2N6533 Search Results

s43a

Abstract: 2N6533 2N6531 2N6530 2N6532 1000 watts schematic diagram of solid state audio amplifier RCA 0798 2N6532 RCA A09 monolithic amplifier
Contextual Info: 3Ö750Ö1 DQ17HS3 0 | } .u a rn n g io n P o w e r Transistors File Number 873 2N6530, 2N6531, 2N6532, 2N6533 8-Ampere N-P-N Darlington Power Transistors 80, 100, 120 Volts, 60 Watts Gain of 1000 at 5 A 2N6530, 2N6532 Gain of 1000 at 3 A (2N6533) Gain of 500 at 3 A(2N6531)

2N6533

Abstract: Ha 100b 2cs24 2n651
Contextual Info: HARRI S S E I U C O N D S E CT OR SbE » • 43D 22 71 0 D 4 D S 7 2 7T1 B I H A S 2N6530,2N6531,2N6532, 2N6533 File Number 8 7 3 7 = 3 3 -2 ? 8-Ampere N-P-N Darlington Power Transistors 80,100,120 Volts, 60 Watts Gain of 1000 at 5 A 2N6530, 2N6532 Gain of 1000 at 3 A (2N6533)

2N6533

Abstract: 2n651 2n6532
Contextual Info: 2N6530, 2N6531, 2N6532, 2N6533 File Num ber 8-Ampere N-P-N Darlington Power Transistors 80, 100, 120 Volts, 60 Watts Gain of 1000 at 5 A 2N6530, 2N6532 Gain of 1000 at 3 A (2N6533) Gain of 500 a t3 A (2 N 6 5 3 1 ) Features: TERMINAL DESIGNATIONS Applications:

2N6533

Contextual Info: SavantIC Semiconductor Product Specification 2N6533 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·DARLINGTON ·High DC current gain APPLICATIONS ·Power switching ·Hammer drivers ·Series and shunt regulators ·Audio amplifiers PINNING

2N6533

Contextual Info: Product Specification www.jmnic.com 2N6533 Silicon Power Transistors DESCRIPTION ・DARLINGTON ・With TO-220 package APPLICATIONS ・Power switching ・Hammer drivers ・Series and shunt regulators ・Audio amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

NPN Transistor 10A 24V

Abstract: NPN Transistor TO220 VCEO 80V 100V POWER TRANSISTOR TO-220 2N6530 2N6533 NPN Transistor VCEO 80V 100V hfe 100 2N6532 2N6531 transistor 5k NPN Transistor TO220 VCEO 50v i 10A
Contextual Info: DATA SHEET 2N6530 2N6531 2N6532 2N6533 NPN POWER TRANSISTOR TO-220 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6530 Series are NPN silicon Darlington transistors designed for power applications requiring extremely high gain. MAXIMUM RATINGS: TC=25°C unless otherwise noted

n6532

Contextual Info: 3Ö750Ö1 DQ17HS3 0 | } .u arn n g io n P o w e r Transistors File Number 873 2N6530, 2N6531, 2N6532, 2N6533 8-Ampere N-P-N Darlington Power Transistors 80, 100, 120 Volts, 60 Watts Gain of 1000 at 5 A 2N 6530, 2N 6532 Gain of 1000 at 3 A (2N 6533) Gain of 500 at 3 A (2 N 6 5 3 1 )

rosemount 118mf

Abstract: OPTO MOS SWITCH OFM 2N5160 equivalent LT1001 KELVIN-VARLEY DIVIDER ultronix 105A 2n5160 OFM-1A 2N5160 ss LT301A
Contextual Info: LT1001 Precision Operational Amplifier DESCRIPTION U FEATURES • ■ ■ ■ ■ ■ ■ The LT 1001 significantly advances the state-of-theart of precision operational amplifiers. In the design, processing, and testing of the device, particular attention has been paid to the optimization of the entire

YSI 44007

Abstract: YSI 400 thermistor YSI 44018 Vernitron ceramic filters rosemount 118mf lm324 4mA to 20mA transmitter LT1013 LM358 output drive circuits phase reversal LT1013 anemometer lt1043
Contextual Info: LT1013/LT1014 Quad Precision Op Amp LT1014 Dual Precision Op Amp (LT1013) U DESCRIPTION FEATURES Single Supply Operation Input Voltage Range Extends to Ground Output Swings to Ground while Sinking Current Pin Compatible to 1458 and 324 with Precision Specs

Contextual Info: Ì 989963 CENTRAL SEMICONDUCTOR b i d e I oocm ns a _ 61C 00195'^ ^ « T POWER DARLINGTON TRANSISTORS EPOXY 6.0A 1C = TYPE NO . Ic VCEO Pd (Max) Tc=25°C Volts Watts VCE(S) @IC fT Min Amps Volts Amps Mh z hFE @IC Min - Max PNP Amps BDW23 BDW24 : 6.0 45 50

Contextual Info: LT1002 Dual, Matched Precision Operational Amplifier U FEATURES • ■ ■ ■ ■ ■ ■ DESCRIPTIO The LT 1002 dual, matched precision operational amplifiers combine excellent individual amplifier performance with tight matching and temperature tracking between

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

2N6530

Abstract: MJE700T
Contextual Info: Power Transistors TO-220 Case Continued TY P f NO, 1C m MW PNP PD m MAX BVépo BVCtO m VCE(SAT) @ 1C h re (A) m m m MB MAX (V) (A) fT (MHz) Iflffcl mnf MAX 2N6497 5.0 80 350 250 10 75 2.5 5.0 5.0 5.0 2N6498 5.0 80 400 300 10 75 2.5 5.0 5.0 5.0 2N6499 5.0

LT1013

Abstract: mc1458 cpi strain gauge amplifier lm324 rtd circuits with lt1014 rosemount TEMPERATURE SENSOR 118MF LT1013 anemometer YSI 400 thermistor rosemount 118mf how to use STRAIN GAUGE with lm358 YSI 44018
Contextual Info: LT1013/LT1014 Quad Precision Op Amp LT1014 Dual Precision Op Amp (LT1013) DESCRIPTIO U FEATURES Single Supply Operation Input Voltage Range Extends to Ground Output Swings to Ground while Sinking Current Pin Compatible to 1458 and 324 with Precision Specs

Contextual Info: Power Transistors TO-220 Case Continued TYPE NO. NPN PNP ic PD (A) (W) MAX BVCBO BVCEO @ lc hFE (V) (V) MIN MIN MIN MAX (A) VCE(SAT) @ IC (V) (A) MAX fT (MHz) MIN 2N6497 5.0 80 350 250 10 75 2.5 5.0 5.0 5.0 2N6498 5.0 80 400 300 10 75 2.5 5.0 5.0 5.0 2N6499

ultronix 105A

Abstract: LT1001 118MF LM129 LT1001AM LT1001C LT1002 74C9 Transistor 2N3866 2N3866 equivalent
Contextual Info: LT1001 Precision Operational Amplifier DESCRIPTION U FEATURES • ■ ■ ■ ■ ■ ■ The LT 1001 significantly advances the state-of-theart of precision operational amplifiers. In the design, processing, and testing of the device, particular attention has been paid to the optimization of the entire

ssp11n60s5

Abstract: SSP11n60 STW5N150 SVT6251 STI3005 ST4N150 STI-3007 A STP8N90 SVT6060 SVT300-5
Contextual Info: STI Type: SSP11N60S5 Notes: Breakdown Voltage: Continuous Current: RDS on Ohm: Trans Conductance Mhos: Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID: Case Style: Polarity:

tic 1260 scr texas

Abstract: TA7265 2N6874 ta7719 2N6058 RCA 40408 transistor 2N2405 bd643 BD647 equivalent 2N3228
Contextual Info: RCA Bipolar Power Devices Table of Contents This DATABOOK contains detailed technical information on the full line of more than 750 RCA bipolar power devices consisting of: power transistors, SURGECTORs, ultra-fast-recovery rectifiers, power hybrid circuits, SCRs, and triacs.

BDX53E

Abstract: BUB06 ST BDX53C BDW23 BDW23A BDW23B BDW23C BDW24 BDW24A BDW24B
Contextual Info: 1989963 b l de CEN TR A L I SEMICONDUCTOR oocm ns a 61C 00195'^ W~ POWER DARLINGTON TRANSISTORS EPOXY it H le = le NO. Ic VCEO Pd (Max) Tc=25°C Volts Watts VCE(S) @IC fT Min Amps Volts Amps Mhz hFE @IC Min - Max NPN PNP Amps BDW23 BDW24 : 6.0 45 50 750 - 20,000

MJE13009

Abstract: MJE-13009 D44C11 Data MJE700T BU406 bu406d BU407D mje13007 mje13009 equivalent MJE800T equivalent
Contextual Info: TO-220 Power Transistors TO-220 Case Continued TO-220FP Full Pak • Fully Isolated Standard TYPE NO. Optional IC PD BVCBO BVCEO (A) MAX (W) (V) MIN (V) MIN MIN MAX 2N6497 5.0 80 350 250 10 2N6498 5.0 80 400 300 10 2N6499 5.0 80 450 350 10 75 2.5 2N6530

pe-6197

Abstract: 74C04 op amp transistor current booster circuit MJE305 linear an18 12BH7A 1000v to 2000v vac inverter circuit 2n5160 SCR c106 PIN CONFIGURATION 2N3866
Contextual Info: Application Note 18 March 1986 Power Gain Stages for Monolithic Amplifiers Jim Williams Most monolithic amplifiers cannot supply more than a few hundred milliwatts of output power. Standard IC processing techniques set device supply levels at 36V, limiting available output swing. Additionally, supplying currents beyond

BUB06

Abstract: ST BDX53C BDW23 BDW23A BDW23B BDW23C BDW24 BDW24A BDW24B BDW24C
Contextual Info: Î989963 CENTRAL SEMI C O N D U C T OR bï de I TYPE 61C 00195'^ T-33-29 oocmns a T POWER DARLINGTON TRANSISTORS EPOXY 6.0A 1C = _ NO. Ic VCEO Pd (Max) Tc=25°C Volts Watts VCE(S) @IC fT Min Amps Volts Amps Mhz hFE @IC Min - Max PNP Amps BDW23 BDW24 : 6.0

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK