FL3BFLB05 Search Results

Contextual Info: S0LITR0N devices INC ELEMENT NUMBER : at DE |fl3bflb05 o o o s s b ? 1 T o tz VERY HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR FO R M E R L Y 40 CONTACT M ETALLIZATIO N Base and emitter: > 30.000A Aluminum Collector: Gold (Chrome Silver also available

Contextual Info: 8368602 SOLITRON DEVICES *Æ siÈran Devices. Inc. TS INC 95D 02 918 DE |fl3bflb05 □□DS'llfl 1 | ~ MEDIUM VOLTAGE, FAST RECO VERY PN EPITAXIAL FAST RECO VERY PLAN AR POWER DIODE CHIP NUMBER CONTACT METALLIZATION Anode: > 50,000 A Aluminum Cathode: Gold

2N2606

Contextual Info: » M © ? ©ÄY£\[L© P -C H A N N E L J U N C T IO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > A Aluminum 12,000 Backside Contact: 3,000 À Gold ASSEM BLY RECOMMENDATIONS 016" (0.406mm It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.

2N5531

Abstract: SOLITRON 10MHZ 2N5527 BR100A BR101A SOLITRON DEVICES
Contextual Info: SOLITRON DEVICES INC ' T^ 3 S~o5' DeTJ fl3bflb02 DDDnst. b _ RADIATION RESISTANT NPN SILICON POWER TRANSISTORS BR100A BR101A NPN SILICON POWER TRANSISTORS RADIATION RESISTANT 5 AMPERES FEATURES MEDIUM POWER RADIATION EXPOSURE L E V E L TO 3 x10 l4 n /C m 2

solitron devices

Contextual Info: SOLITRON DEVICES INC bl » F | fl3t,flbD2 D D D m 3 a 3 | ~ 836860 2 SOL ITRON DEV ICES INC _ 61C 01432 - A H 7 =7 7 - 6 9 - Bfi/P type no. C B c r / O f 5 GROUP A AND/OR PERFORMANCE CHARACTERISTICS NO. SYMBOL CONDITIONS 1 vS 2 PisJ 3 <L 4 JzCEQ