2N369 Search Results

Contextual Info: * TO-92 Piastic Package Transistors NPN Maximum Ratings Type No. Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Po 'c (V). (A) Min @Tc=25°c 'c& (mA) NF Freq c„ CDIL (dB) (MHz) (PF) Case Max Max Style V cbo ^CEO (V) Min (V) Min 2N3693

Contextual Info: 2N3698 Transistors P-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)30 I(D) Max. (A)250u I(G) Max. (A) Absolute Max. Power Diss. (W)7.5m¥ Maximum Operating Temp (øC)200þ I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

Contextual Info: 2N3694 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)30m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)50uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.

Contextual Info: ., {Jna. TELEPHONE 979 376-2992 (212) 227-6008 20 STERN AVE. SPRINGFIELD. NEW JERSEY 07081 FAX: (973)3764980 U.SA 2N3691 NPN SMALL SIGNAL GENERAL PURPOSE AMPLIFIER PHYSICAL DIMENSIONS In.iccoid.incc wilh JCDLC (10-lOG) outline MAX. ABSOLUTE MAXIMUM RATINGS [Note 1]

2N3690

Contextual Info: 2N3690 Bipolar NPN UHF/Microwave Transisitor 2.29 Transistors UH. 1 of 2 Home Part Number: 2N3690 Online Store 2N3690 Diodes Bipo lar NPN UHF / M icro w av e Trans is it o r Transistors Enter code INTER3 at

2N601

Abstract: TA761 asy26 2n6365 AC188K Low-Power Germanium PNP 2N3371 2N3280 2N369 MXO55GA-4C-20.25M
Contextual Info: LOW-POWER GERMANIUM PNP Item Number Part Number 10 15 20 25 30 35 40 2S8186 2Nl129 TA81 TA81 TA81 2S8486 MA1705 MA1705 AC188K AC188K AC188K 2N3371 ACl15 AC154 AC156 ACl13 ASY82 ASY83 TI384 UPI404 2N310 2N215 2N369 2N499 TA761 TA761 TA761 2N2095 2N2964 2N2965

Contextual Info: 2N3690 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)30m Absolute Max. Power Diss. (W)500m’ Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)20

Contextual Info: 2N3697 Transistors P-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)30 I(D) Max. (A)600u I(G) Max. (A) Absolute Max. Power Diss. (W)18m¥ Maximum Operating Temp (øC)200þ I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

Contextual Info: 2N3696 Transistors P-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)30 I(D) Max. (A)1.5m I(G) Max. (A) Absolute Max. Power Diss. (W)45m¥ Maximum Operating Temp (øC)200þ I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

2n3877 transistor

Abstract: TRANSISTOR 2n3901 2N3693 2N3694 2N3704 2N3705 2N3708 2N3709 2N3710 2N3794
Contextual Info: * TO-92 Piastic Package Transistors NPN Maximum Ratings Type No. Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) NF Freq c„ CDIL (dB) (MHz) (PF) Case Max Max Style V cbo ^CEO (V) Min (V) Min 2N3693 45 45 4 0.625 0.5 0.05 35 40 160

Contextual Info: 2N3695 Transistors P-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)30 I(D) Max. (A)3.7m I(G) Max. (A) Absolute Max. Power Diss. (W)112m¥ Maximum Operating Temp (øC)200þ I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

2SC1815GR

Abstract: 2SC1815BL 2N3693 2SC1815-GR 2SC1815-BL 2N5209 2N5210 2N5232 2N5232A 2SC1815
Contextual Info: TO-92 PLASTIC PACKAGE TRANSISTORS NPN Typ* No. 2N5209 VC80 VCE0 VEBO (V) Mn (V) Min (V) Min 50 50 5 'cso (UA) Max 0.050 VC8 (V) hFE Min 35 50 50 5 0.050 35 9 Max Cob 'c & VCE VCE(SH| ®^BE (Sal) ® •c Ices 0 vce (mA) (uA) (V) (mA) (V) (V) (V) (Pf) Min Max

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2N3568

Abstract: 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224
Contextual Info: J325835_4 ADVANCED SEMICONDUCTOR SILICON A D V A N C E D TRANSISTORS SEMICONDUCTOR P D @ T c = 25°C DEVICE TYPE NO. POLARITY 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N478 2N479 2N479A 2N480 2N480A 2N541 2N542 2N543 2N545

TIL78

Abstract: til78 phototransistor L44A BFX82 K1504 MT101B P1028 phototransistor OCP71 transistor k1502
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

2N3563

Abstract: 2N5133 2N3638 2N3644 2N3645 2N5132 2N3638A 2N3702 to 106 2n5133 2N5088
Contextual Info: CENTRAL SEMICONDUCTOR 1989963 CENTRAI. SEMICONDUCTOR DE | n f H T b B 00D0S15 H 61C 00212 t>l NPN EPOXY - LOW NOISE LEVEL AMPLIFIER Cont'd. X a Vcb V CE V EB hFE at •c V CE V V V min max mA V 2N5088 2N5089 2N5127 2N5131 2N5133 30 25 20 20 20 30 25 12 15

P1027

Abstract: 2N3379 P1069E SD5011 UC-41 2N4088 K1502 RN1030 1203 6d ML111B
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

2N3638

Abstract: 2N4121 2N4945 TO-106 2N4122 SE1001 2N5855
Contextual Info: TRANSISTORS—SMALL SIGNAL NPN GENERAL PURPOSE AMPLIFIER AND SWITCHING TRANSISTORS BY ASCENDING VCEO PLASTIC PACKAGE Continued (ALSO SEE LOW LEVEL AN D HIGH VOLTAGE SECTION) V CEO SZ cc LU O > (hfe) LU LL V CE(sat) Cob fT PD ^off MHz ns mA MAX MIN MAX mW

JAN2N760A

Abstract: 2N3692 2n2510 2N3565
Contextual Info: N PN Transistors low I vel amps TVpe Case No Styla VCEO "eso IV! IV! M,n MIn IV! [ M,n Vcso MIn MIX VCEI . t VSEI .t! IV! 80 IV! Ma. NF Cob IpF! IdS! MIX Ma. Ma. 06 1.1 10 50 1 1 Test CondItIon Process No. 2N760 TO•18 45 45 200 30 76 333 1 5 2N760A TO'18

2N2606

Contextual Info: » M © ? ©ÄY£\[L© P -C H A N N E L J U N C T IO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > A Aluminum 12,000 Backside Contact: 3,000 À Gold ASSEM BLY RECOMMENDATIONS 016" (0.406mm It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

2N2606

Abstract: 2N3376 2N3378 2N3698 2N2608 2N3695
Contextual Info: -Ætttron Devices, Inc. P -C H A N N E L J U N C T IO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > A Aluminum 12,000 Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS _ .016" _ 0.406mm It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.

2N3565

Abstract: 2N3692
Contextual Info: Low Level and General Purpose Amplifiers TY PE POLA ­ NO. RITY CASE M A XIM UM RATINGS HFE Pd IC VCEO mW (mA) 00 min max (T Cob N.F. IC VCE V CE(sat) max IC min max max (mA) (V) (V) (mA) (M Hz) (M Hz) (dB) 120+ 12 12 12 10 10 - 120+ 120+ 120+ 120+ - 10