64DPCH Search Results

TQM8M9074

Abstract: Z11 Marking Code
Contextual Info: TQM8M9074 ½ W High Linearity Variable Gain Amplifier Applications 2G / 3G / 4G Wireless Infrastructure LTE / WCDMA / CDMA / EDGE General Purpose Wireless 20-pin 5x5mm leadless package Product Features Functional Block Diagram Integrates Amp + VVA + Amp functionality

WiMAX transceivers

Abstract: ah225
Contextual Info: AH225 1W High Linearity InGaP HBT Amplifier Applications Repeaters Base Station Transceivers High Power Amplifiers Mobile Infrastructure LTE / WCDMA / CDMA / WiMAX SOIC-8 Package Product Features Functional Block Diagram 400-2700 MHz 15.5 dB Gain @ 2140 MHz

ofdm transceiver 900mhz

Abstract: 433 mhz rf power amplifier module efficiency 04023J2R2BBS
Contextual Info: TQP8M9013 ½ W High Linearity 5V 2-Stage Amplifier Applications Repeaters Mobile Infrastructure LTE / WCDMA / CDMA / EDGE 24-pin 4x4mm leadless QFN package GND / NC NC 700-3800 MHz 29.5 dB Gain @ 2140 MHz +28 dBm P1dB +44 dBm Output IP3 2.9 dB Noise Figure

Contextual Info: ALM-32120 0.7GHz – 1.0GHz 2 Watt High Linearity Amplifier Data Sheet Description Features Avago Technologies’ ALM-32120 is a high linearity 2 Watt PA with good OIP3 performance and exceptionally good PAE at 1dB gain compression point, achieved through the

toko 5c

Abstract: MCH18 MCR03 SPA-2318 TAJB106K020R SPA-2318Z
Contextual Info: SPA-2318 Z SPA-2318(Z) Low Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: ESOP-8 Product Description Features RFMD’s SPA-2318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT)

CM05X7R223K16AHF

Abstract: of IC 9290 an 17830 a MGA-43628 MARKING 17305 CM05X7R AVAGO PA LTE ic 8279 block diagram
Contextual Info: MGA-43528 High Linearity 1.93 – 1.995 GHz Power Amplifier Module Data Sheet Description Features Avago Technologies’ MGA-43528 is a fully matched power amplifier for use in the (1.93 – 1.995) GHz band. High linear output power at 5V is achieved through the

Contextual Info: S-Series SGD Fast, Low Noise, Digital Signal Generator Compact, easy to use, high performance signal generator for R&D, manufacturing and the field Features • Wide band cover: SGD-3 - 100 kHz to 3 GHz SGD-6 - 100 kHz to 6 GHz • +13 dBm output +20 dBm option

Contextual Info: plerowTM APM0882-P29 High OIP3 Medium Power Amplifier Module Features Description • S21 = 32.3 dB @ 869 MHz = 31.7 dB @ 894 MHz · NF of 6.6 dB over Frequency · Unconditionally Stable · High OIP3 @ Low Current C o u pl er C o u pl er · Single 5V Supply

Contextual Info: plerowTM APM1765-P29 Low Noise & High OIP3 Medium Power Amplifier Module Features Description • S21 = 36.3 dB @ 1750 MHz = 35.7 dB @ 1780 MHz · NF of 1.8 dB over Frequency · Unconditionally Stable · High OIP3 @ Low Current C o u pl er C o u pl er · Single 5V Supply

Contextual Info: plerowTM APM1842-P29 Low Noise & High OIP3 Medium Power Amplifier Module Features Description • S21 = 34.5 dB @ 1805 MHz = 33.5 dB @ 1880 MHz · NF of 1.5 dB over Frequency · Unconditionally Stable · High OIP3 @ Low Current C o u pl er C o u pl er · Single 5V Supply

Contextual Info: plerowTM APM0866-P29 High OIP3 Medium Power Amplifier Module Features Description • S21 = 32.2 dB @ 865 MHz = 31.8 31.8 dB dB @ @ 868 868 MHz MHz · NF of 6.6 dB over Frequency · Unconditionally Stable · High OIP3 @ Low Current C o u pl er C o u pl er · Single 5V Supply

