T3900 Search Results

SFU455A

Abstract: mitsumi modulator LA8630M 2SA608G mitsumi modulator VCR TIC29 A608g mitsumi modulator enc-87941 yd1002 CFU455E2
Contextual Info: Ordering number : EN 3781B Monolithic Linear 1C LA8606M No. 3781B Cordless Telephone Signal Processor OVERVIEW The LA8606M is a signal processor IC for use in cordless telephone. It incorporates 1st and 2nd IF mixers, IF amplifier, quadrature detector, noise detector and noise amplifier on-chip, greatly

RTL8211E

Abstract: ISL6258A 88E1116R Marvell 88E1116R ISL6258 RTL8211 L6703 u9701 MCP79-B01 Q7055
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,MBP 15"MLB ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ?

ISL9504

Abstract: b6886 PP3V42G3H NVIDIA G84m ISL9504BCRZ C8050 12v p66 apple k50 apple M75 MLB 820-2101 PP3V42
Contextual Info: 8 6 7 2 3 4 5 CK APPD OROYA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ? 03/20/2007 - DVT

t3901

Contextual Info: *T03 CASE RECTIFIERS DUAL AND SINGLE CHIP l0 RATINGS TO 30.0 AMPERES (HIGH SPEED) FEATURES: • Hermetic Seal • High Temperature Operation • Metallurgical^ Bonded DESCRIPTION This is a series of general purpose medium current rec­ tifiers with average forward current ratings of up to 30

T3910

Contextual Info: *T03 CASE RECTIFIERS DUAL AND SINGLE CHIP l0 RATINGS TO 30.0 AMPERES (HIGH SPEED) FEATURES: DESCRIPTION • Hermetic Seal • High Temperature Operation • Metallurgical^ Bonded This is a series of general purpose medium current rec­ tifiers with average forward current ratings of up to 30

BD373

Abstract: 2n 2222A 3904 NSDU55 National Semiconductor Discrete devices catalog ITT+Semiconductors+saj+300+t BC560 NSDU05
Contextual Info: v CE0 iMt (V e its ) M in too D e vice s KPN 2N 6730 * M « •M M M c (M H t) : .; mA 5 — PD (Amb) (m W ) 925°C 1000 80 250 50 75 100 T 0 -2 0 2 (5 5 ) 1333 1000 50 250 250 50 200 T O -237(91) 850 250 50 200 T 0 -2 0 2 (5 5 ) 2000 150 100 50 TO -39 800

t160 crystal 16 mhz

Abstract: t3600
Contextual Info: Miniature V S I A N D A N c L I G TOROIDAL INDUCTORS 81728, semi-bright. Housing material is Vectra , a liquid crystal polymer plastic meeting the requirements of MlL-M-24519C. Vectra® can be used continuously at 254”C 489"F , has a melt point of 280°C

varo diode

Abstract: 1n1157 1N1158 1N1160 1S1288 1N1159 BYY16 RM10TB MR2001 FC225S
Contextual Info: SILICON RECTIFIERS, UNDER 1 kV Item Number Part Number Manufacturer 1 Max VRRM 'FSM Max A 00 (A) (V) VF IF @ IR Test (A) 25 °C @ (A) VR IR Test 00 T T2 @ Test (A) (°C) Op«r Package Style Max (°C) General-Purpose, lo >= 10 A . . . .5 . . .10 . . .15

d7810

Abstract: L9141 MXM pinout U4900 J9002 K40 fet MARK G4 SOT363 Apple j9002 k50 apple ISL6269
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. M78-DVT REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 33 503047 ENGINEERING RELEASED

MCP79MXT-B3

Abstract: ISL6258A ti c3931 u9701 rtl8211* Reference design L6703 C3931 88E1116R FW643E CS4206A
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,CORNHOLE,K19 ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE

RTS5158

Abstract: it8511te Q2406B max8776 BC8013 Q8802 T8046 R3430 st d1703 l C8213
Contextual Info: A B C D E F9E SCHEMATIC Revision 2.02 1 1 Content PAGE PAGE SYSTEM PAGE REF. 2 3 4 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 CPU-MEROM 1 CPU-MEROM(2) CPU CAP, Thermal Senor

ISL9504

Abstract: j4310 BD9828 ISL9504B NVIDIA G84m RN5VD30A-F SLG2AP101 Q7080 88E8058 PP3V42G3H
Contextual Info: 8 6 7 04/02/2007 Contents D Page TABLE_TABLEOFCONTENTS_HEAD TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM

