CGHV22 Search Results

CGHV22 Datasheets (4)

Filter by Manufacturer

Cree

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
CGHV22100F		Cree	RF FETs, Discrete Semiconductor Products, MOSF RF 125V 6A 2.2GHZ 440162	Original	PDF		10
CGHV22100-TB		Cree	RF FETs, Discrete Semiconductor Products, MOSF RF 125V 6A 2.2GHZ 440162	Original	PDF		10
CGHV22200F		Cree	RF FETs, Discrete Semiconductor Products, MOSF RF 125V 12A 2.2GHZ 440162	Original	PDF		12
CGHV22200-TB		Cree	RF FETs, Discrete Semiconductor Products, MOSF RF 125V 12A 2.2GHZ 440162	Original	PDF		12

CGHV22 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 - 2.2	Original	cghv22200 cghv22200f cghv22 ghv22200p	PDF
Contextual Info: CGHV22100 100 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22100 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22100 ideal for 1.8 - 2.2 GHz	Original	cghv22100 cghv22 ghv22100p	PDF
Contextual Info: PRELIMINARY CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is	Original	cghv22200 cghv22200f cghv22 ghv22200p	PDF
Contextual Info: PRELIMINARY CGHV22300MP 300 W, 1800 -2200 MHz, GaN HEMT for LTE Cree’s CGHV22300MP is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22300MP ideal for	Original	cghv22300mp cghv22	PDF
Contextual Info: CGHV22100 100 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22100 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22100 ideal for 1.8 - 2.2 GHz	Original	cghv22100 cghv22 ghv22100p	PDF
Contextual Info: CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 - 2.2	Original	cghv22200 cghv22200f cghv22 ghv22200p	PDF
Contextual Info: PRELIMINARY CGHV22100 100 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22100 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22100 ideal for 1.8 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is	Original	cghv22100 cghv22 ghv22100p	PDF
Contextual Info: PRELIMINARY CGHV22150MP 150 W, 1800-2200 MHz, 50 V, GaN HEMT for LTE Cree’s CGHV22150MP is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22150MP ideal for 1.8 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is	Original	cghv22150mp cghv22	PDF
CGHV22200 Contextual Info: PRELIMINARY CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is	Original	cghv22200 cghv22200f cghv22 ghv22200p +1cghv22200-tbions	PDF
idq10 Contextual Info: PRELIMINARY CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is	Original	cghv22200 cghv22200f cghv22 ghv22200p +2cghv22200-tbions idq10	PDF
Contextual Info: CGHV22100 100 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22100 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22100 ideal for 1.8 - 2.2 GHz	Original	cghv22100 cghv22 ghv22100p	PDF
HEADER RT Abstract: CGH35120 Contextual Info: PRELIMINARY CGHV22100 100 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22100 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22100 ideal for 1.8 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is	Original	cghv22100 cghv22 ghv22100p cghv22100-tb +2header rt cgh35120	PDF
CGHV22100 Abstract: CGH35120 CGHV22 cree rf Contextual Info: PRELIMINARY CGHV22100 100 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22100 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22100 ideal for 1.8 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is	Original	cghv22100 cghv22 ghv22100p cghv22100-tb +2cgh35120 cree rf	PDF