29DBM Search Results

Contextual Info: SMM-208 1.5-2.5 GHz, 0.8 Watt GaAs MIMIC Amplifier March, 1995 Features - 25dB Gain and 29dBm Output Power - High Power Added Efficiency - Characterized at 3 Volts - Low Cost Surface Mount Package AI 1 I I I I I i 1 > i 1 , li 1 1 I ! I ! T 1 A 1 I C 1 1 ! ’

Contextual Info: FMM5017VF GaAs MMIC FEATURES • • • • • • High Output Power: 29dBm typ. High Linear Gain: 20dB (typ.) Low In/Out VSWR Integrated Output Power Monitor Impedance Matched Zin/Zout = 50W Small Hermetic Metal-Ceramic Package (VF) DESCRIPTION The FMM5017VF is a MMIC amplifier designed for VSAT applications

Contextual Info: Advance Product Information October 31, 2008 5.6 Watt 3.5GHz Packaged HPA TGA2925-SG Key Features • • • • • • • • • 3.5 GHz Application Frequency Range 11 dB Nominal Gain 2.5%EVM @29dBm OFDM signal at 3.5GHz 37.5 dBm Nominal Psat Internally Partially Matched

Contextual Info: FMM5017VF GaAs MMIC FEATURES • • • • • • High Output Power: 29dBm typ. High Linear Gain: 20dB (typ.) Low In/Out VSWR Integrated Output Power Monitor Impedance Matched Zin/Zout = 50Ω Small Hermetic Metal-Ceramic Package (VF) DESCRIPTION The FMM5017VF is a MMIC amplifier designed for VSAT applications

Contextual Info: FMM5017VF FUJITSU MMIC FEATURES • • • • • • High Output Power: 29dBm typ. High Linear Gain: 20dB (typ.) Low In/Out VSWR Integrated Output Power Monitor Impedance Matched Zin/Zout = 50Q Small Hermetic Metal-Ceramic Package (VF) DESCRIPTION The FMM5017VF is a MMIC amplifier designed for VSAT applications

EMP214

Contextual Info: EMP214-Q5 12.50 – 15.50 GHz Surface-Mounted PA FEATURES • • • • 12.5 – 15.5 GHz Operating Frequency Range 29dBm Output Power at 1dB Compression 13.0 dB Typical Small Signal Gain -41dBc OIMD3 @Each Tone Pout 18.5dBm APPLICATIONS • • Point-to-point and point-to-multipoint radio

RFMA12

Contextual Info: RFMA1214-1W-Q7 12.50 – 14.50 GHz High-Gain Surface Mounted PA FEATURES • • • • • 12.50 – 14.50GHz Operating Frequency Range 29dBm Output Power @1dB Compression 30dB Typical Power Gain @1dB Compression -41dBc OIMD3 @Pout = 19dBm/tone 7X7mm QFN Package

Contextual Info: RFPA5201E WiFi Power Amplifier 5.0V, 2.4GHz to 2.5GHz The RFPA5201E is an integrated Power Amplifier PA designed for high performance WiFi systems requiring up to +29dBm linear output power. The PA is manufactured on an advanced RFMD InGaP Heterojunction Bipolar Transistor (HBT) process for optimal efficiency

PCB Rogers RO4003

Abstract: TGA2925-SG RO4003
Contextual Info: Advance Product Information Aug 16, 2005 5.6 Watt 3.5GHz Packaged HPA TGA2925-SG Key Features • • • • • • • • • 3.5 GHz Application Frequency Range 11 dB Nominal Gain 2.5%EVM @29dBm OFDM signal at 3.5GHz 37.5 dBm Nominal Psat Internally Partially Matched

Contextual Info: RFPA3809 RFPA3809 GaAs HBT 400MHz to 2700MHz Power Amplifier GaAs HBT 400MHz TO 2700MHz POWER AMPLIFIER Package: SOIC-8 Features  High Linearity: OIP3=49dBm 880MHz  Low Noise: NF=3.1dB (2140MHz)  P1dB>29dBm  400MHz to 2700MHz Operation  Thermally Enhanced Slug

Contextual Info: E-pHEMT AE663 Product Features Application • 500 ~ 4000MHz • GaAs E-pHEMT • 41dBm Output IP3 • 20dB Gain at 900MHz • 29dBm P1 dB • SOT-89 SMT Package • Single +5V Supply • Pb Free / RoHS Standard • Cellular, CDMA,W-CDMA, Wimax Drive or Pre-drive Amplifier

Contextual Info: AWT6274 HELP PCS/WCDMA 3.4V/29dBm Linear Power Amplifier Module TM PRELIMINARY DATA SHEET - Rev 1.6 FEATURES • InGaP HBT Technology • High Efficiency: 43 % @ POUT = +29 dBm 21 % @ POUT = +16 dBm AWT6274 15 % @ POUT = +7 dBm • Low Quiescent Current: 15 mA

capacitor 3.3UF

Abstract: 10nF cap 10nFcap capacitor 33uF 33uF 75V
Contextual Info: MICROWAVE POWER MMIC AMPLIFIER TMD3438-1 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ Suitable for WLL Terminal „ High Gain G1dB=29dB min „ High Power P1dB=29dBm(min) „ Semi-Hermetically Sealed Package ABSOLUTE MAXIMUM RATINGS ( Ta= 25°°C ) CHARACTERISTICS

