2N213 Search Results

Contextual Info: 2N2135 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300º V(BR)CBO (V)300 I(C) Max. (A)25 Absolute Max. Power Diss. (W)250 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)30m¥÷ @V(CBO) (V) (Test Condition)300 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)25

2n113

Abstract: 2N2146 N1137 2N1136B Germanium power 2N351A 2N2140A 2N1537 2N637 2N376A
Contextual Info: germanium power transistors 145 PNP ALLOY TRANSISTORS .5 Amp BREAKDOWN VOLTAGES CUTOFF CURRENT hFE TYPE NUMBER Vel VeE VEl VeE Ie (A) Min. Max. Vel rnA 2N2138A 2N2139 2N2139A 2N2140 2N2140A 2N2141 2N2141A 2N2142 2N2142A 2N2143 2N2143A 2N2144 2N2144A 45 45A

westinghouse semiconductor

Abstract: Westinghouse 2N2109 WESTINGHOUSE ELECTRIC westinghouse 2n1826 2N213 2N1816 2N2109 2n1831 WESTINGHOUSE ELECTRIC fuse
Contextual Info: - / - ._ 2191809, ZN1816, 2M1823 2N1830, 2N2109, 2N2116 2N2123, 2N2130 silicon power tran sistors fo r sw itch in g, re g u la to r a n d a m p lifie r ap p lic atio n s 30 am p e re s • 250 w a tts co lle c to r-to -e m itte r v o ltag e 50 to 300 v o lts

SKC25B70

Abstract: PT9847 TIP350 B0249 ESM752A ESM952A TlP35C esm952 PT9785 2n6686 to218
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 20 25 30 35 40 (A) ESM952 ESM752A ESM952A BOY57A BOY57A BOY58R BOY58R PT9847 2SG3240 PT9785 C04262 SSP70 TIP35 1763-0420 1768-0420 SOT79821 SOT79821 B0249 2N1830 2N2130 SSP70A TIP35A B0249A 2N5885 SOT79822

2n2137

Contextual Info: , Una. <£tmL-donctwsto 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: 973 376-2922 (212) 227-6008 FAX: (973) 3764980 2N2137 (GERMANIUM) PNP germanium industrial power transistors for driver applications in high reliability equipment. MAXIMUM RATINGS

TI494

Abstract: THP47 TF80 siemens TE3904 TI381 TIP-24 TF260 TI389 TI-494 TH415
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 20 25 30 35 40 (A) ESM952 ESM752A ESM952A BOY57A BOY57A BOY58R BOY58R PT9847 2SG3240 PT9785 C04262 SSP70 TIP35 1763-0420 1768-0420 SOT79821 SOT79821 B0249 2N1830 2N2130 SSP70A TIP35A B0249A 2N5885 SOT79822

2N2764

Abstract: 2N2119 2N2126 16420 2N6062 2N4211 2N2823 2N2763 16-430 2N2117
Contextual Info: BIG IDEAS IN BIG POWER • PowerTech Replacement Parts Are Available For The Following Part Numbers: PART # 2N1936 2N1937 2N2109 2N2110 2N2111 2N2112 2N2113 2N2114 2N2116 2N2117 2N2118 2N2119 2N2123 2N2124 2N2125 2N2126 2N2130 2N2131 2N2132 2N2133 2N2757 2N2758

2N2090

Abstract: 2N2095A 2N2022 2N2040 Emihus 2N2020 2n2063 2n2038 2N2082 2N2003
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 >= 30 Solitron PPC Product PPC Product Solitron Solitron PPC Product Sid St Dvcs Sid St Dvcs Sid St Dvcs Sid St Dvcs g~:~:g~ ~:~~: ~~: KSP1151 KSP1171 SOT7A07 SOT7A07 SOT7A07 SOT7607 SOT7607 SOn607

RT3062

Abstract: BLY98 2SC931 1768-0815 2SC1002 2SC1003 2SC807 2SC830 ta6200 2SC685
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

2n261 rca

Abstract: 2N301G 2n257 2n185 2n222 motorola diode s2m 2N277 2N244 2N243 2N332A
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2501199 2501424 2N997 2SC982TM MMBT100 MMBT200 MMBT3642 MPSS545 MPSS545 MPSS545 BCWSSRH BCWS8RG BC817 BC817 BC1S7B 2N472 2N472A 2N2247 2N2247 2N2247 ~~i~~9 25 30 2N2038 2N332A 2N757 2N758 MPSS544 2N475

2N5576

Abstract: MT111 2N1828 MP1537 BUY28 B170026 2n1821 2N2535 2n2585 MP1552A
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D S Y M B O L S & C O D E S COM MON TO M O R E T H A N O N E T E C H N I C A L S E C T IO N LIN E No. T Y P E No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . t Switching type, also listed in Section 12

