FL3BFLB02 Search Results

Contextual Info: MÖE T> m SOLITRON DEVICES INC fl3bflb02 GGG37Ö1 3bb « S O D T-sg-iH 3 CvdOLITRON DEVICES PRODUCT SPECIFICATION cust. DWG -24 VOLT REGULATOR | 2% 1 sì _ I I C LASS 0 C to +70°C Ge ne r al Purpose REV . - D E V IC E M A R K IN G ST A N D A R D ial S

2N5531

Abstract: SOLITRON 10MHZ 2N5527 BR100A BR101A SOLITRON DEVICES
Contextual Info: SOLITRON DEVICES INC ' T^ 3 S~o5' DeTJ fl3bflb02 DDDnst. b _ RADIATION RESISTANT NPN SILICON POWER TRANSISTORS BR100A BR101A NPN SILICON POWER TRANSISTORS RADIATION RESISTANT 5 AMPERES FEATURES MEDIUM POWER RADIATION EXPOSURE L E V E L TO 3 x10 l4 n /C m 2

diode t95

Abstract: SOLITRON Solitron product catalog SOLITRON DEVICES
Contextual Info: SOLITRON DEVICES INC Jfatltron 4AE T> m fl3bflb02 D003b03 T'iS « S O D ULTRA FAST RECOVERY RECTIFIERS 500V, 6 A , 35ns MAXIMUM RATINGS PER DIODE SYMBOL PARAMETER WORKING PEAK VRRM REVERSE VOLTAGE AVERAGE FORWARD CURRENT IF A V PEAK ONE CYCLE IFSM NON-REPETITIVE.

Contextual Info: SOLITRON DEVICES INC 48E D • CATALOm PRODUCT fl3bflb02 00G353b SSO « S O D _ J fO lltr a n devices. inc. N-CHANNEL ENHANCEMENT MOS FET 100V, 25A, o. ion 5DF140 SDF140 SDF140 JAA JAB JDA FEATURES • • • • • • • • RUGGED PACKAGE

Contextual Info: MAE J> m SO LIT RO N DEVICES INC ics r a m i rs\n iirr-ir fl3bflb02 OGDBSflM SG3 « S O P Q A T Ä L O Q _ P-CHANNEL ENHANCEMENT MOS FET -100V.-12A. o.3n JAA JAB SDF9130 SDF9130 FEATURES • RUGGED PACKAGE HI-REL CONSTRUCTION • CERAMIC EYELETS

SOLITRON

Abstract: 734 10 pins
Contextual Info: SOLITRON DEVICES INC Joiitron {¿PtSft MAE » ^ , • jKffifc''tfSP.SJS« fl3bflb02 □ □ □ 3 S R C1 734 « S O D p ro d u c t catalog ULTRA FAST RECOVERY RECTIFIERS MAXIMUM RATINGS PER DIODE PARAMETER 7-03-/? 100V. UNITS SYMBOL 3 0 A , 50ns 100 V AVERAGE FORWARD CURRENT IF AV

Contextual Info: raOEXyXgTT ÄTFÄ[L N - C H A N N E L J U N C T IO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > A Aluminum 12,000 Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS .019" (0.483mm It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2% .

Contextual Info: PRODUCT CâTâLO i Æ lltro n N-CHANNEL ENHANCEMENT MOS FET 90 0V, 11A, 0.95D SDF11N90 GAF FEATURES • • • • • • • • SCHEMATIC <§> TERMINAL G <§H <D ABSOLUTE MAXIMUM RATINGS PARAMETER 1 GATE 2 DRAIN 3 SOURCE STANDARD BEND CONFIGURATIONS SYMBOL

Contextual Info: PRODUCT CÂTÂLO' Æutron POSITIVE REGULATOR, FIXED SDP7812A SDP7812A SDP7812A JAA JAB JDA PARAMETER RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS:JAA.JAB LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE OPTIONAL MIL-STD-883

Contextual Info: PRODUCT Æ lltro n DEVICES.INC. 3301 ELECTRONICS UAY • WEST PALM BEACH, FLORIOA 334074 TEL: 407 848-4311 • TLX: SI-3435 • FAX: (407) 863-5946 N~CHANNEL ENHANCEMENT MOS FET 1000V, ABSOLUTE MAXIMUM RATINGS PARAMETER UNITS SYMBOL D r a i n - s o u r ce Vo 1t .(1)

