FPD1050 Search Results

Rogers-4003

Abstract: CAPACITOR 33PF FPD1050SOT89 rogers 4003 26GHz LNA
Contextual Info: EB1050SOT89-AG FPD1050SOT89 2.6GHz LNA EVALUATION BOARD FEATURES Measured @ 2.6GHz • 25dBm Output Power • 16dB Gain ¥ 0.6dB Noise Figure ¥ 36dBm OIP3 measured at 12dBm per tone ¥ Bias Vd = 5V, Id = 80mA, Vg = -0.5V ~ -0.8V DESCRIPTION AND APPLICATIONS

FPD1050SOT89

Abstract: 20 ohm
Contextual Info: EB1050SOT89BA FPD1050SOT89 1.85GHz LNA EVALUATION BOARD FEATURES • • ¥ ¥ ¥ Measured @ 1.85GHz 24.5dBm Output Power 17.5dB Gain 0.65dB Noise Figure 36dBm OIP3 measured at 10dBm per tone Bias Vd = 5V, Id = 80mA, Vg = -0.5V ~ -0.8V DESCRIPTION AND APPLICATIONS

eb105

Abstract: FPD1050SOT89 VG sma
Contextual Info: EB1050SOT89BB FPD1050SOT89 0.9GHz LNA EVALUATION BOARD FEATURES • • ¥ ¥ ¥ Measured @ 900MHz 23.0dBm Output Power 22dB Gain 0.6dB Noise Figure 33.5dBm OIP3 measured at 10dBm per tone Bias Vd = 5V, Id = 80mA, Vg = -0.5V ~ -0.8V DESCRIPTION AND APPLICATIONS

Contextual Info: FPD1050 Datasheet v2.2 0.75W POWER PHEMT FEATURES: • • • • • LAYOUT: 28.5 dBm Linear O/p Power at 12 GHz 11 dB Power Gain at 12 GHz 14 dB Maximum Stable Gain at 12 GHz 41 dBm Output IP3 45% Power-Added Efficiency GENERAL DESCRIPTION: The FPD1050

TRANSISTOR A114 E

Abstract: FPD1050SOT89 FPD1050SOT89E MIL-HDBK-263
Contextual Info: FPD1050SOT89 Datasheet v2.1 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1.8GHZ : • • • • • • 26 dBm Output Power (P1dB) 17.5 dB Small-Signal Gain (SSG) 1.1 dB Noise Figure 40 dBm Output IP3 50% Power-Added Efficiency FPD1050SOT89E: RoHS compliant

FPD1050SOT89

Contextual Info: EB1050SOT89BC FPD1050SOT89 2.0GHz LNA EVALUATION BOARD FEATURES Frequency GHz P1dB (dBm) SSG (dB) N.F. (dB) OIP3 (dBm) Bias 1.95 2.0 23.5 23.6 16.3 16.4 0.8 0.85 36.0 37.0 5V, 80mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively

FPD1050

Abstract: FPD750 MIL-HDBK-263
Contextual Info: FPD1050 0.75W POWER PHEMT • • FEATURES ♦ 28.5 dBm Linear Output Power at 12 GHz ♦ 11 dB Power Gain at 12 GHz ♦ 14 dB Maximum Stable Gain at 12 GHz ♦ 41 dBm Output IP3 ♦ 45% Power-Added Efficiency SOURCE BOND PAD 2x DRAIN BOND PAD (2X) GATE

Filtronic Compound Semiconductors

Contextual Info: FPD1050SOT343 Preliminary Data Sheet LOW NOISE HIGH LINEARITY PACKAGED PHEMT FEATURES: • • • • • • RoHS PACKAGE 22 dBm Output Power P1dB 17 dB Gain at 1.85 GHz 0.7 dB Noise Figure at 1.85 GHz 33 dBm Output IP3 45% Power-Added Efficiency Useable Gain to 6 GHz

transistor A114

Abstract: FPD1050
Contextual Info: FPD1050 Datasheet v3.0 0.75W POWER PHEMT LAYOUT: FEATURES: • • • • • 28.5 dBm Linear O/p Power at 12 GHz 11 dB Power Gain at 12 GHz 14 dB Maximum Stable Gain at 12 GHz 41 dBm Output IP3 45% Power-Added Efficiency GENERAL DESCRIPTION: The FPD1050

FPD1050SOT89

Abstract: FPD1050SOT89E MIL-HDBK-263
Contextual Info: FPD1050SOT89 Datasheet v3.0 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1.8GHZ : • • • • • • 26 dBm Output Power (P1dB) 17.5 dB Small-Signal Gain (SSG) 1.1 dB Noise Figure 40 dBm Output IP3 50% Power-Added Efficiency FPD1050SOT89E: RoHS compliant

Contextual Info: FPD1050 FPD1050 0.75W Power pHEMT 0.75W POWER pHEMT Package Style: Bare Die Product Description Features The FPD1050 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx1050μm Schottky barrier gate, defined by highresolution stepper-based photolithography. The double recessed gate structure

FPD1050SOT89

Abstract: FPD1050SOT89E 941 LG
Contextual Info: FPD1050SOT89 FPD1050SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features at 2.0GHz The FPD1050SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It features a 0.25 mx1050μm Schottky

FPD1050

Abstract: MIL-HDBK-263 FPD1050-000
Contextual Info: FPD1050 FPD1050 0.75W Power pHEMT 0.75W POWER pHEMT Package Style: Bare Die Product Description Features The FPD1050 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx1050μm Schottky barrier gate, defined by highresolution stepper-based photolithography. The double recessed gate structure

Filtronic

Abstract: EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500
Contextual Info: FILTRONIC COMPOUND SEMICONDUCTORS PRODUCT CROSS-REFERENCE GUIDE DISCRETE UNPACKAGED DEVICES Note 1: Filtronic P/N Excelics FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B EPA120E EPA120A EPA080A EPA030C EPA018A EPA018A MwT MwT-PH15

VCO-102

Abstract: NBB-502 spf-5189 RF5643wda cxe-2089
Contextual Info: RFMD Product Selection Guide 2011 - 2012 Multiple Markets. Multiple Choices. One RFMD. ® Multiple Markets. Multiple Choices. One RFMD . ® RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high

rf3826

Abstract: SBB-3089 RFHA1000 spf-5189 spf-5189z SUF-9000 SPB-2054S RF2815 SBB-1089 rf3931
Contextual Info: 2009 RFMD Aerospace & Defense Product Selection Guide Robust Components for RF, Microwave, and Millimeter Applications Regarded as the partner of choice in the Aerospace, Defense, and Homeland Security industry, RFMD® has earned a global reputation with its product innovation, quality, scalability, and world-class customer support.

RF5632

Abstract: PNP-1090-P22 UMX-254-D16-G UMX-333-D16-G RF1194 UMX-406-D16 SPF-5043Z UMX-519-D16-G SHF-0289 spf-5122z
Contextual Info: 2009 RFMD Multi-Market Product Selection Guide Multiple Markets. Multiple Choices. One RFMD. RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high-performance RF components for a diverse range of applications and end markets. Our product

pnp-1500-p22

Abstract: UMZ-1147-R16-G RF5632 UMX-254-D16-G SPA-1002-27H UMX-119-D16-G spf-5189z ums-2000-A16-g spf-5122 UMX-406-D16
Contextual Info: 2009 RFMD Multi-Market Product Selection Guide Multiple Markets. Multiple Choices. One RFMD. RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high-performance RF components for a diverse range of applications and end markets. Our product