OC26 transistor

Abstract: 2N301 OC30 OC26 2n2430 OC36 transistor 2N1010 OC25 germanium transistors NPN t01 transistor
Contextual Info: 0DQD14E S I T 3 3 -0 e! DIODE TRANSISTOR CQ.1 \IC. GERMANIUM NPN LOW POWER TRANSISTORS DEVICES PKG (201 686-0400 • Tb Ioxl 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4561 hAA FAX NO. No. 2U1-S7!>-58e3 201*575*5863 _ 2N35 2N78 2N94 2N97 2N98

MP2143

Abstract: AD162 2S8474 ad139 2N352 2N353 2N669 2N554 2N2282 2n555
Contextual Info: POWER GERMANIUM PNP Item Number Part Number I C 5 10 >= NKT302A 2S8463 2S8474 PTC194 2N352 2N352 2N353 2N353 2N296 SK3052 ~~~~~A 15 20 2N256 NKT453 2N555 2N157 2N157A CK315 CK415 MN28 ~~f:16 25 30 NKT452 2N554 NKT415 NKT451 2N589 2N2061 2N2062 2N2063 ~~~~64

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

2N2753

Abstract: S1482 JAN2N1480 jantx 2N2771 2N2034 jan2n1482 2N2580M 2n2110
Contextual Info: IN D EX Type No. 2N389 2N389A 2N424 2N424A 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B 2N1016C 2M 016D 2N1016E 2N1016F 2N1047 2N1047A 2N1047B 2N1048 2N1048A 2N1048B 2N1049 2N1049A 2N1049B 2N1050 2N1050A 2N1050B 2N1067 2N1068

2N2109

Abstract: 2N2110 2N2111 2N2112 2N2113 2N2114 2N2116 2N2117 2N2118 2N2119
Contextual Info: POWER TRANSISTORS TYPE NO. TO-114 PT MAXIMUM RATINGS @ » V ra g g i n ra s i r m « M V V A Watts V <2 tlF E MIN MAX le A Vce V Test Sat Voltages Conditions Ib Imo* V a V be le V V A A ma 2N2109 250 50 50 15 30 10 10 4 1.5 Ì.5 10 T ~ 2N2110 250 100 100 15

2N2063A

Abstract: 2N2082 Emihus 2n2007 esr bc63 2N2019 2N2097A 2n2114 2n2079 2n2102 motorola
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 BC141-S BFW24 BC637 BFS61 2N489S BFX34 C266 C26S 2N1890 2N871 ~~rt:~OS 1S 20 BC44S BC44S-18 BC44S-S 2SC69 MPS-AOS MPS-AOS MPS-AOS PMBTASS ~~:0~~55 -2S 30 2N2060A 2N2060B 2N2SS2 2N2SS2A 2N2980 2N2980 2N2980 BFX99

2N555

Abstract: Germanium power 2N554 2N176 2N553 2N242 2N257 DRAWING 2N257 2N307 2N250
Contextual Info: germanium power transistors _ T03/ See Pg. 147 for outline d 144 -~-~~-~~- -~ PNP ALLOY TRANSISTORS .42Amp BREAKDOWN VOLTAGES TYPE NUMBER VCB 2N234A 2N235B 2N255A 2N256A 2N257 2N285A 2N285B 2N399 2N401 2N419 2N554 -25 -50 -15 -30 -40

2N1423

Abstract: 2N5577 2N5579 MD38 1401-0207 MT1836 2SD223
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. t * - k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C I I MIN. M A X Pc T 6 T T

2n189

Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
Contextual Info: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits

AD132

Abstract: 2N400 2N2140A ad131 MP2144 germanium AD140
Contextual Info: POWER GERMANIUM PNP Item Number Part Number I C 5 10 15 20 >= 2N257G 2N2578 2N1759 NKT450 2N2358 2N2368 2N2553 2N2557 AUY33 2N11838 2N1038 TI367 TI367 TI367A TI367A 2N3159 AD140 AD140 AD140 AD153 ~~~~~ 25 30 2N1359 2N235A 2N399 2N401 2N1184B 2N400 2N236 2N236A

2N7805

Abstract: gw 340 diode t03 package transistor pin configuration 32N03 DTG2400 DTG-2400 2N2144A 2N1100 2N126 2n228 transistor
Contextual Info: CY7C1339 128K x 32 Synchronous-Pipelined Cache RAM Features The CY7C1339 I/O pins can operate at either the 2.5V or the 3.3V level; the I/O pins are 3.3V tolerant when V DDq=2.5V. * Supports 100-MHz bus fo r Pentium and PowerPC operations w ith zero w ait states

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books