F 407 Diode

Abstract: SDS30045 N 407 Diode
Contextual Info: PRODUCT CATTAIL « Æ lltron SCHOTTKY POWER RECTIFIERS 45V, 30A, 0.80V 5DS30045 SDS30045 SDS30045 5D530045 SDS30045 SDS30045 FEATURES • • • • • • • • JAA JAB JEA JEB JEC JED RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS

SDF034

Contextual Info: Æ litron 330! E L E C T R O N I C S WAY, TEL: 407 848-4311 PRODUCT DEVICES,INC. W E S T P A L M BEACH, F L O R I D A 3 3 4 0 7 FA X: (407) 8 6 3 - 5 9 4 6 N -C H A N N E L ENHANCEM ENT MOS F E T ABSOLUTE MAXIMUM RATINGS PARAMETER Total 60V, SYMBOL D r a i n - s o u r c e Vo I t .(1)

Contextual Info: C ÂTALO _ Æ ï llt r o n nn,cr, POSITIVE REGULATOR, ADJUSTABLE JAA JAB JDA ABSOLUTE MAXIMUM RATINGS FEATURES • • • • • • • • PARAMETER SYMBOL TOTAL POWER DISSIPATION PD INPUT TO OUTPUT VOLTAGE DIFFERENTIAL RUGGED PACKAGE HI-REL CONSTRUCTION

SOLITRON DEVICES

Abstract: SOLITRON TH40 JIS73
Contextual Info: SOLITRON DEVICES INC fll 8368602 SO LITRON DEVICES INC 81C 02241 D e | flBLflbOS 0005S41 1 | D 0 ~f~ 71' fi ' i I D & F L & C T /0 < / TVPg NO. GROUP •NO, A AND/O R SYMBOL S a£ X in i S . S A h . f s 3 K *F £ 4 5 f l e r . T /Ò 3 C H A R A C T E R IS T IC S

BDY39

Abstract: Scans-0078762 B-30 B-31 solitron devices blx BLX83 BD 104 NPN 185BD BDY38
Contextual Info: - ^ o —— • _ _ SOLITROIM DEVICES INC [ ^ G W © ? © Ä 1T M TS dF | ä H b öb D S 0D D S7fib D | ^ T ’ J 3 ' û i . © 1

kk3819

Abstract: kk4223
Contextual Info: T -3 5 -2 5 ' sod Ô3bflbü2 DÜDBbflD S4T 4ÖE D SOLITRON DEVICES INC A T M , © L O W P O W E R FIELD E F F E C T T R A N S I S T O R S m m /M L •BVDgo o: BVgss Case Min Type Style Numbei T O - I Geometi ? (V 18 FN22.2 50 2N3066 2N3067 18 FN22.2

Contextual Info: Ä T TÄ tL N -C H A N N E L J U N C T IO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum . 020 " 0.508mm Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS .015" (0.381mm) It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.

Contextual Info: re [D U J © Y © Ä T C M X P -C H A N N E L J U N C T IO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > A Aluminum 12,000 Backside Contact: 3,000 À Gold ASSEM BLY RECOMMENDATIONS .029" (0.737mm) It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.

Contextual Info: ^TT^[L L O W P O W E R F IE L D EFFEC T T R A N S IS T O R S L@W M@0©i Type Number C ase Style ( T O - Geometry BVgss Min (V) Ciss Max (pF) Crss Max (pF) Vgs (off) Min Max (V) lgss Max (nA) Yls Min Max (uMhos) Idss Min Max (mA) Yos Max (uMhos) 2N3684

0p07cp

Abstract: 0P07C 0P-07Cp op 07 op amp 0P07CJ 0P-07C 0P07CZ 0P07CS 0p07 op07 metal type
Contextual Info: SOLITRON DEVICES INC flb D e flBbflbOS OOOSSDS T Jlf-79-06^10 I ! . . . . OPERATIONAL AM PLIFIERS Bolitron D E V I C E S , I N C h t l o p -07 . • ■ ■ ■ « W ■ W l H I-TEC H LIN E A R ULTRA-LOW OFFSET VOLTAGE OPERATIONAL AMPLIFIER GENERAL DESCRIPTION