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    DIODE E 2060 Search Results

    DIODE E 2060 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MGN1D120603MC-R7
    Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN PDF
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CUZ24V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Datasheet
    CUZ20V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, USC Datasheet

    DIODE E 2060 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TDA8808AT

    Abstract: 808T S028 TDA8808 TDA8808T LDT1 TA72 GCLF A2-255 lbgc
    Contextual Info: TDA8808T TDA8808AT PHOTO DIODE SIGNAL PROCESSOR FOR COMPACT DISC PLAYERS G E N E R A L D E S C R IP T IO N The TD A 8808 is a bipolar integrated circuit designed for use in compact disc players with a single spot read-out system. It amplifies the photo-diode signals and processes the error signals for the


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    TDA8808T TDA8808AT TDA8808 TDA8808T A8808AT 7110fl2b TDA8808AT 808T S028 LDT1 TA72 GCLF A2-255 lbgc PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF

    Contextual Info: I . I Bulletin 127091 rev.A 09/97 In te rn a tio n a l i r k . f i 1 2 . s e r i e s i q r Rectifier FAST THYRISTOR/ DIODE and INT-A-pak Power Modules THYRISTOR/THYRISTOR Features 112 A • F a s t tu rn -o ff th y ris to r ■ F a s t re c o v e ry d io d e


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    PDF

    2N1100 Power Transistor

    Abstract: DTG-2400 2n4280 germanium transistor pnp 2n277 2N2912 2n58a DTG2400 2N2567 2n1039 2N5435
    Contextual Info: TTTUTFE TTTÆWYrSTTJT^ CO TNC i fi4D D | 2 Û 4 fi3 5 2 □□□□141 7 " - 3 3 - off 3 f DIODE Tfldl\l515TQR CQ.,lf\JC. • “ J ~ 2011686-0400 • Telex: 139-365 * O u ts id e NY & NJ area c a ll t o l l f r e e 8005zs*4aai / g e r m a n iu M p n p h ig h p o w e r t r a n s i s t o r s


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    DDDD141 2N58A 2N1073 2N2158 2N5325 2N143/13 2N1073A 2N2158A 2N5435 2N174A 2N1100 Power Transistor DTG-2400 2n4280 germanium transistor pnp 2n277 2N2912 DTG2400 2N2567 2n1039 PDF

    2n3215

    Abstract: TO13 MT28 diode e 2060 2n2284 2N1042 2N1043 2N1044 2N1045 2N2556
    Contextual Info: DI O D E T R A N S I S T O R CO INC ~flM DE Ja àMfl35E D Q D O i n 2 8 4 8 3 5 2 D I O D E T R A N S I S T O R C O INC 84D 0 0 1 1 9 |~ D r- ,5 3 - 0 7 DIODE TRANSISTOR CO.INC. 201 686-0400 • Tela*: 139-385 • O u ts id e N Y & N J «rea c a ll T O L L F R E E 800-526-4581


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    2N2668 2N2669 2N2670 2N1042 2N1043 MT-27 MT-28 MT-28 2n3215 TO13 MT28 diode e 2060 2n2284 2N1044 2N1045 2N2556 PDF

    Contextual Info: XPTTM 650V GenX4TM w/ Sonic Diode IXXN110N65C4H1 Extreme Light Punch Through IGBT for 20-60kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 650V 110A 2.35V 30ns E SOT-227B, miniBLOC E153432 Ec Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


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    IXXN110N65C4H1 20-60kHz IC110 OT-227B, E153432 IF110 110N65C4 1-30-13-A PDF

    IVST5139

    Abstract: MT2060 MT2060A MT2061 MT2061A MT5139 MT5140 low leakage pico amp diode
    Contextual Info: MT5100-MT5103 MT5139,MT5140, MT2060, MT2060A MT2061, MT2061A / Microsemi Corp. fi íh p diode expens I SANTA ANA, CA F o r m o r e in f o r m a t i o n c a ll: 714 979-8220 FEATURES PICO AMP LOW LEAKAGE DIODES • Exhibits leakage currents approaching the theoretical bulk


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    MT5100-MT5103 IVST5139, MT5140, MT2060, MT2060A MT2061, MT2061A MIL-S-19500 MT5139, IVST5139 MT2060 MT2061 MT2061A MT5139 MT5140 low leakage pico amp diode PDF

    BH45-704A

    Abstract: BH 27 701A facon bd BH22-601A bl 44 704 facon facon bh 27 701 GB 44-706 facon bf facon VX230
    Contextual Info: FACON 45E D • 345b503 OOOOOlù 5 « F C N FACON SEMICONDUCTEURS/SEMICONDUCTORS T-23-0\ m ouldings m ou lages Vr r m Types V V RMS re c o m ­ m en d ed m ax (V) ■d on re­ sistive load s u r c h arg e résis tive *d s m / *fsm Ip per diode @ VR U se