Contextual Info: AMMP-6430 27-34 GHz, 0.5W Power Amplifier in SMT Package Data Sheet Description Features The AMMP-6430 MMIC is a broadband 1W power amplifier in a surface mount package designed for use in transmitters that operate in various frequency bands between 27GHz and 34GHz. At 30GHz, it provides 29dBm

Contextual Info: AMMP-6430 27-34 GHz, 0.5W Power Amplifier in SMT Package Data Sheet Description Features The AMMP-6430 MMIC is a broadband 1W power amplifier in a surface mount package designed for use in transmitters that operate in various frequency bands between 27GHz and 34GHz. At 30GHz, it provides 29dBm

Contextual Info: Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK SAW Duplexer 1732.50 / 2132.50MHz Part No: MP05792 A. MAXIMUM RATING: 1. Maximum Input Power: 29dBm 2. DC voltage: 0V 3. Operating Temperature: -20°C to +85°C

TC3532

Abstract: GRM39C0G102J50V GRM39Y5V104Z25V RO4003
Contextual Info: TC3532 REV.4_04/12/2004 4.9 - 6 GHz 29dBm MMIC FEATURES • • • • P-1 dB: 29 dBm Small Signal Gain: 21 dB Power Added Efficiency: 25 % • Match to 50 Ω operation Bias condition: 400 mA @ 8 V • PHOTO ENLARGEMENT IP3: 39 dBm DESCRIPTION The TC3532 is a 2 stage PHEMT MMIC power amplifier. It is designed for use in low cost, high volume,

AWT6105

Abstract: AWT6105M5
Contextual Info: AWT6105 Cellular Dual Mode AMPS/CDMA 3.5V/29dBm Linear Power Amplifier Module Advanced Product Information Rev. 2 V REF V The AWT6105 is a high power, high efficiency amplifier module for Dual Mode CDMA/AMPS wireless handset applications. The device is manufactured on an advanced InGaP HBT MMIC

STC918SF

Abstract: kst tuner kst21
Contextual Info: STC918SF Semiconductor NPN Silicon Transistor Features • High current transition frequency fT=9.0 GHz Typ. @VCE=6V, IC=15mA • Low Noise Figure NFmin=1.4dB(Typ.) @1.0 GHz, VCE=8V, IC=3mA • Maximum Stable Gain(MSG)=19dB @1.0 GHz, VCE=6V, IC=10mA • Output third order intercept output(IP3)=29dBm @ 1.0 GHz,VCE=6V, IC=10mA

13001 TRANSISTOR 126 package

Abstract: STC917UF s-parameter RF POWER TRANSISTOR NPN
Contextual Info: STC917UF Semiconductor NPN Silicon Transistor Features • High current transition frequency fT=8.0 GHz Typ. @VCE=6V, IC=7mA • Low Noise Figure NFmin=1.4dB(Typ.) @1.0 GHz, VCE=8V, IC=3mA • Maximum Stable Gain(MSG)=19dB @1.0 GHz, VCE=6V, IC=10mA • Output third order intercept output(IP3)=29dBm @ 1.0 GHz,VCE=6V, IC=10mA

Contextual Info: TGA2613-SM S-Band High Linearity LNA Applications • Commercial and Military Radar  Communications QFN 5x5 mm 24L Product Features          Functional Block Diagram Frequency Range: 2.5 – 4.0GHz NF: 2.5dB ITOI: 29dBm P1dB: >28.5dBm

AMMP-6430

Abstract: 18E DBM A004R 52719
Contextual Info: AMMP-6430 27-34 GHz, 0.5W Power Amplifier in SMT Package Data Sheet Description Features The AMMP-6430 MMIC is a broadband 1W power amplifier in a surface mount package designed for use in transmitters that operate in various frequency bands between 27GHz and 34GHz. At 30GHz, it provides 29dBm

Contextual Info: STC918SF Semiconductor NPN Silicon Transistor Features • High current transition frequency fT=9.0 GHz Typ. @VCE=6V, IC=15mA • Low Noise Figure NFmin=1.4dB(Typ.) @1.0 GHz, VCE=8V, IC=3mA • Maximum Stable Gain(MSG)=19dB @1.0 GHz, VCE=6V, IC=10mA • Output third order intercept output(IP3)=29dBm @ 1.0 GHz,VCE=6V, IC=10mA

H40P

Abstract: NN12 P35-5136-000-200 MARCONI power
Contextual Info: P35-5136-000-200 HEMT MMIC POWER AMPLIFIER, 28GHz Features • • • Gain; 15dB typical @ 28GHz P-1dB; 29dBm typical @ 28GHz 0.20 µm pHEMT technology Description The P35-5136-000-200 is a high performance 28GHz Gallium Arsenide power amplifier, capable of output powers