FPD3000 Search Results

0603 footprint IPC

Abstract: FPD3000 TRANSISTOR BC 157 FPD3000SOT89 FPD3000SOT89E
Contextual Info: FPD3000SOT89 FPD3000SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky

FPD3000

Abstract: MIL-HDBK-263
Contextual Info: FPD3000 FPD30002W Power pHEMT 2W POWER pHEMT Package Style: Bare Die Product Description Features The FPD3000 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx3000μm Schottky barrier gate, defined by high resolution stepper-based photolithography. The recessed gate structure minimizes

Contextual Info: FPD3000 FPD30002W Power pHEMT 2W POWER pHEMT Package Style: Bare Die Product Description Features The FPD3000 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx3000μm Schottky barrier gate, defined by high resolution stepper-based photolithography. The recessed gate structure minimizes

Contextual Info: FPD3000SOT89CE FPD3000SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25m x 3000m

Contextual Info: FPD3000SOT89CE FPD3000SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25Pm x 3000Pm

FPD3000

Abstract: 9809E DSA002831
Contextual Info: FPD3000 TOM3 and TOM2 Models 27/01/2005 Modelling Report FPD3000 TOM3 and TOM2 Models Version 1.0 - Device Design and Modelling Group Filtronic Compound Semiconductor Ltd. 1 FPD3000 TOM3 and TOM2 Models 27/01/2005 Introduction This report describes the models for the FPD3000 discrete p-HEMT device. The

FPD3000SOT89

Contextual Info: EB3000SOT89BA FPD3000SOT89 1.85GHz PA EVALUATION BOARD FEATURES • • ¥ ¥ ¥ Measured @ 1.85GHz 31dBm Output Power 12dB Gain 0.9dB Noise Figure 43dBm OIP3 Bias 5V, 400mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively

FPD3000SOT89

Contextual Info: EB3000SOT89BB FPD3000SOT89 0.9GHz EVALUATION BOARD FEATURES • • ¥ ¥ ¥ Measured @ 1.85GHz 30dBm Output Power 18dB Gain 1.2dB Noise Figure 41dBm OIP3 @ 22dBm Pout Total Power Bias 5V, 400mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively

fpd3000

Abstract: 3024D FPD3000SOT89
Contextual Info: FPD3000SOT89CE FPD3000SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25m x 3000m

Contextual Info: FPD3000 2W POWER PHEMT Datasheet v2.1 FEATURES: • • • • • LAYOUT: 32.5 dBm Linear O/p Power at 12 GHz 6.5 dB Power Gain at 12 GHz 8 dB Maximum Stable Gain at 12 GHz 42 dBm Output IP3 30% Power-Added Efficiency GENERAL DESCRIPTION: The FPD3000 is

FPD3000

Abstract: transistor A114
Contextual Info: FPD3000 Datasheet v3.0 2W POWER PHEMT LAYOUT: FEATURES: • • • • • 32.5 dBm Linear O/p Power at 12 GHz 6.5 dB Power Gain at 12 GHz 8 dB Maximum Stable Gain at 12 GHz 42 dBm Output IP3 30% Power-Added Efficiency GENERAL DESCRIPTION: The FPD3000 is

TRANSISTOR BC 298

Abstract: bc 2878 transistor transistor BC 568 FPD3000SOT89 FPD3000SOT89E transistor BC 8050 bc 2878 fpd3000 bd 8050 TRANSISTOR
Contextual Info: FPD3000SOT89 Datasheet v3.0 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • RoHS 30 dBm Output Power (P1dB) 13 dB Small-Signal Gain (SSG) 1.3 dB Noise Figure 45 dBm Output IP3 45% Power-Added Efficiency FPD3000SOT89E: RoHS compliant

FPD3000SOT89

Abstract: FPD3000SOT89E InGaAs hemt biasing
Contextual Info: FPD3000SOT89E FPD3000SOT8 9E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89E is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm

FPD3000SOT89E

Abstract: FPD3000SOT89CE FPD3000SOT89 micro transistor 1203 EB3000SOT89-BC
Contextual Info: FPD3000SOT89 FPD3000SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky