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    345b503 T-230\ CB-356 C8-350 345b2D3 CB-349 CB-350 BH45-704A BH 27 701A facon bd BH22-601A bl 44 704 facon facon bh 27 701 GB 44-706 facon bf facon VX230 PDF

    2N1479

    Abstract: 2N1480 2N1481 2N1482 2N1700 2N5781 2N5782 2N5784 2N5785 2N5786
    Contextual Info: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863


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    O-39/TO-5 D00D1SS 515TQft 2N1479 2N1480 2N1481 2N1482 2N1700 2N5784 2N5785 2N5781 2N5782 2N5786 PDF

    KDA0216

    Contextual Info: 1.8mm TRI-LEVEL LED INDICATORS L-2060NA/3ID HIGH EFFICIENCY RED L-2060NA/3GD GREEN L-2060NA/3YD YELLOW L-2060NA/3SRD SUPER BRIGHT RED Features z TRI-LEVEL Description DESIGN. z DIFFERENT z BLACK z HIGH The High Efficiency Red source color devices are made


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    L-2060NA/3ID L-2060NA/3GD L-2060NA/3YD L-2060NA/3SRD KDA0216 SEP/17/2001 L-2060NA/3ID L-2060NA/3GD KDA0216 PDF

    smd TRANSISTOR code marking 2F

    Abstract: TRANSISTOR SMD MARKING CODE X D TRANSISTOR SMD MARKING CODE 2.T transistor smd code marking tm om SMD CODE MARKING SMD Transistor Marking Code Nt TRANSISTOR SMD MARKING CODE rd TRANSISTOR SMD MARKING CODE kh TRANSISTOR SMD MARKING CODE RE 34 transistor SMD MARKING CODE HF
    Contextual Info: PD -20602 rev. B 01/2000 HFA06TB120S. Series TM HEXFRED Ultrafast, Soft Recovery Diode Features BASE + 2 N/C Benefits VR = 1200V VF(typ.)* = 2.4V (K) • Ultrafast Recovery • Ultrasoft Recovery • Very Low IRRM • Very Low Qrr • Guaranteed Avalanche


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    HFA06TB120S. 116nC HFA06TB120S smd TRANSISTOR code marking 2F TRANSISTOR SMD MARKING CODE X D TRANSISTOR SMD MARKING CODE 2.T transistor smd code marking tm om SMD CODE MARKING SMD Transistor Marking Code Nt TRANSISTOR SMD MARKING CODE rd TRANSISTOR SMD MARKING CODE kh TRANSISTOR SMD MARKING CODE RE 34 transistor SMD MARKING CODE HF PDF

    Contextual Info: APTEK T E C H / A P T E K MICROSYS 5SE D • //eicapteKop^ ¿ a p te k aptey^ ÜÔ'ÎSITb 0 0 0 0 M Ô 3 f laptekaptek api* a p t e k t e c h n o l o g i e s , i n c . aptek <*jr V fi ■ A M S 2060 Active Termination Interface Circuit 1 J PRELIMINARY DESCRIPTION


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    671-BO01 PDF

    ISL9G2060EG3

    Abstract: ISL9G2060EP3 ISL9G2060ES3 TA49438
    Contextual Info: ISL9G2060EG3, ISL9G2060EP3, ISL9G2060ES3 Data Sheet [ /Title ISL9 G2060 EG3, ISL9G 2060E P3, ISL9G 2060E S3 /Subjec t (600V, SMPS II LGC Series NChann el IGBT) /Autho r () /Keyw ords (Intersi l Corpor ation, Semico nducto r 600V, SMPS II LGC Series NChann


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    ISL9G2060EG3, ISL9G2060EP3, ISL9G2060ES3 G2060 2060E ISLPG2060ES3 ISL9G2060EG3 ISL9G2060EP3 ISL9G2060ES3 TA49438 PDF

    L-2060YD

    Contextual Info: 1.8mm SOLID STATE LAMP L-2060YD YELLOW Features Description !1.8mm DIAMETER SMALL SIZE LED LAMP. The Yellow source color devices are made with Gallium ! ULTRA BRIGHTNESS IS AVAILABLE. Arsenide Phosphide on Gallium Phosphide Yellow Light !VERSATILE MOUNTING ON P.C. BOARD OR PANEL.


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    L-2060YD DSAA5506 NOV/12/2001 L-2060YD PDF

    L-2060ID

    Contextual Info: 1.8mm SOLID STATE LAMP L-2060ID HIGH EFFICIENCY RED Features Description !1.8mm DIAMETER SMALL SIZE LED LAMP. The High Efficiency Red source color devices are made ! ULTRA BRIGHTNESS IS AVAILABLE. with Gallium Arsenide Phosphide on Gallium Phosphide !VERSATILE MOUNTING ON P.C. BOARD OR PANEL.


