TAJB106K020R Search Results

toko 5c

Abstract: MCH18 MCR03 SPA-2318 TAJB106K020R SPA-2318Z
Contextual Info: SPA-2318 Z SPA-2318(Z) Low Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: ESOP-8 Product Description Features RFMD’s SPA-2318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT)

Contextual Info: Product Description SPA-1118 Sirenza Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

Contextual Info: Product Description SPA-1318 Sirenza Microdevices’ SPA-1318 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

Contextual Info: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT

SXA3318BZ

Abstract: TAJB104KLRH MCH18 SXA-3318B TAJB106K020R AM03M
Contextual Info: SXA-3318B SXA-3318BZ Product Description RoHS Compliant & Green Package Pb 400-2500 MHz Balanced ½ W Medium Power GaAs HBT Amplifier with Active Bias Sirenza Microdevices’ SXA-3318B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost

WR08X512JTL

Contextual Info: NCP1081SPCGEVB Compact, high efficiency, 30 W Reference platform with the NCP1081 Evaluation Board User's Manual http://onsemi.com EVAL BOARD USER’S MANUAL Board Details The NCP1081SPCGEVB implements a PoE power splitter that converts the voltage on the Ethernet cable to a

MCH18

Abstract: MCR03 SPA-1318 TAJB106K020R
Contextual Info: Product Description SPA-1318 This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 2150 MHz PCS band. Its high linearity makes it an ideal choice for multi-carrier and digital applications. 2150 MHz 1 Watt Power Amplifier

MCH18

Abstract: MCR03 SPA-1118 SPA-1118Z TAJB106K020R
Contextual Info: SPA-1118 Product Description Sirenza Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

Contextual Info: EVAL-AD7903SDZ User Guide UG-609 One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com Evaluating the AD7903 Dual Differential, 16-Bit, 1 MSPS PulSAR ADC FEATURES ADDITIONAL EQUIPMENT/SOFTWARE NEEDED

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

MCH18

Abstract: MCR03 SPA-2118 TAJB106K020R SPA2118 2118
Contextual Info: SPA-2118 Z SPA-2118(Z) 850MHz 1 Watt Power Amplifier with Active Bias 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS RoHS Compliant and Pb-Free Product (Z Part Number) Package: ESOP-8 Product Description Features RFMD’s SPA-2118 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic

v726

Abstract: 25c2625
Contextual Info: Preliminary Product Description SPA-2318 Stanford Microdevices’ SPA-2318 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

TAJB106K020R

Abstract: ECB-101161
Contextual Info: Preliminary Product Description SPA-1218 Sirenza Microdevices’ SPA-1218 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

25C2625

Abstract: power amp schematic
Contextual Info: Preliminary Product Description SPA-2318 Sirenza Microdevices’ SPA-2318 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

Contextual Info: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT

lot code RFMD

Abstract: ECB-101161
Contextual Info: SPA2118Z SPA2118Z 850MHz 1 Watt Power Amplifier with Active Bias 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Features Optimum Technology Matching Applied • VC1 VBIAS Active Bias SiGe BiCMOS GaAs pHEMT

an 214 amp schematic diagram

Abstract: ROHM MCR03 ECB-101161
Contextual Info: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Features GaAs MESFET      InGaP HBT VC1 Si BiCMOS VBIAS SiGe HBT GaAs pHEMT RFIN Si CMOS Si BJT

IC-276

Abstract: 25c2625
Contextual Info: Preliminary Product Description SPA-2318 Sirenza Microdevices’ SPA-2318 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

smd code r55

Contextual Info: MCP3913 ADC Evaluation Board for 16-Bit MCUs User’s Guide  2013 Microchip Technology Inc. DS50005224A Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

transistor 1p3

Contextual Info: SXA-3318B Z SXA-3318B(Z) 400MHz to 2500MHz Balanced ½ W Medium Power GaAs HBT Amplifier 400MHz to 2500MHz BALANCED ½ W MEDIUM POWER GaAs HBT AMPLIFIER NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Product Description Features RFMD’a SXA-3318B amplifier is a high efficiency GaAs Heterojunction

MCH18

Abstract: MCR03 SPA-2118 TAJB106K020R IC1150
Contextual Info: Preliminary Product Description SPA-2118 Sirenza Microdevices’ SPA-2118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

MX045HS40M0000

Abstract: murata NFE61PT102E1H9L FPGA LABVIEW EVAL-CED1Z MX045HS40M 2222 2401 3676 NFE61PT102E1H9L 7408 smd 74279266lf B0603R104KCT Multicomp
Contextual Info: Evaluation Board for AD7764/AD7765 using EVAL-CED1Z EVAL-AD7764/AD7765EDZ Preliminary Technical Data board outputs the MCLK signal which the AD7764/5 use to sample the analog inputs. FEATURES Full-featured evaluation board for the AD7764/AD7765 EVAL-CED1Z compatible

200 watt schematics power amp

Abstract: MCH18 MCR03 SPA-1118 SPA-1118Z TAJB106K020R Sirenza Microdevices al
Contextual Info: SPA-1118 Product Description Sirenza Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

Contextual Info: SPA2118Z SPA2118Z 850MHz 1 Watt Power Amplifier with Active Bias 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2118Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic