20100 Search Results

MBRF2090CT

Abstract: 20100CT MBRF20100CT MBRF2070CT MBRF2080CT 20100c
Contextual Info: LITE-ON SEMICONDUCTOR MBRF2070CT thru 20100CT REVERSE VOLTAGE - 70 to 100 Volts FORWARD CURRENT - 20 Amperes SCHOTTKY BARRIER RECTIFIERS ITO-220AB FEATURES DIM. D 9.00 E F 2.90 9.30 3.60 14.22 A 3 E 2 F J H L PIN 1 PIN 2 PIN 3 13.46 1.15 2.40 0.75 1.70 2.70

mbr20100ct liteon

Contextual Info: LITE-ON SEMICONDUCTOR MBR2070CT thru 20100CT REVERSE VOLTAGE - 70 to 100 Volts FORWARD CURRENT - 20 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AB FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency

Contextual Info: i - _ _ ß c i fc « U > M =9 D ti K E £ 45 88.5 H 7 fl 9 10 11 1? A ß C D È * * 7Ì E u F 3 index Scale 1:1 Material 20100217 13.07.2010 ECO no . Date EP -H K EP -H K Ed itor Oate Neue Zeichnung. New d ra w in g . Name Created 13.07.2010 EP-M K Checked

Contextual Info: LITE-ON SEMICONDUCTOR MBRF2070CT thru 20100CT REVERSE VOLTAGE - 70 to 100 Volts FORWARD CURRENT - 20 Amperes SCHOTTKY BARRIER RECTIFIERS ITO-220AB FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency

Contextual Info: DIGITRON SEMICONDUCTORS MBR2060CT-20100CT 20A SCHOTTKY RECTIFIERS MAXIMUM RATINGS Rating Symbol MBR Unit 2060CT 2070CT 2080CT 2090CT 20100CT 60 70 80 90 100 Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage VRRM VRWM VR Average rectified forward current Rated VR

20100CT

Abstract: MBRF2090CT 406 diode MBR20100CT MBR2090CT MBRF20100CT 914 High frequency schottky rectifier DIODE mbr20100ct-e3
Contextual Info: New Product MBR F,B 2090CT & MBR(F,B)20100CT Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier FEATURES TMBS • • • • • • ITO-220AB TO-220AB 2 MBR2090CT 20100CT 3 MBRF2090CT 20100CT 1 PIN 1 PIN 2 PIN 3 CASE

CIG10F2R2MNC

Abstract: inductor 2r2 CIG10FR47MNC
Contextual Info: Ver 201007 Multilayer Power Inductor CIG10F Series 1608/ EIA 0603 APPLICATION Mobile phones, DSC, DVC, PDA etc. for DC-DC Converter FEATURES RECOMMENDED LAND PATTERN The smallest multilayer power inductor (1.6mmx0.8mm) Much lower Profile than any other series (0.5mm max)

CIG22B

Abstract: CIG22B4R7MNE
Contextual Info: Ver. 201007 Multilayer Power Inductor CIG22B Series 2520/ EIA 1008 APPLICATION Mobile phones, DSC, DVC, PDA etc. for DC-DC Converter FEATURES RECOMMENDED LAND PATTERN Excellent efficiency (High Q) High Current Magnetically shielded structure Free of all RoHS-regulated substances

Contextual Info: Ver. 201007 Multilayer Power Inductor CIG21F Series 2012/ EIA 0805 APPLICATION Mobile phones, DSC, DVC, PDA etc. for DC-DC Converter FEATURES RECOMMENDED LAND PATTERN Much lower Profile than any other series (0.5mm max) Low DC resistance Magnetically shielded structure

schottky mbr 20100ct

Abstract: 20100CT
Contextual Info: New Product MBR F,B 2090CT & MBR(F,B)20100CT Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier FEATURES TMBS • • • • • • ITO-220AB TO-220AB 2 MBR2090CT 20100CT 3 MBRF2090CT 20100CT 1 PIN 1 PIN 2 PIN 3 CASE

20100ct

Abstract: mbrf20100ct mbrf 20100ct 20100c
Contextual Info: SEMICONDUCTOR 20100CT MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking or Ink Marking. 2. Marking 1 K MBRF 2 20100CT 016 No. Item Marking Description KEC K KEC CORP. Device Name Lot No. 2007. 7. 27 3 Revision No : 0 MBRF 20100CT

20100CT

Abstract: MBR2070CT-20100CT 2080CT
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors MBR2070CT-20100CT TO-220 SCHOTTKY BARRIER RECTIFIER 1. ANODE FEATURES • Schottky Barrier Chip · Guard Ring Die Construction for Transient Protection · Low Power Loss, High Efficiency

Contextual Info: pss Phys. Status Solidi RRL 4, No. 11, 335– 337 2010 / DOI 10.1002/pssr.201004340 Investigation of electron delay www.pss-rapid.com in the base on noise performance in InGaP heterojunction bipolar transistors A. Shimukovitch*, 1, P. Sakalas*, 1, 2, P. Zampardi3, M. Schroter2, 4, and A. Matulionis1

bc 558 equivalent

Contextual Info: SPECIFICATION FOR APPROVAL PAGE: 1 REF : 20100507-D PROD. NAME SHIELDED SMD POWER INDUCTOR ABC'S DWG NO. SU1038□□□□F□-□□□ ABC'S ITEM NO. Ⅰ﹒CONFIGURATION & DIMENSIONS： A m/m m/m ±0.3 typ. typ. typ. m/m m/m m/m m/m G : H : 4.0 ref. 7.2 ref.

