DSEI 2X60 Search Results

IXYS DSEI 2x61-06C

Abstract: 2x61-06c ixys dsei 2x61 dsei 2x60
Contextual Info: Fast Recovery Epitaxial Diodes FRED VRSM VRRM V V 440 640 400 600 DSEI 2x61 IFAVM = 2x60 A VRRM = 400/600 V = 35 ns trr miniBLOC, SOT-227 B Type DSEI 2x61-04C DSEI 2x61-06C Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM

DSE112-06A

Abstract: dse112 30-1OA 805A 140-12DA DSEI 30-06A DSE112-06 2X30-06C FOR DSEI 2X61-04C dsei 2x60
Contextual Info: Fast Recovery Epitaxial Diodes FRED and FRED Modules lFAV = 8 - 305 A Typa VJM DSEI8-06A • DSEI 8-05A • DSEI 8-04A ► DSEI 12-12A DSEI 12-10A lm @ -dl/dt F ^ 'F Van ‘ r, 45'C max. typ. typ. 10 ms Tvjm = 150-C TVJ=250C TVJ = 100CC A A/^a A ns •C

ixys dsei 2x61-06C

Contextual Info: Mt a b PZ b D D G i a S 3 7 1 T • I X Y D I X Y S DSEI 2x61 Fast Recovery Epitaxial Diodes lFAV = 2x60 A VRRM = 400-600 V tn < 35 ns miniBLOC, SOT-227 B V V 440 540 640 400 500 600 2 • DSEI 2x61-04C DSEI 2x61-05C DSEI 2x61-06C 1 1 o-J H Ho 3 -« 4

FR 0169

Abstract: 2X61-06C
Contextual Info: Fast Recovery Epitaxial Diodes FRED DSEI 2x61 lFAVM = 2x60 A vRRM= 400/600 V trr vV RSM V rrm \_0 V 440 640 400 600 DSEI 2x61-04C DSEI 2x61-06C Test Conditions Maximum Ratings (per diode) V rm "*"vj = T/ jm T . = 70°C; rectangular, d = 0.5 tp < 10 us; rep. rating, pulse width limited by T vjm

ixys dsei 2x61

Abstract: DSEI 2X61-10B ixys dsei 2*61-10b
Contextual Info: Fast Recovery Epitaxial Diodes FRED VRSM V 1000 VRRM DSEI 2x61 IFAVM = 2x60 A VRRM = 1000 V = 35 ns trr miniBLOC, SOT-227 B Type V 1000 DSEI 2x61-10B Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular, d = 0.5

DSEI2*61-12

Abstract: dsei 2x60
Contextual Info: DSEI 2x61 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1000 1000 IFAVM = 2x60 A VRRM = 1000 V trr = 35 ns Type DSEI 2x 61-10P D5 Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM

Contextual Info: Fast Recovery Epitaxial Diodes FRED DSEI 2x61 IFAVM = 2x60 A vRRM= 1000 v trr — v RSM Type V rrm V V 1000 1000 Symbol 1 > miniBLOC, SOT-227 B 1 DSEI 2x61-10B Test Conditions Maximum Ratings (per diode) 'frm "^vj “ Tvjm Tc= 50°C; rectangular, d = 0.5

dsei 2x60

Abstract: IXYS DSEI 2X61 IXYS DSEI 2 ixys dsei IXYS DSEI 2X
Contextual Info: DSEI 2x61 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1000 1000 IFAVM = 2x60 A VRRM = 1000 V trr = 35 ns Type DSEI 2x 61-10P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM

ixys dsei 2x61

Abstract: dsei 2x60 IXYS DSEI 2 IXYS DSEI 2X 2x61
Contextual Info: DSEI 2x61 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 IFAVM = 2x60 A VRRM = 600 V trr = 35 ns Type DSEI 2x 61-06P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 70°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM

IXYS DSEI 2X121-02a

Abstract: ixys dsei 2x30-12b DSEI IXYS 2x31-12B ixys dsei 1x31-06c IXYS DSEI 2 DSEI 120-06A 1x31-06c dsei 2x60 IXYS DSEI 2X61-12B DSEI IXYS 2x31
Contextual Info: IXYS _ FRED Contents K Package style/Bauform Type Page ns 1b TO-252AA 1 TO-220 AC 1a TO-263AA 35 35 35 k \ 1a 2 TO-247 AD 2a TO-247 AD 2b ISOPLUS 247 3 SOT-227 B, miniBLOC new DSEI6-06AS DSEI 8-06A DSEI 8-06AS D1-2 D1-4 D1-4 35 50 50 40

ixys dsei 2*61-10b

Abstract: ATS1000 ixys dsei 12 IXYS DSEI 2X61-06
Contextual Info: 4bfl b22b 0001025 5T2 *IXY □IXYS Fast Recovery Epitaxial Diodes DSEI 2x61 IFAV V t miniBLOC, SOT-227 B v RSM V 640 800 1000 Sym bol V RRM 600 800 1000 2 OSEI 2x61-06B OSEI 2x61-08B DSEI 2x61-10B Ho Maximum Ratings per diode j. t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine

