FLC087XP Search Results

FLC087XP Datasheets (2)

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Fujitsu

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FLC087XP		Fujitsu	GaAs FET & HEMT Chip	Original	PDF	54.62KB	4
FLC087XP-E1		Fujitsu	FET: P Channel: ID 0.45 A	Original	PDF	54.62KB	4

FLC087XP Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
FLC087XP Contextual Info: FLC087XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 28.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 31.5%(Typ.) Proven Reliability Drain DESCRIPTION The FLC087XP chip is a power GaAs FET that is designed for general	Original	flc087xp	PDF
GaAs FET HEMT Chips Abstract: Fujitsu 511 FLC08 Contextual Info: FLC087XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 28.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: hadd = 31.5%(Typ.) Proven Reliability Drain DESCRIPTION The FLC087XP chip is a power GaAs FET that is designed for general	Original	flc087xp fcsi0598m200 gaas fet hemt chips fujitsu 511 +1flc08	PDF
Contextual Info: FLC087XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 28.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 31.5%(Typ.) Proven Reliability Drain DESCRIPTION The FLC087XP chip is a power GaAs FET that is designed for general	Original	flc087xp	PDF
Contextual Info: FLC087XP - GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P-\|<jB = 28.5dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: r i ^ d = 31.5%(Typ.) Proven Reliability DESCRIPTION	OCR Scan	flc087xp fcsi0598m200	PDF
GaAs FET HEMT Chips Abstract: GaAs FET chip FLC087XP C-Band Power GaAs FET HEMT Chips Contextual Info: FLC087XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 28.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 31.5%(Typ.) Proven Reliability Drain DESCRIPTION The FLC087XP chip is a power GaAs FET that is designed for general	Original	flc087xp gaas fet hemt chips gaas fet chip c-band power gaas fet hemt chips	PDF
FLC087XP Abstract: FUJITSU RF 053 GaAs FET HEMT Chips Contextual Info: FLC087XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 28.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 31.5%(Typ.) Proven Reliability Drain DESCRIPTION The FLC087XP chip is a power GaAs FET that is designed for general	Original	flc087xp 17serve fcsi0598m200 fujitsu rf 053 +1gaas fet hemt chips	PDF
Filtronic Abstract: EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500 Contextual Info: FILTRONIC COMPOUND SEMICONDUCTORS PRODUCT CROSS-REFERENCE GUIDE DISCRETE UNPACKAGED DEVICES Note 1: Filtronic P/N Excelics FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B EPA120E EPA120A EPA080A EPA030C EPA018A EPA018A MwT MwT-PH15	Original	fpd3000 fpd2250 fpd1500 fpd1050 +11fpd750 fpd6836 fpd200 fpd7612 epa240b epa160b filtronic eudyna epa018a ph15 transistor flc087xp	PDF