CM4532-L

Abstract: CM4532-221-kl CM4532221KL CM4532-102KL CM4532101 eme 1100 eme 1200 cm45324 CM4532100KL CM4532R33ML
Contextual Info: SPECIFICATION FOR APPROVAL 20100129-G REF : 20070124-C PROD. PAGE: 1 WOUND CHIP INDUCTOR NAME ABC'S DWG NO. CM4532□□□□L□-□□□ ABC'S ITEM NO. Ⅰ﹒CONFIGURATION & DIMENSIONS： 330K Marking Inductance code 4.2±0.2 A : 4.5±0.3 m/m B : 3.2±0.2

20100CT

Abstract: mbrf 20100ct
Contextual Info: New Product MBR F,B 2090CT & MBR(F,B)20100CT Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Lower power losses, high efficiency • Low forward voltage drop

Contextual Info: 1 19 9 1 MEMORY 20100L S-MOS T E M S A Seiko Epson Affiliate November, 1990 #S004 CMOS 1M-BIT STATIC RAM PIN CONFIGURATION DESCRIPTION The SRM 20100I_7 o/85/io is a 131 ,07 2 words x 8-bit asynchronous static, random access memory device on a monolithic CMOS chip. Its very low standby power

RB0608

Abstract: MW75 1030 polyurethane MW26
Contextual Info: SPECIFICATION FOR APPROVAL REF : 20100118-A PROD. PAGE: 1 RB0608□□□□L□-□□□ ABC'S DWG NO. RADIAL INDUCTOR NAME ABC'S ITEM NO. Ⅰ﹒CONFIGURATION & DIMENSIONS： Marking : " " : Start 101-100 uH Inductance code B F 101 Aψ E Wψ C Aψ

RB0914101K

Abstract: RB0914101
Contextual Info: SPECIFICATION FOR APPROVAL PAGE: 1 REF : 20100211-A PROD. RB0914□□□□L□-□□□ ABC'S DWG NO. RADIAL INDUCTOR NAME ABC'S ITEM NO. Ⅰ﹒CONFIGURATION & DIMENSIONS： Marking : " " : Start 101-100 uH Inductance code Aψ B : 8.7±0.5 m/m B

MW79

Contextual Info: SPECIFICATION FOR APPROVAL REF : 20100202-B PAGE: 1 PROD. RB0712□□□□L□-□□□ ABC'S DWG NO. RADIAL INDUCTOR NAME ABC'S ITEM NO. Ⅰ﹒CONFIGURATION & DIMENSIONS： Matking : " " : Start 101-100 uH Inductance code C B 6.7±0.5 m/m B : 10.0±1.0

jung shing wire material safety

Abstract: jung shing wire marking ANs Marking Code ABC E174837 MW35C MW79-C MW35-C
Contextual Info: SPECIFICATION FOR APPROVAL REF : 20100118-A PAGE: 1 PROD. ABC'S DWG NO. POWER INDUCTOR NAME PV1823□□□□L□-□□□ ABC'S ITEM NO. Ⅰ﹒CONFIGURATION & DIMENSIONS： C E B F A : 18.0 max. B : 23.0 max. C : 15.0±5.0 E : 3.0 max. m/m m/m m/m m/m Wψ

mw80c

Abstract: MW75C MW79-C MW35C Marking Code ABC polyurethane MW75-C MW35-C E174837
Contextual Info: SPECIFICATION FOR APPROVAL REF : 20100118-A PAGE: 1 PROD. ABC'S DWG NO. POWER INDUCTOR NAME PA1020□□□□L□-□□□ ABC'S ITEM NO. Ⅰ﹒CONFIGURATION & DIMENSIONS： Wψ Aψ C B' B A : B : B' : C : E : Wψ: E m/m m/m m/m m/m m/m m/m 10.0 max. 15.0 ± 1.0

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors MBR2070CT-20100CT TO-220 SCHOTTKY BARRIER RECTIFIER 1. ANODE FEATURES • Schottky Barrier Chip · Guard Ring Die Construction for Transient Protection · Low Power Loss, High Efficiency

AVR1500: Xplain training - XMEGA Basics

Abstract: Application Notes atmega 8 c coding ATMEGA USART programming example AVR1500 XMEGA Application Notes Atmel ATmega 16 LED project using avr atmel atmega 8 c coding XMEGA Application Notes usb
Contextual Info: AVR1500: Xplain training - XMEGA Basics Prerequisites • Required knowledge - Basic knowledge of microcontrollers and the C programming language • Software prerequisites - Atmel AVR® Studio® 4.18 or later - WinAVR/GCC 20100110 or later • Hardware prerequisites