2SD223 Search Results

Contextual Info: Transistors IC SMD Type Product specification 2SD2230 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 Low VCE sat . 1 0.55 High hFE and high current. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01

Contextual Info: 2SD2234 % ± ' ì n - \ :7 > ì > % 9 N P I\ l = f i J £ 8f c ^ U — t M TR IP LE D IF F U S E D PLANER TYP E HIGH SPEED SWITCHING I Features • S H JE . High voltage, high speed switching • S ft ff iti High reliability •ffliH : Applications — $ •

2SD2232

Abstract: 2sb1492 2SD2255 2SD2230 2SD2233 2SD2234 2SD2240 2SD2242 2SD2242A 2SD2247
Contextual Info: - 286 - W c k & fè » rl ^ f± -in S m iê V'CBO V 2SD223Q 2SD2232 2SD2233 2SD2234 2SD2240 2SD2242 2SD2242A 2SD2247 2SD2249 2SD2250 2SD2252 2SD2254 2SD2255 2SD2256 2SD2258 2SD2259 2SD2260 2SD2263 2SD2265 2SD2266 2SD2273 2SD2274 2SD2275 2SD2276 2SD2280 2SD2281

2SB1478

Abstract: 2SD2237
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 2000 Min @ IC= -2A ·Low Collector Saturation Voltage: VCE(sat) = -2.0V(Max.) @IC= 5A ·Complement to Type 2SD2237 APPLICATIONS

2SD2234

Abstract: FUJI POWER TRANSISTOR SC-65 fuji relay 700 v power transistor fuji power
Contextual Info: 2SD2234 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH SPEED SWITCHING ＮＰＮ三重拡散プレーナ形 高速スイッチング用 外形寸法 : Outline Drawings 外形寸法: 特長 ：Features 特長： 高耐圧 高速 ｽｲｯﾁﾝｸﾞ

NEC semiconductor

Abstract: NEC MARKING surface diode ir30 2ds223
Contextual Info: '$7$ 6+ 7 6,/,&21 75$16,6725 6' 131 6,/,&21 (3,7$;,$/ 75$16,6725 25 /2:)5(48(1&< 32:(5 $03/,),(56 PACKAGE DRAWING (UNIT: mm) The 2SD2230 is an element realizing ultra low VCE(sat). This transistor is ideal for muting such as stereo recorders, VCRs,

2SB1478

Abstract: 2SD2237
Contextual Info: SavantIC Semiconductor Product Specification 2SB1478 Silicon PNP Power Transistors DESCRIPTION •With TO-247 package ·Complement to type 2SD2237 ·High DC current gain ·DARLINGTON APPLICATIONS ·For use in power linear and switching applications PINNING

2SD2234

Abstract: 30S3 T151 T930 T3900 TSVB
Contextual Info: 2SD2234 TRIPLE DIFFUSED PLANER TYPE i-fó HIGHSPEED SWITCHING : Outline Drawings as£ F e a tu re s '• • High voltage, high speed switching • fifffS ti High reliability : A p p lic a t io n s I'X o - l''- ? • ^2.7 Sw itching regulators W M l 'z • D C - D C 3 > '< —9

2SB1477

Abstract: 2SD2236
Contextual Info: SavantIC Semiconductor Product Specification 2SB1477 Silicon PNP Power Transistors DESCRIPTION •With TO-247 package ·Complement to type 2SD2236 ·Wide area of safe operation APPLICATIONS ·For drvier and general purpose applications PINNING PIN DESCRIPTION

marking D46

Abstract: 2SD2230
Contextual Info: Transistors IC SMD Type NPN Silicon Epitaxia 2SD2230 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 Low VCE sat . 1 0.55 High hFE and high current. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01

Contextual Info: SANKEN E L E C T R I C CO LTD SSE ]> 7^0741 ÜÜOCnMO Sbb H S A K J Silicon PNP Epitaxial Planar ☆ Darlington 2SB1476 * Complement to type 2SD2231 Application Example: Audio and General Purpose 'Outline Drawing 2 " " M T-100 T03P Electrical Characteristics

2SD2231

Contextual Info: SANKEN ELECTRIC CO LTP SSE D • 7^0741 □□□IDSb TMS ■ S A K J Silicon NPN Triple Diffused Planar ☆ D a rlin g to n 2SD2231 ☆ C o m p le m e n t to ty p e Application Example : 2SB1476 • Outline Drawing 2 WIT-1 0 0 IT 0 3 P A u d io and General P urpose

LA 7873

Abstract: TC787 tf 044 2SD2230 G262G M098 LLAM
Contextual Info: Silicon Transistor 2SD2230 2SD2230 Ü, L t M ' É f f lt L T j i a «F ft LfzMT T t . VcE sat L t, X r w i , W f i - f - f > 7 B 0 ( T O : mm) 2 .8 ± 0 .2 o .65i?:i 1.5 T ' t c o f f i VcE(sat) -C'tO VcE(sat)i = 33 mV TYP. Ic = 100 mA, IB= 10mA VcE(sat)2 = 1 5 0 mV T Y P .

