SPA2118 Search Results

lot code RFMD

Abstract: ECB-101161
Contextual Info: SPA2118Z SPA2118Z 850MHz 1 Watt Power Amplifier with Active Bias 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Features Optimum Technology Matching Applied • VC1 VBIAS Active Bias SiGe BiCMOS GaAs pHEMT

Contextual Info: SPA2118Z SPA2118Z 850MHz 1 Watt Power Amplifier with Active Bias 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2118Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic

Contextual Info: SPA2118Z SPA2118Z 850MHz 1 Watt Power Amplifier with Active Bias 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2118Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic

AT880

Abstract: lot code RFMD
Contextual Info: SPA2118Z SPA2118Z 850MHz 1 Watt Power Amplifier with Active Bias 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features Optimum Technology Matching Applied • VC1 DE VBIAS Active Bias

Contextual Info: SPA2118Z SPA2118Z 850MHz 1 Watt Power Amplifier with Active Bias 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2118Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic

MCH18

Abstract: MCR03 SPA-2118 TAJB106K020R SPA2118 2118
Contextual Info: SPA-2118 Z SPA-2118(Z) 850MHz 1 Watt Power Amplifier with Active Bias 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS RoHS Compliant and Pb-Free Product (Z Part Number) Package: ESOP-8 Product Description Features RFMD’s SPA-2118 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic

2005Z

Abstract: TRANSISTOR a105 a105 transistor 2005 Z 2005.z SXA3318BZ JESD22-A113C spa2318z JESD22-A-102 JESD22-A104B
Contextual Info: Reliability Qualification Report SPA-2318 - SnPb Plated SPA-2318Z - Matte Sn, RoHS compliant Products Qualified by Similarity SPA-1118 SPA-1218 SPA-1318 SPA-2118 SXA-3318B SPA-1118Z SPA-1218Z SPA-1318Z SPA-2118Z SXA-3318BZ The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for

BALUN-0900BL18B100

Abstract: rcp890a05 UHF rfid reader RCP890 AS399X circuit micro controller interface between rfid 748431090 748131009 C8051F340 as3991 application note
Contextual Info: Hardware Description of AS399x “ROGER” - UHF RFID Reader System Demo Kit Reference Rev 1.5 March 2010 Proprietary and Confidential 1 1 Introduction. 2

MCH18

Abstract: MCR03 SPA-2118 TAJB106K020R IC1150
Contextual Info: Preliminary Product Description SPA-2118 Sirenza Microdevices’ SPA-2118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

SPA-2118

Abstract: TRANSISTOR 726 transistor a 726 ECB-101161
Contextual Info: Preliminary Product Description SPA-2118 Stanford Microdevices’ SPA-2118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

Contextual Info: Preliminary Product Description SPA-2118 Stanford Microdevices’ SPA-2118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

SPA-2118

Abstract: MCH18 MCR03 TAJB106K020R SPA2118
Contextual Info: Product Description SPA-2118 Sirenza Microdevices’ SPA-2118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

RF5632

Abstract: PNP-1090-P22 UMX-254-D16-G UMX-333-D16-G RF1194 UMX-406-D16 SPF-5043Z UMX-519-D16-G SHF-0289 spf-5122z
Contextual Info: 2009 RFMD Multi-Market Product Selection Guide Multiple Markets. Multiple Choices. One RFMD. RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high-performance RF components for a diverse range of applications and end markets. Our product

Contextual Info: Preliminary Product Description SPA-2118 Sirenza Microdevices’ SPA-2118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

RCP890

Abstract: UHF rfid reader
Contextual Info: austriamicrosystems AG is now ams AG The technical content of this austriamicrosystems application note is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: ams_sales@ams.com