45DBM Search Results

hpa L-band

Abstract: EGN21A180IV
Contextual Info: Eudyna GaN-HEMT 180W Preliminary EGN21A180IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Gain: 15dB typ. at Pout=45dBm(Avg.) ・High Efficiency: 32%(typ.) at Pout=45dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz

MAX40003

Abstract: Logarithmic Amplifier detector 25c2625 MAX4003 MAX4003EBL-T MAX4003ETA-T MAX4003EUA MO229
Contextual Info: 19-2620; Rev 1; 3/03 100MHz to 2500MHz, 45dB RF Detector in a UCSP Features ♦ Complete RF Detector ♦ Frequency Range from 100MHz to 2500MHz ♦ Input Range of -58dBV to -13dBV -45dBm to 0dBm into 50Ω ♦ Fast Response: 70ns in 10dB Steps ♦ Low-Current Consumption: 5.9mA at VCC = 3.0V

Contextual Info: Wideband Power Amplifier Product Features • • • • Operation across 20MHz to 1000MHz 45dBm minimum Psat through all band 34dB typical small signal gain GaN HFET RFW1G33H40-28 Application • HF/VHF/UHF Package : DP-75 Description The RFW1G33H40-28 is designed for Wideband Power Amplifier application frequencies from 20 to 1000MHz.

Contextual Info: SMC2933L6012R High Voltage - High Power GaN-HEMT Pallet Amplifier FEATURES • • • • • High Voltage Operation : VDS=50V High Power : 700W typ. @ Pin=31.6W (45dBm) High Efficiency: 50%(typ.) @ Pin=31.6W (45dBm) Power Gain : 13.5dB(typ.) Impedance Matched Zin/Zout = 50 ohm

ATF-501P8

Abstract: R8121 LL1608-FS47NJ 0402CG189C9B200 BCV62B ML200D 350LFM
Contextual Info: ATF-501P8 1900MHz High Linearity Amplifier Application Note 5021 Description Avago Technologies ATF-501P8 is an enhancement mode PHEMT designed for high linearity and medium power applications. With an OIP3 of 45dBm and a noise figure of 1.7dB, ATF-501P8 is well suited as a base station transmit

AP112

Abstract: ap112 rfhic AP112 SOT89 TILT choke FP-85 812 SOT89
Contextual Info: MMIC AP112 Product Features Applications • SOT89 Type Package • High IP3, High Gain • No matching circuit needed • 3MHz-2.5GHz • -73 dBc CTB, 135Channels, +30dBmV/ch, Single • -57 dBc CSO, 135Channels, +30dBmV/ch, Single • -79dBc CTB, 8Channels, +45dBmV/ch, Single

Contextual Info: MMIC AP112 Product Features Application • SOT89 Type Package • High IP3, High Gain • No matching circuit needed • 3MHz-2.5GHz • -73 dBc CTB, 135Channels, +30dBmV/ch, Single • -57 dBc CSO, 135Channels, +30dBmV/ch, Single • -79dBc CTB, 8Channels, +45dBmV/ch, Single

64DPCH

Abstract: E4418B E4438C e4445a
Contextual Info: HPA Module RGP2036-120 Product Features Application • Operating BW 400MHz • WCDMA 2FA, 45dBm • Solid state GaN FET amplifier • Pallet type HPA, Small and light weight • Excellent Power expansion • 50 Ohm Input/Output impedance • High reliability and ruggedness

R8121

Abstract: ATF-501P8 0402CG189C9B200 ATF501P8 BCV62B ML200D low noise high frequency HEMT from agilent pHEMT transistor MTBF 0603CG100J9B20
Contextual Info: ATF-501P8 Application Note ATF-501P8 Applications Information Description Agilent Technologies ATF501P8 is an enhancement mode PHEMT designed for high linearity and medium power applications. With an OIP3 of 45dBm and a noise figure of 1.7dB, ATF-501P8 is well suited

Contextual Info: TGA2806-SM CATV Linear Amplifier Key Features • • • • • • • Frequency Range: 40MHz - 1GHz Gain: 20 dB 1.5 dB 75 Ω Noise Figure Ultra-Low Distortion 45dBm IP3 typ. Low DC Power Consumption Single Supply Bias (+8V) 28L Package Dimension: 5.0 x 5.0 x 0.85 mm

Contextual Info: Wideband Power Amplifier RFW1G33H40-28 Product Features Application • Operation across 20MHz to 1000MHz • 45dBm minimum Psat through all band • 34dB typical small signal gain • GaN HFET • HF/VHF/UHF Package : DP-75 Description The RFW1G33H40-28 is designed for Wideband Power Amplifier application frequencies from 20 to 1000MHz.

