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    RF3826 Search Results

    RF3826 Datasheets (2)

    RF Micro Devices
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    RF3826PCBA-410
    RF Micro Devices RF Evaluation and Development Kits, Boards, RF/IF and RFID, RF EVAL FOR RF3826 PA Original PDF 14
    RF3826SR
    RF Micro Devices RF Amplifiers, RF/IF and RFID, RF AMP 9W 2.5GHZ Original PDF 14
    SF Impression Pixel

    RF3826 Price and Stock

    Littelfuse Inc

    Littelfuse Inc RF3826-000

    Gtcr38-601M-R20/ Tray |Littelfuse RF3826-000
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark RF3826-000 Bulk 1,000
    • 1 -
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    • 100 -
    • 1000 $6.29
    • 10000 $4.42
    Buy Now
    RS RF3826-000 Bulk 8 Weeks 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $5.87
    • 10000 $5.87
    Get Quote
    Onlinecomponents.com RF3826-000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.46
    • 10000 $2.46
    Buy Now
    Sager RF3826-000 1,000
    • 1 -
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    • 10000 -
    Buy Now

    RF3826 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor 1800MHz

    Abstract: r.f. amplifier 30mhz
    Contextual Info: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology


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    rf382630mhz2500mhztransistor 1800mhz+1r.f. amplifier 30mhz PDF

    rf3826

    Abstract: ERJ-3GEYJ821 ERJ-3GEYJ391 transistor 1800MHz
    Contextual Info: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology


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    rf382630mhz2500mhzerj-3geyj821+2erj-3geyj391transistor 1800mhz PDF

    404j

    Abstract: rf3826 transistor 1800MHz 100A0R9BT150X
    Contextual Info: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology


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    rf382630mhz2500mhz404j+2transistor 1800mhz100a0r9bt150x PDF

    EC 401 TRANSISTOR

    Abstract: Gan hemt transistor RFMD transistor 1800MHz
    Contextual Info: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology


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    rf382630mhz2500mhzec 401 transistor+2gan hemt transistor rfmdtransistor 1800mhz PDF

    transistor 1800MHz

    Contextual Info: RF3826 RF3826 9W GaN Wide-Band Power Amplifier 30MHz to 2500MHz The RF3826 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios, and general purpose amplification. Using an advanced high power density Gallium


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    rf382630mhz2500mhzds130927+1transistor 1800mhz PDF

    RF3826

    Abstract: Gan transistor
    Contextual Info: RF3826 Proposed 30 – 2500 MHz, 9W GaN WIDE-BAND POWER AMPLIFIER RoHS Compliant and Pb-Free Product Package Style: AlN Leadless Chip Carrier / SO8 Product Description Features ƒ Advanced GaN HEMT Technology ƒ Advanced Heat-Sink Technology The RF3826 is a wideband Power Amplifier designed for CW and


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    rf3826gan transistor PDF

    transistor 1800MHz

    Contextual Info: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology


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    rf382630mhz2500mhztransistor 1800mhz PDF

    transistor 1800MHz

    Contextual Info: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology


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    rf382630mhz2500mhztransistor 1800mhz PDF

    Contextual Info: TE Connectivity My Cart | My Part Lists | Sign In/Register English Change What can we help you find? Products Industries Resources About TE My Account Innovation Support Center Home > Products > Overvoltage Devices > Product Feature Selector > Product Details


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    rf38268x20us PDF

    UPC8236

    Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
    Contextual Info: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


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    upc8236mrfe6vpm74 7 segment displaymounting and soldering of rf transistors+6mobile jammer gsm 1800 mhz circuit diagramblf4g08ls-160arf amplifier mhz doherty 470-860rf transceiver 802.11acan10882m74 7 segment display input PDF

    VCO-102

    Abstract: NBB-502 spf-5189 RF5643wda cxe-2089
    Contextual Info: RFMD Product Selection Guide 2011 - 2012 Multiple Markets. Multiple Choices. One RFMD. ® Multiple Markets. Multiple Choices. One RFMD . ® RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high


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    vco-102nbb-502spf-5189rf5643wda+1cxe-2089 PDF

    BA 7891 NG

    Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104
    Contextual Info: 释放潜能 RF 手册第 16 版 高性能 RF 产品应用和设计手册 2012 年 6 月 恩智浦助您释放下一代 RF 和微波设计的潜能 恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进


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    prf957tff1003hntff1007hntff1014hn+16tff1015hntff1017hntff11070hntff11073hntff11077hntff11080hnba 7891 ngbts 2140 1btff1014blf4g08ls-160abf1107 spice modelbf862 spice modelrf transceiver 802.11acmultiple output lnb802.11acbgu6104 PDF

    RFHA1000

    Contextual Info: RFMD. High-Power GaN Power ICs RFMD’s GaN Power ICs PICs are wideband power amplifiers designed for continuous wave and pulsed applications such as military communications, electronic warfare, wireless infrastructure, radar, two-way radios, and general


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    rf3826rfha1000rfha1003rfha1006+1-40oc PDF

    Integrated Synthesizers with Mixers

    Abstract: Digital Step Attenuators 3G/4G Power Amplifiers CATV Amplifiers CATV Hybrid Amplifier Modules Gain Blocks Linear Amplifiers Low Noise Amplifiers Variable Gain Amplifiers WiFi Power Amplifiers
    Contextual Info: RFMD PRODUCT SELECTION GUIDE 2013-2014 Amplifiers Attenuators Modulators Switches Upconverters/Downconverters Voltage-Controlled Oscillators Synthesizers CATV Amplifiers and Tuners High Reliability Components Components for Cellular Applications Open Foundry Services


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    11f-bintegrated synthesizers with mixersdigital step attenuators3g/4g power amplifiers+7catv amplifierscatv hybrid amplifier modulesgain blockslinear amplifierslow noise amplifiersvariable gain amplifierswifi power amplifiers PDF

    6 pin TRANSISTOR SMD CODE CAA

    Abstract: TEA6721 BF991 spice model
    Contextual Info: RF マニュアル第 16 版 ハイパフォーマンスRF製品用のアプリケーション および設計マニュアル 2012年6月 NXPで次世代RFおよびマイクロ波設計のパフォ ーマンスがさらに向上 NXPの RF マニュアルは、


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    6 pin transistor smd code caatea6721bf991 spice model PDF