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    IXXN110N65C Search Results

    IXXN110N65C Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXXN110N65C4H1
    		IXYS IGBTs - Modules, Discrete Semiconductor Products, IGBT 650V 210A 750W SOT227B Original PDF 7
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    IXXN110N65C Price and Stock

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    IXYS Corporation IXXN110N65C4H1

    IGBT MOD 650V 210A 750W SOT-227B
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    DigiKey IXXN110N65C4H1 Tube 226 1
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    IBS Electronics IXXN110N65C4H1 300
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    Littelfuse Inc IXXN110N65C4H1

    Transistor, Igbt, 650V, 210A, Sot-227B; Continuous Collector Current:210A; Collector Emitter Saturation Voltage:2.06V; Power Dissipation:750W; Operating Temperature Max:175°C; Igbt Termination:Tab; Collector Emitter Voltage Max:650V Rohs Compliant: Yes |Littelfuse IXXN110N65C4H1
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    Newark IXXN110N65C4H1 Bulk 119 1
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    IXXN110N65C Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: XPTTM 650V GenX4TM w/ Sonic Diode IXXN110N65C4H1 Extreme Light Punch Through IGBT for 20-60kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 650V 110A 2.35V 30ns E SOT-227B, miniBLOC E153432 Ec Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		IXXN110N65C4H1 20-60kHz IC110 OT-227B, E153432 IF110 110N65C4 1-30-13-A PDF

    IXXN110N65C4H1

    Abstract: E8 55A DIODE ixxn110n65c z 683
    Contextual Info: Advance Technical Information XPTTM 650V GenX4TM w/ Sonic Diode IXXN110N65C4H1 Extreme Light Punch Through IGBT for 20-60kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 650V 110A 2.35V 30ns E SOT-227B, miniBLOC E153432 Ec Symbol Test Conditions Maximum Ratings


    Original     		20-60kHz IXXN110N65C4H1 IC110 OT-227B, E153432 IF110 50/60Hz 100N65C4H1 IXXN110N65C4H1 E8 55A DIODE ixxn110n65c z 683 PDF