AP176

Abstract: TIA-900-10
Contextual Info: Coaxial RF Instrument Amplifier 50Ω TIA-900-10 High Power 100 to 900 MHz Features • instrument model with built-in power supply, 110V operation • high power output at 3.5dB compression, 45dBm typ. • high gain, 34 dB typ. • high reverse isolation, 80 dB typ.

ml marking sot 89

Abstract: bc 339 DC 8881 ml marking ISO-14001 KP024J P0120003P P0120004P RR0816 IDS400
Contextual Info: P0120004P Technical Note 1.5W GaAs Power FET Pb-Free Type ♦Features SUMITOMO ELECTRIC 4 ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +30 dBm output power · Up to +45dBm Output IP3 · High Drain Efficiency · 11dB Gain at 2.1GHz · SOT-89 SMT Package

RFW1G33H40-28

Contextual Info: Wideband Power Amplifier RFW1G33H40-28 Product Features Application • Operation across 20MHz to 1000MHz • 45dBm minimum Psat through all band • 34dB typical small signal gain • GaN HFET • HF/VHF/UHF Package : DP-75 Description The RFW1G33H40-28 is designed for Wideband Power Amplifier application frequencies from 20 to 1000MHz.

ADTL118-75

Abstract: ETC1-1-13
Contextual Info: TGA2806-SM CATV Linear Amplifier Key Features • • • • • • • Frequency Range: 40MHz - 1GHz Gain: 20 dB 1.7 dB 75 Ω Noise Figure Ultra-Low Distortion 45dBm IP3 typ. Low DC Power Consumption Single Supply Bias (+8V) 28L Package Dimension: 5.0 x 5.0 x 0.85 mm

ER 900

Abstract: AP176 TIA-900-10
Contextual Info: NON-CATALOG Coaxial RF Instrument Amplifier 50Ω TIA-900-10 High Power 100 to 900 MHz Features • instrument model with built-in power supply, 110V operation • high power output at 3.5dB compression, 45dBm typ. • high gain, 34 dB typ. • high reverse isolation, 80 dB typ.

ECP050D-500

Contextual Info: ECP050 PRELIMINARY DATA SHEET 0.5WATT POWER AMPLIFIER Features Applications 1800 MHz - 2300MHz 28dBm P1dB High Linearity: 45dBm OIP3 High Efficiency: PAE > 45% 15 dB of Linear Gain Single 5V Supply High Reliablility Class A or AB operation Basestations and Repeaters

transformer 1459

Abstract: TTC-105N 470q
Contextual Info: REV. S ta tu s REVISION 0 2 / 1 0 / 0 0 TS Telecommunication Coupling Transform er A. Electrical Specifications @ 25° C 1. Pri Source Impedance; 6000 2. Sec Load Impedance; 470Q 3. Pri DC Current; 90mA MAX ( 1 - 3 ) 4. Operating Level; — 45dBm to +7dBm

Contextual Info: TGA2806-SM CATV Linear Amplifier Key Features • • • • • • • Frequency Range: 40MHz - 1GHz Gain: 20 dB 1.5 dB 75 Ω Noise Figure Ultra-Low Distortion 45dBm IP3 typ. Low DC Power Consumption Single Supply Bias (+8V) 28L Package Dimension: 5.0 x 5.0 x 0.85 mm

apd oc-3

Abstract: hitachi SAW Filter lightwave receiver hitachi core EE 20
Contextual Info: RCV5467 Preliminary OC-3 Receiver Description The RCV5667 is a lightwave receiver for OC-3. Features • InGaAs APD • High sensitivity: -45dBm • Operation at 155.52Mb/s (scrambled NRZ) at 1.3 |im or 1.55 |im wavelength • ECL1 OK interface • Clock recovery using SAW filter

Contextual Info: HWF1686YC 123456789ABC7DEF7 47 9 B7 7 Autumn 2002 V1 Features 12 12 12 12 Output Power: P1dB=30dBm typ. High Gain: GL=16dB(typ.) High Efficiency: PAE=45%(typ.) High Linearity: IP3=45dBm(typ.) Description Designed for various RF and Microwave applications,

SGN2933-600D-R

Contextual Info: SGN2933-600D-R FEATURES High Voltage - High Power GaN-HEMT for Radar •High Voltage Operation : VDS=50V •High Power : 700W typ. @ Pin=31.6W (45dBm) •High Efficiency: 50%(typ.) @ Pin=31.6W (45dBm) •Broad Band: 2.9 to 3.3GHz • 50 ohm Matched Pair

Contextual Info: SGN2933-600D-R FEATURES High Voltage - High Power GaN-HEMT for Radar •High Voltage Operation : VDS=50V •High Power : 700W typ. @ Pin=31.6W (45dBm) •High Efficiency: 50%(typ.) @ Pin=31.6W (45dBm) •Broad Band: 2.9 to 3.3GHz • 50 ohm Matched Pair

eudyna transistors catalog

Abstract: ISO-14001 KP024J P0120004P RR0816 marking c7 sot-89 SOT89 marking 1Ko PIN DIAGRAM of ic 4028
Contextual Info: P0120004P Technical Note 1.5W GaAs Power FET Pb-Free Type ♦Features 4 ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +30 dBm output power · Up to +45dBm Output IP3 · High Drain Efficiency · 11dB Gain at 2.1GHz · SOT-89 SMT Package