CGHV22200 Search Results

CGHV22200 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
CGHV22200F		Cree	RF FETs, Discrete Semiconductor Products, MOSF RF 125V 12A 2.2GHZ 440162	Original	PDF		12
CGHV22200-TB		Cree	RF FETs, Discrete Semiconductor Products, MOSF RF 125V 12A 2.2GHZ 440162	Original	PDF		12

CGHV22200 Price and Stock

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MACOM


MACOM CGHV22200-TB EVAL BOARD FOR CGHV22200
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	CGHV22200-TB	Bulk	1		1	1 $500.00 10 $500.00 100 $500.00 1000 $500.00 10000 $500.00	Buy Now
	CGHV22200-TB	Bulk			2	1 - 10 $500.00 100 $500.00 1000 $500.00 10000 $500.00	Buy Now

CGHV22200 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 - 2.2	Original	CGHV22200 CGHV22200 CGHV22200F CGHV22 GHV22200P	PDF
Contextual Info: PRELIMINARY CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is	Original	CGHV22200 CGHV22200 CGHV22200F CGHV22 GHV22200P	PDF
Contextual Info: CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 - 2.2	Original	CGHV22200 CGHV22200 CGHV22200F CGHV22 GHV22200P	PDF
CGHV22200 Contextual Info: PRELIMINARY CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is	Original	CGHV22200 CGHV22200 CGHV22200F CGHV22 GHV22200P CGHV22200-TBions	PDF
idq10 Contextual Info: PRELIMINARY CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is	Original	CGHV22200 CGHV22200 CGHV22200F CGHV22 GHV22200P CGHV22200-TBions idq10	PDF