2SB1477

Abstract: 2SD2236
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1477 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -100V(Min.) ·Wide Area of Safe Operation ·Complement to Type 2SD2236 APPLICATIONS ·Designed for driver and general purpose applications.

nec 2sc3157

Abstract: 2SD999 2SD1296 2SD1317 2SD1406 2sc3694 2SC3760 2SD2061 2sd2239 nec 1678
Contextual Info: - 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SO 2SD 2SD 1669 y 1673 1676 — ' 1677 1678 1680 1682 ^ 1683 " 1684 •* 1685 1686 □ — A = * = = n n M. 2 TOSHIBA B m NEC ±L HITACHI 2SD1622 2SC2883 2SD1406 2SC3299 2SD1412 2SD1435K 2SD136S 2SD1662 fó T -E m 2SC3419

DTS108

Abstract: L30C DTS103 DTS106 2SC5250 2sd222 UP 130 L10B
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

2SD157

Abstract: 2SD2238 2SC3692 2SD1833 2SD1277 2SD1577 2sd1590 2SC1847 2SC3258 2SD2239
Contextual Info: - 2 40 - tt m % Type No. 2SD 1410 / M 2SD 1411 M ¥ 2SD 1412 2SD 1413*— 2SD 1414 ^ 2SD 1415 ^ Manuf. 2SD 1420 2SD 1421 2SD 1423A 2SD 1424 s m NEC S ±L HITACHI 2SD1141 K H dr ìli FU JITSU fâ T MATSUSHITA 2SD1833 2SC3692 2SD1271 2SD1833 2SC3144 2SD1589

2N1103

Abstract: 2SC167 2SC166 CK26A CI44 BC412 KIS434 NS435 NS436 NS438
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

transistor b1154

Abstract: B1154 10PE1 2N2962 2N1103 ASY13-2 GET116 2SC5220 AFY11 ASY12
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2N5036

Abstract: A1381 transistor 2N5034 2N5035 156-043 2SD323 2N5034 package B170000 B170001 S8002
Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GE RMANIUM P N P 1 9 G ER M AN IU M N P N 1 10. SILICON PN P 1 1 . SILICON NPN LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

2SC3181

Abstract: 2SD1526 1286-Z 2SD2239 2SC2060 2Sd1448 2SD400 2SD798 2SD822 2SD1114
Contextual Info: 236 - a Si £ Type No. « » « fe' T T fci T 2SD 12 7 5A 2SD 1 27 6 2SD 12 7 6A 2SD 1 27 7 2SD 12 7 7A 2SD 1278 2SD 1 28 0 2SD 1 2 81 2SD 1 2 82 2SD 1 2 83 2SD 1284 2SD 128 5 > 2S D 1286 TOSHIBA 1 NEC 31 HITACHI § t FUJITSU I ta t MATSUSHITA = m MITSUBISHI

2N1103

Abstract: CK26A 2SA474 2SA475 2N1524 OC303 OC309-1 OC309-2 OC304 A1383 transistor
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2SD1570

Abstract: 2SD1488 2SD412 2SD411 1116 1141A 2SC3293 2sd1033 2sd1193 2sd1323
Contextual Info: - 234 - m % Type No. tt 2 SD 1 2 1 2 * - H 2 SD 1 213 ^ = 2 SD 1 2 1 4 ^ fé fé fé fé 2 SD 1215 2 SD 1216 2 SD 1 217 ~« n 1 91 «- * 2 SD 1 21 9 ^ 2 SD 1 22 0 n T m T 2SD1393 T 7SD139S fé T - m *£ j£ 2 SD 1 22 3 y m ^ M 2 SD 1 22 5 / □ - A 2 SD 1 2 26

2N1103

Abstract: A608 transistor pnp 2SC631 2SC632 2N3604 FV918 2SC167 2SC166 2N2161 2N1082
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,