FPD3000SOT89

Abstract: 9421
Contextual Info: EB3000SOT89BC FPD3000SOT89 2.0GHz PA EVALUATION BOARD FEATURES Frequency GHz P1dB (dBm) SSG (dB) N.F. (dB) OIP3 (dBm) Bias 2.0 2.2 29.5 29.0 12.0 11.5 0.9 0.9 43.5 43.0 5V, 400mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively

FPD3000

Abstract: FPD3000SOT89 FPD3000SOT89E MIL-HDBK-263 0J-60
Contextual Info: FPD3000SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • PERFORMANCE 1850 MHz ♦ 30 dBm Output Power (P1dB) ♦ 13 dB Small-Signal Gain (SSG) ♦ 1.3 dB Noise Figure ♦ 45 dBm Output IP3 ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Available in Lead Free Finish: FPD3000SOT89E

FPD3000P100

Contextual Info: FPD3000P100 2W PACKAGED POWER PHEMT • FEATURES ♦ 32.5 dBm Linear Output Power ♦ 17 dB Power Gain at 2 GHz ♦ 9.5 dB Maximum Stable Gain at 10 GHz ♦ 42 dBm Output IP3 ♦ 45% Power-Added Efficiency at 2 GHz • DESCRIPTION AND APPLICATIONS The FPD3000P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility

Contextual Info: FPD3000 FPD30002W Power pHEMT 2W POWER pHEMT 0.47mmx0.83mm Die Product Description Features The FPD3000 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx3000μm Schottky barrier gate, defined by high resolution stepper-based photolithography. The recessed gate structure minimizes

2.4GHz amplifier schematic

Abstract: FPD3000 transistor 2.4GHz amplifier schematic FPD3000SOT89
Contextual Info: EB3000SOT89BE FPD3000SOT89 2.4GHz PA EVALUATION BOARD DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively matched at a frequency of 2.4 to 2.6GHz. The active device is a FPD3000SOT89 3000 m gate periphery PHEMT. The connectors are SMA jacks soldered to a 30mil

FPD3000

Abstract: MIL-HDBK-263 P100 Au Sn eutectic
Contextual Info: FPD3000 2W POWER PHEMT • FEATURES ♦ 32.5 dBm Linear Output Power at 12 GHz ♦ 6.5 dB Power Gain at 12 GHz ♦ 8 dB Maximum Stable Gain at 12 GHz ♦ 42 dBm Output IP3 ♦ 30% Power-Added Efficiency DRAIN BOND PAD 4X SOURCE BOND PAD (2x) GATE BOND PAD (4X)

transistor BC 568

Abstract: transistor horizontal c 5802 transistor BC 388 bc 2878 transistor 275 v 593 BC 1325
Contextual Info: FPD3000SOT89 Datasheet v2.1 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • RoHS 30 dBm Output Power (P1dB) 13 dB Small-Signal Gain (SSG) 1.3 dB Noise Figure 45 dBm Output IP3 45% Power-Added Efficiency FPD3000SOT89E: RoHS compliant

Filtronic

Abstract: EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500
Contextual Info: FILTRONIC COMPOUND SEMICONDUCTORS PRODUCT CROSS-REFERENCE GUIDE DISCRETE UNPACKAGED DEVICES Note 1: Filtronic P/N Excelics FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B EPA120E EPA120A EPA080A EPA030C EPA018A EPA018A MwT MwT-PH15

FPD3000P100

Abstract: FPD750P100
Contextual Info: FPD750P100 0.5W PACKAGED POWER PHEMT • FEATURES ♦ 26.5 dBm Linear Output Power ♦ 18.5 dB Power Gain at 2 GHz ♦ 11.5 dB Maximum Stable Gain at 10 GHz ♦ 36 dBm Output IP3 ♦ 45% Power-Added Efficiency at 2 GHz • DESCRIPTION AND APPLICATIONS The FPD750P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor

VCO-102

Abstract: NBB-502 spf-5189 RF5643wda cxe-2089
Contextual Info: RFMD Product Selection Guide 2011 - 2012 Multiple Markets. Multiple Choices. One RFMD. ® Multiple Markets. Multiple Choices. One RFMD . ® RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high