ISL9504

Abstract: ISL9504B M75 MLB 820-2101 PP3V42G3H C8550 c7381 N8242 c5855 ISL9504 U7500 c3334 schematic diagram
Contextual Info: 8 6 7 2 3 4 5 CK APPD OROYA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ? 03/20/2007 - DVT

m61266

Abstract: M61262 m61260 r2j101 R2s*15102np r2j10160 ha118225f M61266FP r2j10160-xxxfp R2S15102NP
Contextual Info: 2005.10 Everywhere you imagine. _ ICs for video signals j i / Z t t Z r f s n y w w w .re n e sa s.co m • - « i * U -'^ 3 ^ t? |gr 0 W & à i T 3 Pursuing high quality with one-chip solutions R enesas ICs for video signals. c R T *» è *f« a o f '^ '/ U

HMT-22

Abstract: HMT-1600 HMT-1200 HMT-11 MIL-C-15305 HMT330 HMT-130 INDUCTOR 100 uh DIP Mil-std HMT-1100 HMT-200
Contextual Info: JZ^O 'zts S iC fio T L & tte r TOROIDAL INDUCTORS _ J # Fully encapsulated design # High Q 24519C. Vectra can be used continuously at 254 °C 489°F , has a melt point of 280°C (538°F), is inherently flame retardant and meets the flammability requirements of UL 94V-0.

z63n

Abstract: t28000 z65n 07in M6008 mitsubishi lable fr1s MITSUBISHI GATE ARRAY z66n R12W
Contextual Info: A m itsu b ish i ELECTRO N IC DEVICE GROUP P R E LIM IN A R Y M6008X 0.8 Jim CMOS GATE ARRAYS Mitsubishi M6008X Series 0.8 Jim CMOS Gate Arrays INTRODUCTION Mitsubishi offers sub-m icron CMOS Gate Arrays us­ ing a 0.8 micron drawn twin well silicon gate process

m60013

Abstract: M60016 m60011 M60014 z46n M60030 M60024 Z24N M60012 m60043
Contextual Info: A m its u b is h i CMOS GATE ARRAYS ELECTRONIC DEVICE GROUP Mitsubishi CMOS Gate Arrays INTRODUCTION Mitsubishi offers three fami­ lies of CMOS gate arrays: 1.0 /im, 1.3 /j.m, and 2.0 ji.m, with usable gates ranging from 200 to 35,000. The 1.0 and 1.3 p.m devices are

r4363

Abstract: L9141 NTC 16D-7 MXM pinout C4253 PP2102 d7810 imac MLB ntc 10d-7 PP1013
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. M72-DVT REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 34 503014 ENGINEERING RELEASED

Contextual Info: HIGH PERFO RM ANCE C M O S M ICRO CYCLE LENGTH CO NTRO LLER MIC R O SLIC E p r e l im in a r y ir!? T42C2* IDT49C25A P R O D UC T FEATURES: DESCRIPTION: • S im ila r fu n ctio n to A M D ’s A m 2925 b ip o la r co n tro lle r w ith im pro ve d sp e e d s and o u tp u t d rive over fu ll te m p e ra ture and

cm8562gi

Abstract: SK C4020 rts51 asus ICS954310 C2929 rts5117 c2233 f3ja PC5702
Contextual Info: A B C D E F9J SCHEMATIC Revision 2.0 1 1 Content PAGE PAGE SYSTEM PAGE REF. 2 3 4 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 YONAH CPU 1 YONAH CPU (2) FAN CTRL&Thernal protection

PP3V42G3H

Abstract: apple J8000 ISL9504 NVIDIA G84m C4740 p66 apple C8050 apple computer ad30 ok 1500 3p3 C7103
Contextual Info: 8 6 7 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 2 3 4 5 1 CK APPD SCHEM,MLB,MBP15 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ? 04/24/2007

Asus

Abstract: sk c4300 C4043 ICS954310 rts5117 d1804 SK C4020 d2504 C1904 T3900
Contextual Info: A B C D E F9J SCHEMATIC Revision 2.0 1 1 Content PAGE PAGE SYSTEM PAGE REF. 2 3 4 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 YONAH CPU 1 YONAH CPU (2) FAN CTRL&Thernal protection

ISL9504

Abstract: pg65d U8550 SH0925 DP431 U8500 j4310 vishay CK 67A PP3V42G3H 338S0432
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,MBP 15" MLB ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ?

T20A6

Abstract: T3900 T-3900 T3891 Altra EP1810L1-35 T20A6F T12A6F SR710 SR710F T3889
Contextual Info: SEMICON COMPONE NTS INC 2flE D • 8135157 000Qfl3^ b ■ ' T -C/& - } °| *T03 CASE RECTIFIERS DUAL AND SINGLE CHIP l0 RATINGS TO 30.0 AMPERES (HIGH SPEED) FEATURES: DESCRIPTION • Hermetic Seal • High Temperature Operation • Metallurgical^ Bonded