212-PIN

Abstract: EUDYNA marking c7 sot-89 Eudyna Devices power amplifiers ISO-14001 KP035J P02221B2P P0222
Contextual Info: P02221B2P Technical Note 500mW InGaP HBT Amplifier ♦Features 4 ♦Functional Diagram •1.8 to 2.5GHz Frequency Band ·+26.5dBm Output Power ·+43dBm Output IP3 ·+5V Single Supply Voltage ·14dB Gain at 2.14GHz ·Highly Reliable InGaP HBT ·Pb-free SOT-89 SMT Package

spa1526

Contextual Info: SPA1526Z SPA1526Z 0.7GHz to 2.2GHz 2W InGaP HBT Amplifier 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER Package: SOF-26 NOT FOR NEW DESIGNS Product Description Features RFMD’s SPA1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA1526Z is made with InGaP-on-GaAs

Contextual Info: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT

Contextual Info: Product Brochure MS2830A Signal Analyzer MS2830A-040: 9 kHz to 3.6 GHz MS2830A-041: 9 kHz to 6 GHz MS2830A-043: 9 kHz to 13.5 GHz MS2830A-044: 9 kHz to 26.5 GHz∗ MS2830A-045: 9 kHz to 43 GHz∗ ∗: See catalog for MS2830A-044/045. The MS2830A is a high-speed, high-performance, cost-effective Spectrum Analyzer/Signal Analyzer.

Contextual Info: Product Brochure MS2830A Signal Analyzer MS2830A-040: 9 kHz to 3.6 GHz MS2830A-041: 9 kHz to 6 GHz MS2830A-043: 9 kHz to 13.5 GHz MS2830A-044: 9 kHz to 26.5 GHz∗ MS2830A-045: 9 kHz to 43 GHz∗ ∗: See catalog for MS2830A-044/045. The MS2830A is a high-speed, high-performance, cost-effective Spectrum Analyzer/Signal Analyzer.

Contextual Info: Power Transistor RT233 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 33dBm Typ. @2.5GHz P3dB = 36dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 20dB(Typ.)@900MHz G1dB = 15dB(Typ.)@2.5GHz

WP-22

Contextual Info: Power Transistor RT240J / RT240 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 40dBm Typ. @2.5GHz P3dB = 43dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 18dB(Typ.)@900MHz

TQP8M9013

Abstract: ofdm transceiver 900mhz 04023J2R2BBS 04023J1R0BBS LL1608-FSL2N7S
Contextual Info: TQP8M9013 ½ W High Linearity 5V 2-Stage Amplifier Applications Repeaters Mobile Infrastructure LTE / WCDMA / CDMA / EDGE 24-pin 4x4mm leadless QFN package GND / NC NC 700-3800 MHz 29.5 dB Gain @ 2140 MHz +28 dBm P1dB +44 dBm Output IP3 2.9 dB Noise Figure

Contextual Info: CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 - 2.2

AP601

Abstract: AP601-F AP601-PCB1960 AP601-PCB2140 AP601-PCB900 JESD22-A114
Contextual Info: AP601 High Dynamic Range 1.8W 28V HBT Amplifier Product Features Product Description • 800 – 2400 MHz • +32.5 dBm P1dB • -51 dBc ACLR @ ¼W PAVG • -55 dBc IMD3 @ ¼W PEP Functional Diagram The AP601 is a high dynamic range power amplifier in a lead-free/RoHS-compliant 5x6mm power DFN SMT

Contextual Info: PRELIMINARY CGHV27150MP 150 W, 2300-2700 MHz, 50 V, GaN HEMT for LTE Cree’s CGHV27150MP is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27150MP ideal for 2.3 2.7 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is

Contextual Info: ALM-31222 1.7-2.7GHz 1-Watt High Linearity Amplifier Data Sheet Description Features Avago Technologies’ ALM-31222 is a high linearity 1 Watt PA with good OIP3 performance and exceptionally good PAE at 1dB gain compression point, achieved through the use of Avago Technologies’ proprietary 0.25um GaAs

Contextual Info: ALM-31122 700MHz - 1GHz 1-Watt High Linearity Amplifier Data Sheet Description Features Avago Technologies’ ALM-31122 is a high linearity 1 Watt PA with good OIP3 performance and exceptionally good PAE at 1dB gain compression point, achieved through the