IDQ10 Search Results

mg802c256q

Abstract: G802C256
Contextual Info: <♦ M G802C256 Ultra Low Latency, High Performance M o Sys’ 256Kx32 SGRAM Preliminary Inform ation !g§|oooooooooo|f Features DQ3_1 VccQr-12 DQ4 : 3 DQ5c: 4 VSSQ- □ 5 DQ6! 13 DQ7i 17 VccQ! 18 DQ16:- y DQ17 J 1U VssQ! I 11 DQ18: 12

mcac

Contextual Info: KM41 6C256DT ELECTRONICS CMOS D R A M 2 5 6 K x 1 6 B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

M54V16258

Contextual Info: O K I Semiconductor MSM54V16258B/BSL 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM54V16258B/BSL is a 262,144-word x 16-bit dynamic RA M fabricated in OKI's CMOS silicon gate technology. The MSM54V16258B/BSL achieves high integration,high-speed operation,and low-power

KM416S4020

Abstract: KM416S4020AT-G
Contextual Info: KM416S4020AT SDRAM ELECTRONICS 2M x 16Bitx 2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • Dual banks operation. • MRS cycle with address key programs.

GM72V281641A

Abstract: GM72V28
Contextual Info: Preliminary GM72V281641 AT/ALT L G S e m ic o n C o . , L t d . Description TheGM72V281641AT/ALT is a synchronous dynamic random access memory comprised of 134,217,728 memory cells and logic including input and output circuits operating synchronously by referring to the positive edge of the externally

Contextual Info: SHARP July 1996 / FLASH MEMORY LH28F400SUT-NC80 \ SHARP CORPORATION LHF40S62 # Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited