DS121024 Search Results

Contextual Info: RF2314 GENERAL PURPOSE LOW NOISE AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: SOT 5-Lead Features       150MHz to 2500MHz Operation 2.7V to 6.0V Single Supply +18dBm Output IP3 at 5V 14dB Gain at 900MHz 8.6dB Gain at 1900MHz

AGILENT 9988

Abstract: 526e3 Hewlett-Packard OR Agilent 9988 agilent
Contextual Info: RF2484 RF2484Direct Quadrature Modulator DIRECT QUADRATURE MODULATOR      IREF ISIG QSIG 14 13 12 GND  GND 3 11 GND -45° +45° 10 VCC 5 6 7 8 9 GND LO 4 RF OUT Dual-Band CDMA Base Stations TDMA/TDMA-EDGE Base Stations GSM-EDGE/EGSM Base Stations

Contextual Info: RF2174 RF21743V DCS Power Amplifier 3V DCS POWER AMPLIFIER        VCC2 VCC2 VCC2 2F0 AT_EN 2 12 RF OUT RF IN 3 11 RF OUT GND1 4 10 RF OUT 5 6 7 8 9 Functional Block Diagram Applications  13 GND  14 VCC  15 APC2  Single 2.7V to 4.8V Supply

Contextual Info: RF2411 LOW NOISE AMPLIFIER/MIXER RoHS Compliant & Pb-Free Product Package Style: SOIC-14 LNA Features       14 LNA OUT LNA IN 1 Single 3V to 6.5V Power Supply 500MHz to 1900MHz Operation 25dB Small Signal Gain 2.5dB Cascaded Noise Figure

Contextual Info: RF2480 RF2480Direct Quadrature Modulator DIRECT QUADRATURE MODULATOR RoHS Compliant & Pb-Free Product Package Style: SOIC-16 I REF 1 16 I SIG Q REF 2 15 Q SIG GND2 3 14 GND1 GND2 4 13 GND1 GND2 5 12 GND1 LO 6 11 VCC2 10 GND1 9 RF OUT Features    

Contextual Info: RF2442 HIGH-LINEARITY LOW NOISE AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: MSOP-8 Features      Low Noise and High Intercept Point External Bias Control Single 2.5V to 5.0V Power Supply 500MHz to 2500MHz Operation Extremely Small MSOP-8

25c2625

Abstract: ECB-101161 267M3502104
Contextual Info: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT

ncl 071

Contextual Info: RF2173 3V GSM POWER AMPLIFIER Package Style: QFN, 16-Pin, 4x4      3V GSM Cellular Handsets 3V Dual-Band/Triple-Band Handsets GPRS Compatible Commercial and Consumer Systems Portable Battery-Powered Equipment VCC2 NC 2F0 GND2 2 12 RF OUT RF IN 3

Contextual Info: RF2422 2.5GHZ DIRECT QUADRATURE MODULATOR RoHS Compliant & Pb-Free Product Package Style: SOIC-16 Features       Single 5V Power Supply Integrated RF Quadrature Network No Tuning Required Low LO Input Level Digitally Controlled Power Down Mode

Contextual Info: RF2367 RF2367PCS CDMA/TDMA/ GSM1800 3V PA Driver Amplifier PCS CDMA/TDMA/GSM1800 3V PA DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: SOT23-6 Features  Low Noise and High Intercept Point  Adjustable Bias Current  Power Down Control

Contextual Info: RF2162 This is a Legacy Product. For new designs, please contact RFMD to learn about our newer products. 3V 900MHz LINEAR AMPLIFIER Package Style: QFN, 16-Pin, 4x4  Single 3V Supply  29dBm Linear Output Power  29dB Linear Gain GND VCC1 VCC1 VCC BIAS

Contextual Info: SPA2118Z SPA2118Z 850MHz 1 Watt Power Amplifier with Active Bias 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2118Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic

1watt wireless amplifier schematic

Contextual Info: SPA1118Z SPA1118Z 850MHz 1Watt Power Amplifier with Active Bias 850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA1118Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic