27GHZ Search Results

PE44340

Contextual Info: BODY CONTACT INSULATOR MATERIALS STAINLESS STEEL GOLD PLATED GOLD PLATED PTFE SPECIFICATIONS FREQUENCY RANGE: VSWR: 1.2 MAX DC TO 27GHz .1020 2 HOLES MOUNTING HOLES PASTERNACK ENTERPRISES, INC, P.O BOX 16759, IRVINE, CA 92623 PHONE (949) 261-1920 FAX <949) 261-7451

Contextual Info: K-Band Packaged Power Amplifier TGA4525-SM Key Features and Performance • • • • • • 17GHz - 27GHz Bandwidth 22 dB Typical Gain 37 dBm Typical OTOI 29 dBm Typical P1dB Vd = 7V, Id = 760mA Id = 830mA @ P1dB Package Dimensions: 5.0 x 5.0 x 1.10 mm

CHE1260

Abstract: Microwave detector diodes 18 GHz
Contextual Info: CHE1260 RoHS COMPLIANT 10-27GHz Bidirectionnal Detector GaAs Monolithic Microwave IC Description The CHE1260 is a bidirectionnal detector that integrates a passive bidirectionnal coupler, two matched detection diodes and two reference diodes. Vref_R DC_R It allows the measurement of transmitted

CA201212001

Contextual Info: REVISIONS REV A DESCRIPTION OF REVISION ECN No. INITIAL RELEASE DATE APPROVED 15/10/12 M. Dong TECHNICAL DATA Electrical Impedance Frequency range VSWR Insert Loss Max. 50 Ω 0~40 GHz 1.25:1 0.72dB (2GHz) 1.22dB (6GHz) 1.61dB(10GHz) 2.16dB(18GHz) 2.77dB(27GHz)

Contextual Info: AMMP-6430 27-32 GHz 0.5W Power Amplifier in SMT Package Data Sheet Description Features The AMMP-6430 MMIC is a broadband 1W power amplifier in a surface mount package designed for use in transmitters that operate in various frequency bands between 27GHz and 32GHz. At 30GHz, it provides 29dBm

CHE1260

Contextual Info: CHE1260 RoHS COMPLIANT 10-27GHz Bidirectionnal Detector GaAs Monolithic Microwave IC Description The CHE1260 is a bidirectionnal detector that integrates a passive bidirectionnal coupler, two matched detection diodes and two reference diodes. Vref_R DC_R It allows the measurement of transmitted and

T-910S01

Contextual Info: Broadband Coaxial Isolators & Circulators T-910S01 10GHz to 27GHz Specifications RF Frequency Isolation Insertion Loss VSWR Peak Power Average Power Package Size Environmental Notes Specifications subject to change without notice Mica Microwave | Manteca, CA | 1-209-825-3977 | www.Mica-MW.com

CHU4164-QEG

Abstract: "UP Converter" 2loif U4164 AN0017 MO-220
Contextual Info: CHU4164-QEG RoHS COMPLIANT 17-27GHz Up Converter GaAs Monolithic Microwave IC in SMD package Description The CHU4164-QEG is an I/Q up converter, which integrates a balanced cold fet mixer, and a time two multiplier. It is designed for a wide range of applications,

PCB Rogers RO4003 substrate

Abstract: AN0017 MO-220 RO4003 QFN 5x5 Rogers RO4003
Contextual Info: PA-P013663-QGG RoHS COMPLIANT 17-27GHz High Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The PA-P013663-QGG is a monolithic high power amplifier. three-stage The circuit is manufactured with a power PHEMT process, 0.15µm gate length, via holes

AMMP-6429

Contextual Info: AMMP-6429 27-29.5GHz, 0.5W Power Amplifier in SMT Package Data Sheet Description Features The AMMP-6429 MMIC is a broadband 1W power amplifier in a surface mount package designed for use in transmitters that operate in various frequency bands between 27GHz and 29GHz. At 29GHz, it provides 29dBm

L504XXX

Abstract: transistor 9427 m507xxx 9437 transistor CLCC 100 1550371 9434 8 pin integrated circuit
Contextual Info: March 1996 RR-B1A High-Frequency Bipolar Products Reliability Report This report presents the product reliability data for Maxim’s High-Frequency Bipolar analog and digital products. This data was collected from extensive reliability stress tests performed between June 1, 1994 and July 1,

DC TO 18GHZ RF AMPLIFIER MMIC

Abstract: gold metal detectors AMMC-6345 AMMC-6425 vg 9612
Contextual Info: AMMC - 6425 18 - 28 GHz Power Amplifier Data Sheet Chip Size: 2500 x 1750 µm 100 x 69 mils Chip Size Tolerance: ± 10 µm (±0.4 mils) Chip Thickness: 100 ± 10 µm (4 ± 0.4 mils) Pad Dimensions: 100 x 100 µm (4 ± 0.4 mils) Description Features The AMMC-6425 MMIC is a broadband 1W power amplifier

CHA5093

Contextual Info: CHA5093 22-26GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA5093 is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds.

Contextual Info: FMM5829X K-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 31 dBm Typ. •High Linear Gain; GL = 23 dB(Typ.) •Frequency Band ; 21.0 - 27.0 GHz •High Linearity ; OIP3 = 39dBm •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5829X is a power amplifier MMIC that contains a four

EMM5834

Contextual Info: EMM5834X Ku / K-Band Power Amplifier MMIC FEATURES •Output Power; P1dB = 26 dBm Typ. •High Gain; G1dB = 23 dB(Typ.) •Wide Frequency Band ; 12.7 - 27.0 GHz •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The EMM5834X is a wide band power amplifier MMIC that

TGA1135B

Abstract: schematic diagram temperature control oven furnace TGA1135B-SCC
Contextual Info: Product Datasheet February 14, 2008 18-27 GHz 1W Power Amplifier TGA1135B-SCC Key Features • • • • • • • Primary Applications Chip Dimensions 2.641 mm x 1.480 mm x 0.1016mm Product Description The TriQuint TGA1135B-SCC is a balanced twostage HPA MMIC design using TriQuint’s proven

Contextual Info: Advance Product Information September 26, 2006 K Band Packaged Low Noise Amplifier TGA4506-SM Key Features • • • • • • 21-27 GHz Bandwidth 21 dB Nominal Gain 2.5 dB Nominal Noise Figure 10 dBm Nominal P1dB Bias: 3.5 V, 60 mA Package Dimensions:

free transistor and ic equivalent data

Abstract: free transistor Germanium Amplifier Circuit diagram germanium transistors NPN k2a2 GERMANIUM TRANSISTOR silicon bipolar transistor low noise amplifier Germanium Amplifier silicon germanium germanium NPN
Contextual Info: BASESTATIONS / WIRELESS INFRASTRUCTURE WIRELESS, RF, AND CABLE Mar 15, 2000 Silicon Germanium SiGe Technology Enhances Radio Front-End Performance This application note describes how silicon germanium enhances IC performance in RF applications. A Giacoleto model is used to analyze noise effects. Wider gain bandwidth of SiGe technology is

Contextual Info: MMICs, RFICs, Integrated system solution Microwave & Millimeter wave product Line = VectraWave is a solution provider for integrated electronic in high frequency, microwaves and optoelectronic for telecommunications and

2482S

Contextual Info: SP8854E MITEL 2 7GHz Parallel Load Professional Synthesiser Preliminary Information SE M IC O N D U C T O R Supersedes January 1996 version, DS4238 - 1.2 DS4238 - 2.0 The SP8854E is one of a family of parallel load synthesisers containing all the elem ents apart from the loop am plifier to

Contextual Info: HMC943LP5E v02.0113 Amplifiers - lineAr & power - smT Gaas pHEMT MMIC 1.5 WaTT pOWER aMpLIFIER, 24 - 31.5 GHz Typical applications Features The HmC943lp5e is ideal for: saturated output power: +34 dBm @ 24% pAe • point-to-point radios High output ip3: +41 dBm

Contextual Info: Product Datasheet February 14, 2008 18-27 GHz 1W Power Amplifier TGA1135B-SCC Key Features • • • • • • • Primary Applications Chip Dimensions 2.641 mm x 1.480 mm x 0.1016mm Product Description The TriQuint TGA1135B-SCC is a balanced twostage HPA MMIC design using TriQuint’s proven

CHE1270

Abstract: CHE1270-QAG MO-220 AN0017
Contextual Info: CHE1270-QAG RoHS COMPLIANT 10-44GHz Wide Band Detector GaAs Monolithic Microwave IC in SMD leadless package Description UMS E1270 YYWW The CHE1270-QAG is a detector that integrates a matched detector diode Vdet and a reference diode (Vref). It is designed for a wide range of applications

MO-220

Abstract: AN0017 CHE1270 CHE1270-QAG esd protection smd
Contextual Info: CHE1270-QAG RoHS COMPLIANT 5-44GHz Detector GaAs Monolithic Microwave IC in SMD leadless package Description The CHE1270-QAG is a detector that integrates a matched detector diode Vdet and a reference diode (Vref). It is designed for a wide range of applications