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    L-2060ID DSAA5504 NOV/12/2001 L-2060ID PDF

    uln series

    Abstract: 2077B 2069B 2061M 2068B 2071b 2066B uln2068b 2076-B 2064B
    Contextual Info: SPRAGUE i n t e g r a t e d FA c i r c u i t s SERIES 2060 and 2070 DARLINGTON SWITCHES These devices are designed for a broad area of interface applications between low level/low current logic systems and high current loads such as relays, solenoids, motors,


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    ULN-2061M, ULN-2062M, ULN-2064B, ULN-2065B, ULN-2067B ULN-2066B) uln series 2077B 2069B 2061M 2068B 2071b 2066B uln2068b 2076-B 2064B PDF

    Contextual Info: INTERNATIONAL RECTIFIER IO R 73 De | m ö 5S452 0007151 0 I Data Sheet No. PD-3.171 in t e r n a t io n a l , r e c t if ie r S52KF SERIES 400-200 VOLTS RANGE STANDARD TURN-OFF TIME 10 fjs 2060 AMP RMS, RING AMPLIFYING GATE INVERTER TYPE HOCKEY PUK SCRs VOLTAGE RATINGS


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    5S452 S52KF S52KF4B. 000715b PDF

    Contextual Info: Bulletin PD-20606 rev. C 07/06 30CTQ. 30CTQ.S 30CTQ.-1 SCHOTTKY RECTIFIER 30 Amp IF AV = 30Amp VR = 80-100V Description/ Features Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangular 30 A 80 - 100 V IFSM @ tp = 5 s sine


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    PD-20606 30CTQ. 30Amp 0-100V O-220 O-262 PDF

    30CTQ80-1

    Abstract: 30CTQ100 30CTQ 30CTQ100-1 30CTQ100S 30CTQ80S 40HF
    Contextual Info: Bulletin PD-20606 rev. B 01/04 30CTQ. 30CTQ.S 30CTQ.-1 SCHOTTKY RECTIFIER 30 Amp Description/ Features Major Ratings and Characteristics Characteristics Values Units IF AV Rectangular 30 A 80 - 100 V IFSM @ tp = 5 µs sine 850 A VF 0.67 V This center tap Schottky rectifier series has been optimized


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    PD-20606 30CTQ. 12-Mar-07 30CTQ80-1 30CTQ100 30CTQ 30CTQ100-1 30CTQ100S 30CTQ80S 40HF PDF

    Contextual Info: Bulletin PD-20606 rev. B 01/04 30CTQ. 30CTQ.S 30CTQ.-1 SCHOTTKY RECTIFIER 30 Amp Description/ Features Major Ratings and Characteristics Characteristics Values Units IF AV Rectangular 30 A 80 - 100 V IFSM @ tp = 5 µs sine 850 A VF 0.67 V This center tap Schottky rectifier series has been optimized


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    PD-20606 30CTQ. 08-Mar-07 PDF

    Contextual Info: DISCRETE SEMICONDUCTORS PBYR20100CT series Schottky Barrier rectifier diodes Product specification File under Discrete Semiconductors, SC02 August 1992 Philips Semiconductors PHILIPS ^ 53^31 □ □ 3 2 cJcj a 23s P h ilip s Sem icon du cto r? P ro d u c ts


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    PBYR20100CT S3R31 PDF

    Diode 10Z

    Abstract: 4H26 Diode 20Z CNY47A 4N2b h11ag3 OPTEK 4N36 CNY51 B11D3 CNY17
    Contextual Info: OPTEK TECHNOLOGY INC DU AL-IN -LINE "fib PACKAGE DEj| bTTñSñD □□□□□ME 7 f i IS O L A T O R S Below listed optoisolators are available in surface mount design. Specify suffix SMA. low profile or SMB (standard profile). P H O T O T R A N S IS T O R


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    CNY17 CNY47 CNY47A CNY51 H11A2 H11A3 B11A4 Diode 10Z 4H26 Diode 20Z CNY47A 4N2b h11ag3 OPTEK 4N36 CNY51 B11D3 PDF

    PIN DIODE

    Abstract: MA8334 MA8334-200
    Contextual Info: MA8334 Series RF M ultithrow PIN Diode Switch Modules Features • SP2T AND SP3T DESIGNS ■ HIGH POWER CAPABILITY UP TO 1 kW OF CW ■ LOW DISTORTION ■ HIGH RELIABILITY ■ FREQUENCY RANGE FROM 10 MHz TO 1 GHz ■ LOW INSERTION LOSS ■ HIGH ISOLATION


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    MA8334 PIN DIODE MA8334-200 PDF

    BAT54S application note

    Abstract: 7205A CH7008A 7003B CH7005C 7019B ch7015a 7004C 7005C 70xx
    Contextual Info: AN-38 Chrontel CHRONTEL CHRONTEL CHRONTEL Application Notes TV-Out Connection with CRT Discharge Protection Introduction This application note is applicable to 70xx and 720x S-Video, Composite and SCART Video family. This recommendation takes precedence over the same information presented in the datasheets.


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    AN-38 BAT54S application note 7205A CH7008A 7003B CH7005C 7019B ch7015a 7004C 7005C 70xx PDF