varo diode
Abstract: 1n1157 1N1158 1N1160 1S1288 1N1159 BYY16 RM10TB MR2001 FC225S
Contextual Info: SILICON RECTIFIERS, UNDER 1 kV Item Number Part Number Manufacturer 1 Max VRRM 'FSM Max A 00 (A) (V) VF IF @ IR Test (A) 25 °C @ (A) VR IR Test 00 T T2 @ Test (A) (°C) Op«r Package Style Max (°C) General-Purpose, lo >= 10 A . . . .5 . . .10 . . .15
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ncr20-6001n33721n3373vhe2401+12sscda05he1n33741n1157varo diode1n11581n11601s12881n1159byy16rm10tbmr2001fc225s
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FD6666 diode
Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5
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a4/10a5/62a5/105a1000+16aa100aa110aa111aa112aa113aa114fd6666 diodediode by1001n4q07ba100 diodeby164bb139bay38diode aa1191s184 diode1n82
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IN3492
Abstract: sg 4001 diode 1NA4 md914 35C10 1N20b 1n67a 0a202 diode iN3495 1469r
Contextual Info: NIAX VAX U E S 0 2 5 ° D IO D E Vw PRV If Vf IR T Y P E u S E 0A5 100 .3 5 1 .3 30 G GP 0 A6 60 .3 5 1 .3 9 .0 G GP 0A7 30 .2 5 1 .7 6 .0 G SW O A IO 30 1 .0 .9 5 600 G SW OA3I 85 12 0 .7 40 G GP 0A47 30 .1 5 .6 5 10 G 0A70 2 2 .5 . 15 .2 5 30 G RF OA71 90
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3e120450e120r450f05450f05r+16450f10450f10r450f20450f20r450f30450f30rin3492sg 4001 diode1na4md91435c101n20b1n67a0a202 diodein34951469r
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BA100 diode
Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any
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a4/10a5/62a5/105a1000+16aa100aa110aa111aa112aa113aa114ba100 diodeba102aay20b2m1-51n2528ph1021oa210 diodediode aa116bb105gaz17
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