Contextual Info: •_4bßb22b 0 0 0 1 Ö2 S 5^2 M I X Y □IXYS Fast Recovery Epitaxial Diodes DSEI 2x61 lFAV = 2x60 A V rrm trr = 600-1000 V < 50 ns miniBLOC, SOT-227 B V v*» V 640 800 1000 600 800 1000 Type p ° ! 3 •- — Symbol Test Conditions 'frms *FAV* 1 Ifmi

Dsei 2x101-12A

Abstract: 2X121-02A DSEI 2*101-12A Dsei 2x101-06P 2X161-02P
Contextual Info: 2x60 ' 2x 160 V Typ e T Vju = 150-C ► N ew RAM V A _ _ _ 1 'fav @ T1c d=0.5 A ^FRMS *FSM 10 ms °C "^VJM A 4 5 °C A vF @ IF m ax. tfr typ . TVJ * 150°C V A T1VJ=25°C ns lR H @ -d i/d t TVJ = 100°C

DSE112-12

Abstract: DSE112-12A dse112 2x30-12b DSE119-06AS 500-06DA 250-12DA 300-06DA
Contextual Info: Fast Recovery Epitaxial Diodes FRED Ifav = 8 - 5 8 2 A Type *FSM TVjm = 150°C VJM A ► New 10 ms 45°C A Package style F max. "^VJM = typ. typ. T vj=25°C TVJ A ns 150°C A 100-C A/jis K/W 64 2.5 50 100 2.0 62 100 1.6 78 35 100 1.6 62 40 100 1.6 78 200

8n80

Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B
Contextual Info: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1

DSE112-12A

Abstract: DSE112-10A dse112 DSEI2X101-12A DSE1120-12A 2X31-12B DSDI60-18A DSE112-12 DSEI 120-06A DSDI60-16A
Contextual Info: Fast Recovery Epitaxial Diodes FRED lFAV= 8 - 582 A V RRM Type 1FAV @ T c TvJM= 150°C ^FRMS ^V JM ^FSM vF 10 ms 45°C A max. "^VJM @ lF lRM @ -di/dt K typ. typ. TVJ=25°C TVJ = 100°C ns A A/(is = 150°C ► New □SEI 8-06A V A °C A 600 8 115 16 100 1.3

Contextual Info: Fast Recovery Epitaxial Diodes FRED U , = 8 - 582 A V Type RRM 1 @ T1c 'FAV U rms vF *FSM 10 m s @ t rr 'f m a x. 4 5 °C Irm @ -d i/d t typ. T vjm = 1 5 0 °C V A V A °C ^"v JM A ► D S E I 6 -0 6 A S 600 6 125 16 65 1.3 8 35 2.5 D S E I 8 -0 6 A D S E I 8 -0 6 A S

DSE 130 -06A

Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
Contextual Info: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01

IXYS DSEI 2X121

Abstract: IXYS DSEI 2X121-02a 2x121-02a IXYS DSEI 2X61 DO-205 2X61-10B 110-12F dsei 2x60 110-16F 6206 sot 89
Contextual Info: DS 75 DSA 75 Rectifier Diodes Avalanche Diodes VRSM V BR min ① VRRM DSI 75 DSAI 75 VRRM = 800 - 1800 V IF(RMS) = 160 A I F(AV)M = 110 A DO-203 AB Anode Cathode on stud on stud C A V V V 900 1300 - 800 1200 DS 75-08B DS 75-12B DSI 75-08B DSI 75-12B 1300 1700

BERULUB FR 16 B

Abstract: circuit diagram of 5kw smps full bridge thyristor aeg UC3854 5kw harmer simmons BERULUB FR 16 Grease Berulub FR 16 Berulub FR 66 5kw smps pfc ups PURE SINE WAVE schematic diagram
Contextual Info: Reliability Reliability General Power semiconductors used in high power electronic equipment are exposed to different conditions compared to plastic encapsulated components applied in equipment used for communication electronics. Controlling and converting of high power

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches