2N649 Search Results

2N6488G

Contextual Info: 2N6487, 2N6488, NPN 2N6490, 2N6491 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. http://onsemi.com Features 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

2N6490

Abstract: 2N6487
Contextual Info: Product Specification www.jmnic.com 2N6487 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2N6490 APPLICATIONS ・It is intended for use in power linear and low frequency switching applications PINNING PIN DESCRIPTION

1N5825

Abstract: 2N6497 MSD6100
Contextual Info: ON Semiconductor High Voltage NPN Silicon Power Transistors 2N6497 . . . designed for high voltage inverters, switching regulators and line–operated amplifier applications. Especially well suited for switching power supply applications. 5 AMPERE POWER TRANSISTORS

Contextual Info: 0043592 A P I ELECTRONICS INC A P I 26C 00234 ELECTRONICS INC 2b D » F | d D4 3 S c12 D 00 0 2 3 4 b COLLECTOR CURRENT = 15 AMPS NPN TYPES - CONTINUED Device No C ase 2N6496 2N6579 2N6580 2N6581 2N6582 2N6583 2N6584 2N6585 TO-3 T O -3 TO-3 TO-3 TO-3 TO-3

2N6497

Abstract: 2N6499 2N6498
Contextual Info: 2N6497,2N6498,2N6499 NPN ACTIVE-REGION SAFE OPERATING AREA SOA Ic , COLLECTOR CURRENT (Am p) There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate Ic- V ce

2N6491

Abstract: 2N6488 2N6489 2N6490 2N6486 2N6487 N648 407f N6486
Contextual Info: Æ & M O S P E C COMPLEMENTARY SILICON PLASTIC PNP 2N6489 2N6490 2N6491 NPN 2N6486 2N6487 2N6488 POWER TRANSISTORS . designed for use in general-purpose amplifier and switching applications. FEATURES: * Collector-Emitter Sustaining VoltageV c e o s u s = 40 v Min) -2N6486, 2N6489

U3540

Abstract: 2n5039
Contextual Info: 2N5038, 2N5039, 2N6496 HARRIS SEMICOND SECTOR File Number SbE ]> • 698 43G2271 GD4044fl STI H H A S High-Current, High-Power High-Speed Silicon N-P-N Planar Transistors lz z 32'-‘/3 Devices for Switching and Amplifier Circuits in Industrial and Commercial Applications

2N6488 MOTOROLA

Abstract: 2N6487 1N5825 2N6488 2N6490 2N6491 MSD6100
Contextual Info: MOTOROLA Order this document by 2N6487/D SEMICONDUCTOR TECHNICAL DATA NPN 2N6487 2N6488 * PNP 2N6490 2N6491* Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. • DC Current Gain Specified to 15 Amperes —

BUW23

Contextual Info: M U L T IE P IT A X IA L P LAN A R - TO -3 c o n tin u e d NPN BUX41 , BUX41N BUX42 2N5038 2N5039 2N5671 2N5672 2N6032 2N6033 2N6354 2N6496 ' to« Vcio (V) Veto (V) lc (*) P» (W) 250 220 300 150 120 120 150 120 150 150 150 200 160 250 90 75 90 120 90 120

MIL I 23659

Abstract: 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2n3198 transistor transistor 24405
Contextual Info: Microsemi PNP Transistors TIP42 TIP42A TIP42B TIP42C 2N6666 2N6667 2N6668 2N3171 2N3172 2N3173 2N3174 2N6049 2N3183 2N3195 2N3184 2N3196 2N3185 2N3197 2N3186 2N3198 2N6040 2N6041 2N6042 2N6489 2N6490 2N6491 2N3163 2N3164 2N3165 2N3166 2N3175 2N3187 2N317B

Contextual Info: 2N649/22 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)18 V(BR)CBO (V)20 I(C) Max. (A)50m Absolute Max. Power Diss. (W)180m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)14uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.65 h(FE) Max. Current gain.

Contextual Info: 2N649/5 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)20 I(C) Max. (A)50m Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC)75’ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.65 h(FE) Max. Current gain.

Contextual Info: £ Z T SGS-THOMSON ^7# 2N6497 2N6498-2N6499 HIGH VOLTAGE POWER SWITCH DESCRIPTIO N The 2N6497/98/99 are silicon multiepitaxial mesa NPN transistors in Jedec TO-220 plastic package particularly intended for switch-mode applications. ABSOLUTE MAXIMUM RATINGS

LB 137 transistor

Contextual Info: 2N6497 SILICON NPN POWER TRANSISTOR PACKAGE STYLE TO - 220AB DESCRIPTION: DIMENSIONS The 2N6497 is Designed for High Voltage, High Speed, Power Switching Applications. mm min MAXIMUM RATINGS 5.O A 1O A PEAK le |b 2.O A VeE 25O V Pd i s s Tj 8O W @ Te " 25 0C

25A1075

Abstract: 2N6497 2N6498 2N6499
Contextual Info: 2N6497 2N6498 2N6499 cen trai Central semiconductor Corp. Central semiconductor Corp. ♦I NPN SILICON POWER TRANSISTOR JEDEC TO-220 CASE 1 4 5 A dam s Avenue Hauppauge, New Y ork 11 7 8 8 DESCRIPTION The CENTRAL SEM ICONDUCTOR 2N 6497, 2N6498, 2N 6499 types are Silicon NPN Power Transistors

2N6530

Abstract: MJE700T
Contextual Info: Power Transistors TO-220 Case Continued TY P f NO, 1C m MW PNP PD m MAX BVépo BVCtO m VCE(SAT) @ 1C h re (A) m m m MB MAX (V) (A) fT (MHz) Iflffcl mnf MAX 2N6497 5.0 80 350 250 10 75 2.5 5.0 5.0 5.0 2N6498 5.0 80 400 300 10 75 2.5 5.0 5.0 5.0 2N6499 5.0

Contextual Info: mI m J E L E C T R O N IC S , INC. |-17 COLLECTOR CURRENT = 15 AMPS NPN TYPES VCEO sus Volts v CBO Volts 2N3055 JA N 2N3055 JT X 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 TO -3 TO -3 100

Contextual Info: 2N6497 High Voltage NPN Silicon Power Transistors These devices are designed for high voltage inverters, switching regulators and line−operated amplifier applications. Especially well suited for switching power supply applications. http://onsemi.com Features

Contextual Info: 2N6497 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)250 V(BR)CBO (V)350 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)80# Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition)350 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)2.5

Contextual Info: 2N6491 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)90 I(C) Max. (A)15 Absolute Max. Power Diss. (W)30# Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition)40 V(CE)sat Max. (V)3.5 @I(C) (A) (Test Condition)15

Contextual Info: 2N6499 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)350 V(BR)CBO (V)450 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)80# Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition)450 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)2.5

Contextual Info: 2N6493 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)70 V(BR)CBO (V)100 I(C) Max. (A)15 Absolute Max. Power Diss. (W)100# Maximum Operating Temp (øC)150õ I(CBO) Max. (A)700u° @V(CBO) (V) (Test Condition)35 V(CE)sat Max. (V)3.5 @I(C) (A) (Test Condition)10

2N6488G

Abstract: 2N6491 power circuit other part number 1N5825 2N6487 2N6487G 2N6488 2N6490 2N6490G 2N6491 MSD6100
Contextual Info: 2N6487, 2N6488, NPN 2N6490, 2N6491 (PNP) 2N6488 and 2N6491 are Preferred Devices Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. http://onsemi.com Features 15 AMPERE

2N3055

Abstract: 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882
Contextual Info: mI m J E L E C T R O N IC S , INC. |-17 COLLECTOR CURRENT = 15 AMPS NPN TYPES VCEO sus Volts v CBO Volts 2N3055 JA N 2N3055 JT X 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 TO -3 TO -3 100