEO PATCHBAY SERIES VPP24K3HD75T VJHD*75TX 0 M Ém m The VPP Series video patchbays offer a wide variety of options for video patching. The HD Series meets SMPTE 292M specifications for high definition video signaling,

Turn-Key

Abstract: Adapters Sockets Product Presentations Giga-snaP™ BGA SMT Adapters Receptacles Prototyping Adapters Surface Mount Package Emulation Probing and Analysis Adapters BGA Sockets
Contextual Info:  RoHS ISO w i t h 900 d 08 20 i g n : 1 es Certified Table of Contents Introduction . . . . . . . . . . . . . . . . . . . . . . . 2 Catalog 26 Receptacles . . . . . . . . . . . . . . . . . . . . . 22 Package Conversion For Production Applications . . . . 24-25

TSEV83102G0GL

Abstract: 10 GSPS ADC JTS83102G0 TS81102G0 TS83102G0 TS83102G0CGL
Contextual Info: Released under NDA TS83102G0 MAIN FEATURES ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! 10-bit resolution. 2 GSPS sampling rate. 3 GHz full power input bandwidth. Band flatness: ± 0.2 dB from DC up to 1.5 GHz . Very low input VSWR : 1.15 max from DC to 2GHz (packaged device).

Contextual Info: • fl235b05 Q O T O b i 4 213 ■ SIEMENS CGY181 GaAsMMIC Preliminary Datasheet * Power amplifier for PCN/PCS applications * Fully integrated 2 stage amplifier •Operating voltage range: 2.7 to 6 V •Overall power added efficiency 35 % * Input matched to 50 i2, simple output match

Contextual Info: GaAs & GaN Build your own solution with UMS FOUNDRY SERVICES UMS has developed a proven family of III-V based processes for high performance low noise and high power MMICs. These processes are extensively used by foundry customers and by UMS to offer MMIC solutions for the Defence,

TB-186

Abstract: Mini-Circuits tb-186
Contextual Info: AMPLIFIERS Designer's Kit K2-MNA MINI-CIRCUITS DESIGNER'S KITS THE SOLUTION ! ENLARGED VIEW TOP VIEW EXPOSED METAL BOTTOM 0.5 to 5.9 GHz MNA Features Wideband, 50Ω • 3V & 5V operation • High directivity • Low noise figure • Output power up to +19 dBm typ.

max7660

Abstract: TB-186
Contextual Info: AMPLIFIERS Designer's Kit K1-MNA MINI-CIRCUITS DESIGNER'S KITS THE SOLUTION ! ENLARGED VIEW TOP VIEW EXPOSED METAL BOTTOM 0.5 to 2.5 GHz MNA Features MCLP TM Mini-Circuits Leadless Package • Miniature plastic case Wideband, 50Ω • 3V & 5V operation

M106001

Abstract: MNA-6
Contextual Info: AMPLIFIERS Designer's Kit K2-MNA MINI-CIRCUITS DESIGNER'S KITS THE SOLUTION ! ENLARGED VIEW TOP VIEW EXPOSED METAL BOTTOM 0.5 to 5.9GHz MNA Features Wideband, 50Ω • 3V & 5V operation • High directivity • Low noise figure • Output power up to +19dBm typ.

Nonlinear Effects In Oscillators and Synthesizers

Abstract: 50MHz Colpitts FUJITSU MICROWAVE TRANSISTOR 2058d yig tuned oscillator digital phase shift DC 6GHz fujitsu X-band amplifier rohde MARCONI abstract of Colpitts oscillator
Contextual Info: Nonlinear Effects In Oscillators and Synthesizers Invited Ulrich L. Rohde Chairman, Synergy Microwave Corporation, Paterson, New Jersey ulr@synergymwave.com Abstract - The proposed paper shows existing problems in VCO’s and synthesizers due to the nonlinearities in the active devices and external integrated circuits. This paper proposes a design

SMD 0805 capacitor

Abstract: smd marking code vd SMD Code TON 1624 smd SMD INDUCTOR marking code UM capacitor smd 0805
Contextual Info: SIEMENS C G Y 181 GaAsMMIC Preliminary Datasheet * Power amplifier for PCN/PCS applications * Fully integrated 2 stage amplifier * Operating voltage range: 2.7 to 6 V •Overall power added efficiency 35 % * Input matched to 50 £2, simple output match ESD:

Contextual Info: AMPLIFIERS Designer's Kit K1-MNA MINI-CIRCUITS DESIGNER'S KITS THE SOLUTION ! ENLARGED VIEW EXPOSED METAL BOTTOM TOP VIEW 0.5 to 2.5GHz MNA Features MCLP TM Mini-Circuits Leadless Package • Miniature plastic case Wideband, 50Ω • 3V & 5V operation

FET low noise

Abstract: DC bias of gaas FET FA12202
Contextual Info: ~T1 MITSUBISHI -[DISCRETE SC3- DE Jt.SMTñE'i D O l D l b ñ M IT S U B IS H I SE M IC O N D U C T O R <GaAs FET> FA12202 6249829 MITSUBISHI D I S C R E T E SC> 910 10168 D T -3 l~ 3 5 ' GaAs FET LOW NOISE AMPLIFIER MODULE D E S C R IP T IO N O U T L IN E D R A W IN G

N1999A

Contextual Info: Measurement Considerations for Generating and Analyzing MillimeterWave Signals Application Note In applications that require high-speed, short-range connections, interest is growing in the use of signals that operate at millimeter-wave frequencies. Examples include satellite-to-satellite

Contextual Info: SIEMENS CG Y 184 GaAs MMIC Preliminary Data • • • • • • Power amplifier for PCN applications 2.5 W 34dBm output power at 3.5 V Overall power added efficiency 43 % Fully integrated 4 stage amplifier Power ramp control Input matched to 50 ohms, simple output match

sharp LNB ku band

Abstract: BSCS87M20 LNB ku band
Contextual Info: PREPARED BY DATE SHARP t tizy ““ v CHECKED BY: DATE 08 MAY 1996 ELECTRONIC COMPONENTS GROUP SHARP CORPORATION u, L-5, APPROVED BY: DATE 08 MAY 1996 SPECIFICATION fl, dw SPEC NO. EC-96501 FILE NO. ISSUE 08 MAY 1996 PAGE 7 REPRESENTATIVE DIVISION ❑ ELECTRONIC COMPONENTS DIV.